F. Genty

85% internal quantum efficiency of 280-nm AlGaN multiple quantum wells by defect engineering

Thermometry at the nanoscale

Interband optical properties of molecular-beam epitaxially grown GaAs1−xSbx on GaAs substrates

Roadmap on ultrafast optics

Spintronics: Fundamentals and applications

The emergence and prospects of deep-ultraviolet light-emitting diode technologies

Subpicosecond spin relaxation in GaAsSb multiple quantum wells

Band parameters for III–V compound semiconductors and their alloys

Thermography techniques for integrated circuits and semiconductor devices

Band gaps and band offsets in strained GaAs1−ySby on InP grown by metalorganic chemical vapor deposition

Passively modelocked surface-emitting semiconductor lasers

High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3μm

High reflectivity Te-doped GaAsSb/AlAsSbBragg mirror for 1.5 µm surface emitting lasers

Single-frequency tunable Sb-based VCSELs emitting at 2.3 /spl mu/m

Photothermal investigations of thermal and optical properties of GaAlAsSb and AlAsSb thin layers

Low threshold, room temperature laser diode pumped Sb-based V E CSEL emitting around 2.1 µm

AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm

Quantitative thermal imaging of GaInAsSb/AlGaAsSb laser diodes by thermoreflectance