Citation Impact
Citing Papers
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Recycling lower continental crust in the North China craton
2004 StandoutNature
Reexamination of N composition dependence of coherently grown GaNAs band gap energy with high-resolution x-ray diffraction mapping measurements
1999
Electrical, structural and microstructural characteristics of as-deposited and annealed Pt and Au contacts on chemical-vapor-cleaned GaN thin films
2002 StandoutNobel
Petrogenesis of Mesozoic granitoids and volcanic rocks in South China: A response to tectonic evolution
2006 Standout
Structural and Electroluminescence Characteristics of Nonpolar Light-Emitting Diodes Fabricated on Lateral Epitaxially Overgrown a-Plane GaN
2006 StandoutNobel
A review of Ga2O3 materials, processing, and devices
2018 Standout
Thermo-tectonic destruction of the archaean lithospheric keel beneath the sino-korean craton in china: evidence, timing and mechanism
2001
Luminescence properties of defects in GaN
2005 Standout
On and Off the North China Craton: Where is the Archaean Keel?
2000
Delamination/thinning of sub-continental lithospheric mantle under Eastern China: The role of water and multiple subduction
2010 Standout
Improvement of DC and RF Characteristics of AlGaN/GaN High Electron Mobility Transistors by Thermally Annealed Ni/Pt/Au Schottky Gate
2004
GaN-Based RF Power Devices and Amplifiers
2008 Standout
Low resistance ohmic contacts on AlGaN/GaN structures using implantation and the “advancing” Al/Ti metallization
1999
Fabrication of enhancement‐mode AlxGa1–xN/GaN junction heterostructure field‐effect transistors with p‐type GaN gate contact
2007 StandoutNobel
Bowing parameter of the band-gap energy of GaNxAs1−x
1997
Electroless nickel, alloy, composite and nano coatings – A critical review
2013 Standout
GaN(0001) surface structures studied using scanning tunneling microscopy and first-principles total energy calculations
1999
Effects of Thermal Annealing on the Au/Ni and the Au/Ni/Si/Ni Contact Properties of p-type GaN Epilayers
2000
The Polarity of GaN: a Critical Review
1998
Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces
2002 StandoutNobel
Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study
2000 StandoutNobel
Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates
2005 StandoutNobel
Etching of Ga-face and N-face GaN by Inductively Coupled Plasma
2006 StandoutNobel
Chemical, electrical, and structural properties of Ni/Au contacts on chemical vapor cleaned p-type GaN
2002 StandoutNobel
AlGaN/GaN HEMTs-an overview of device operation and applications
2002 Standout
Spectroscopic Studies in InGaN Quantum Wells
1999 StandoutNobel
Effects of low energy e‐beam irradiation on cathodoluminescence from GaN
2012 StandoutNobel
Seismic imaging of the crust and upper mantle under Beijing and surrounding regions
2009
A review of the metal–GaN contact technology
1998
Continental and Oceanic Crust Recycling-induced Melt-Peridotite Interactions in the Trans-North China Orogen: U-Pb Dating, Hf Isotopes and Trace Elements in Zircons from Mantle Xenoliths
2009 Standout
Properties of the CdSe(0001), (0001), and (1120) Single Crystal Surfaces: Relaxation, Reconstruction, and Adatom and Admolecule Adsorption
2005 StandoutNobel
High-power 10-GHz operation of AlGaN HFET's on insulating SiC
1998
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Ohmic contacts to Gallium Nitride materials
2016
X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms
1999 StandoutNobel
GaN: Processing, defects, and devices
1999
Determination of wurtzite GaN lattice polarity based on surface reconstruction
1998
Comparison of Optical Properties of GaN/AlGaN and InGaN/AlGaN Single Quantum Wells
2000 StandoutNobel
Nonpolar m-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation
2006 StandoutNobel
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
1999 Standout
Ta-based interface ohmic contacts to AlGaN/GaN heterostructures
2001
Electroless deposition of NiWB alloy on p-type Si(100) for NiSi contact metallization
2009
Microstructure of AlN with two-domain structure on (001) diamond substrate grown by metal-organic vapor phase epitaxy
2009 StandoutNobel
Integration of geology, geophysics and geochemistry: A key to understanding the North China Craton
2007
Advantages of AlN/GaN Metal Insulator Semiconductor Field Effect Transistor using Wet Chemical Etching with Hot Phosphoric Acid
2001 StandoutNobel
Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates
2005 StandoutNobel
Nature of the lithospheric mantle beneath the eastern part of the Central Asian fold belt: mantle xenolith evidence
2000
The lithospheric mantle beneath the southwestern Tianshan area, northwest China
2006
Wurtzite GaN surface structures studied by scanning tunneling microscopy and reflection high energy electron diffraction
1998
Polarization charges and polarization-induced barriers in AlxGa1−xN/GaN and InyGa1−yN/GaN heterostructures
2001 StandoutNobel
Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain
2000 StandoutNobel
Observation of highly dispersive surface states on GaN(0001)1×1
1999 StandoutNobel
Effect of buffer layer and substrate surface polarity on the growth by molecular beam epitaxy of GaN on ZnO
1997
First-principles study of native point defects in ZnO
2000 Standout
Band parameters for nitrogen-containing semiconductors
2003 Standout
Mesozoic crust-mantle interaction beneath the North China craton: A consequence of the dispersal of Gondwanaland and accretion of Asia
2003
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
2000 StandoutNobel
Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
2004 StandoutNobel
Works of F. Deng being referenced
High resolution x-ray diffraction studies of AlGaP grown by gas-source molecular-beam epitaxy
1995
Study of contact formation in AlGaN/GaN heterostructures
1997
Salicidation process using NiSi and its device application
1997
Proterozoic depletion of the lithosphere recorded in mantle xenoliths from Inner Mongolia
1992 Nature
Ni and Ni silicide Schottky contacts on n-GaN
1998
Growth of GaN by gas-source molecular beam epitaxy by ammonia and by plasma generated nitrogen radicals
1996