Citation Impact

Citing Papers

Photodetectors based on graphene, other two-dimensional materials and hybrid systems
2014 Standout
Epitaxial core–shell and core–multishell nanowire heterostructures
2002 StandoutNature
Alternative Plasmonic Materials: Beyond Gold and Silver
2013 Standout
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Atomic Layer Deposition Chemistry: Recent Developments and Future Challenges
2003 Standout
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
2006 StandoutNobel
A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor
2004 StandoutNature
Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit
2017 StandoutNature
Single-nanowire electrically driven lasers
2003 StandoutNature
Recombination processes and photoluminescence intensity in quantum wells under steady-state and transient conditions
1995
The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
2004
Structural and Electroluminescence Characteristics of Nonpolar Light-Emitting Diodes Fabricated on Lateral Epitaxially Overgrown a-Plane GaN
2006 StandoutNobel
Thermally stable ohmic contacts to p-type GaAs. IX. NiInW and NiIn(Mn)W contact metals
1991
Fighting at the Interface: Structural Evolution during Heteroepitaxial Growth of Cyanometallate Coordination Polymers
2018 StandoutNobel
Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy
2000
Texture and phase transformation of sputter-deposited metastable Ta films and multilayers
1996
Luminescence properties of defects in GaN
2005 Standout
A study on strong memory effects for Mg doping in GaN metalorganic chemical vapor deposition
1994
Self-Assembled Monolayers of Thiolates on Metals as a Form of Nanotechnology
2005 Standout
Localized exciton dynamics in nonpolar (112¯) InxGa1−xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth
2005 StandoutNobel
Quantized states inGa1−xInxN/GaNheterostructures and the model of polarized homogeneous quantum wells
2000 StandoutNobel
Intriguing Optoelectronic Properties of Metal Halide Perovskites
2016 Standout
Luminescence related to high density of Mg-induced stacking faults in homoepitaxially grown GaN
2011 StandoutNobel
Silicon-based optoelectronics
1993
Localized quantum well excitons in InGaN single-quantum-well amber light-emitting diodes
2000 StandoutNobel
Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum
2012 StandoutScience
Chemical recycling to monomer for an ideal, circular polymer economy
2020
Atomic Layer Deposition: An Overview
2009 Standout
Dimensionality of excitons in laser-diode structures composed ofInxGa1−xNmultiple quantum wells
1999 StandoutNobel
Pyrolytic Depolymerization of Polyolefins Catalysed by Zirconium‐based UiO‐66 Metal–Organic Frameworks
2024 StandoutNobel
Surface sensitivity of impurity incorporation: Mg at GaN (0001) surfaces
1999
A theoretical and numerical study of a thin clamped circular film under an external load in the presence of a tensile residual stress
2003
Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer
2009 StandoutNobel
MBE growth and characterization of magnesium-doped gallium nitride
1998
Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces
2002 StandoutNobel
Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study
2000 StandoutNobel
Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates
2005 StandoutNobel
Schottky barrier heights of metals contacting to p-ZnSe
1997 StandoutNobel
Etching of Ga-face and N-face GaN by Inductively Coupled Plasma
2006 StandoutNobel
Chemical, electrical, and structural properties of Ni/Au contacts on chemical vapor cleaned p-type GaN
2002 StandoutNobel
AlGaN/GaN HEMTs-an overview of device operation and applications
2002 Standout
Properties of the main Mg-related acceptors in GaN from optical and structural studies
2014 StandoutNobel
SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1−xN
2000
Evidence for localized Si-donor state and its metastable properties in AlGaN
1999 StandoutNobel
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
2005 Standout
Mg and O codoping in p-type GaN and AlxGa1−xN (0<x<0.08)
2002
Piezoelectric Stark-like Ladder in GaN/GaInN/GaN Heterostructures
1999 StandoutNobel
Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing
2003
High dielectric constant gate oxides for metal oxide Si transistors
2005 Standout
One‐Dimensional Nanostructures: Synthesis, Characterization, and Applications
2003 Standout
Incorporation efficiency of carbon in GaAs using carbon tetrabromide in solid source molecular beam epitaxy
2004
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Efficiency optimization of p-type doping in GaN:Mg layers grown by molecular-beam epitaxy
2004
Trace Element Analysis of Fused Whole‐Rock Glasses by Laser Ablation‐ICP‐MS and PIXE
2006
Carbon - an alternative acceptor for cubic GaN
2001
Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene
2008 StandoutScience
GaN: Processing, defects, and devices
1999
Nonpolar m-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation
2006 StandoutNobel
RHEED and XPS observations of trimethylgallium adsorption on GaAs (001) surfaces—Relevance to atomic layer epitaxy
1990
Spontaneous Ordering in Bulk GaN:Mg Samples
1999
The correlation between mechanical stress and magnetic anisotropy in ultrathin films
1999
Recombination dynamics of localized excitons in Al1−xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy
2003 StandoutNobel
In situ analysis of major and trace elements of anhydrous minerals by LA-ICP-MS without applying an internal standard
2008 Standout
Atomic Scale Indium Distribution in a GaN/In0.43Ga0.57N/Al0.1Ga0.9N Quantum Well Structure
1997 StandoutNobel
Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates
2005 StandoutNobel
Gallium nitride materials - progress, status, and potential roadblocks
2002 StandoutNobel
Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition
2002
Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
2004 StandoutNobel
Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain
2000 StandoutNobel
Copper interconnections and reliability
1998
Enhanced Solubility of Impurities and Enhanced Diffusion near Crystal Surfaces
1995
Photoluminescence of AlxGa1−xAs alloys
1994
Donor-related levels in GaAs and AlxGa1-xAs
1991
First-principles calculations for defects and impurities: Applications to III-nitrides
2004 Standout
Recent advances on electromigration in very-large-scale-integration of interconnects
2003 Standout
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
2000 StandoutNobel
Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
2004 StandoutNobel

Works of F. Cardone being referenced

Comparison of high vacuum and ultra-high-vacuum tantalum diffusion barrier performance against copper penetration
1993
Influence of polymer modification on asphalt binder dynamic and steady flow viscosities
2014
Characterization of epitaxial GaAs and AlxGa1−xAs layers doped with oxygen
1991
The control and modeling of doping profiles and transients in MOVPE growth
1988
Annealing behavior of GaAs implanted with Si+ and SiF+ and rapid thermally annealed with plasma-enhanced chemical vapor deposited silicon nitride cap
1990
Doping and dopant behavior in (Al,Ga)As grown by metalorganic vapor phase epitaxy
1989
Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy
1988
Mg in GaN: Incorporation of a volatile species at high temperatures during molecular beam epitaxy
1997
Ge segregation in SiGe/Si heterostructures and its dependence on deposition technique and growth atmosphere
1993
Carbon incorporation in metalorganic vapor phase epitaxy grown GaAs using CHyX4 − y, TMG and AsH3
1991
Amorphous (Mo, Ta, or W)–Si–N diffusion barriers for Al metallizations
1996
Film stress of sputtered W/C multilayers and strain relaxation upon annealing
1994
Synthesis of Si1−yCy alloys by molecular beam epitaxy
1992
High carbon doping efficiency of bromomethanes in gas source molecular beam epitaxial growth of GaAs
1991
Effect of F co-implant during annealing of Be-implanted GaAs
1990
Quantitative analysis of complex targets by proton-induced x rays
1975
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