Euijun Cha

Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors

Volatile resistance states in electrochemical metallization cells enabling non-destructive readout of complementary resistive switches

Fully hardware-implemented memristor convolutional neural network

Optoelectronic resistive random access memory for neuromorphic vision sensors

Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing

Memristive crossbar arrays for brain-inspired computing

On‐Demand Reconfiguration of Nanomaterials: When Electronics Meets Ionics

Crossbar RRAM Arrays: Selector Device Requirements During Write Operation

Extraordinary Dielectric Properties at Heterojunctions of Amorphous Ferroelectrics

The future of electronics based on memristive systems

In-memory computing with resistive switching devices

Physical Unclonable Function Exploiting Sneak Paths in Resistive Cross-point Array

Very Low-Programming-Current RRAM With Self-Rectifying Characteristics

Neuromorphic computing using non-volatile memory

Resistive random access memory and its applications in storage and nonvolatile logic

Hardware implementation of associative memory characteristics with analogue-type resistive-switching device

Control of Cu Conductive Filament in Complementary Atom Switch for Cross-Point Selector Device Application

Nanoscale (&#x223C;10nm) 3D vertical ReRAM and NbO<inf>2</inf> threshold selector with TiN electrode

Ultrathin (&amp;lt;10nm) Nb<inf>2</inf>O<inf>5</inf>/NbO<inf>2</inf> hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications

Electrical and reliability characteristics of a scaled (&#x223C;30nm) tunnel barrier selector (W/Ta<inf>2</inf>O<inf>5</inf>/TaO<inf>x</inf>/TiO<inf>2</inf>/TiN) with excellent performance (J<inf>MAX</inf> &#x003E; 10⁷A/cm²)

High Current Density and Nonlinearity Combination of Selection Device Based on TaO_x/TiO₂/TaO_x Structure for One Selector–One Resistor Arrays

Demonstration of Low Power 3-bit Multilevel Cell Characteristics in a TaO_{<italic>x</italic>}-Based RRAM by Stack Engineering

Complementary Resistive Switching in Niobium Oxide-Based Resistive Memory Devices