Eric Karl

The physics of optical computing

Wurtzite and fluorite ferroelectric materials for electronic memory

A 23.6-Mb/mm<inline-formula> <tex-math notation="LaTeX">$^{2}$ </tex-math> </inline-formula> SRAM in 10-nm FinFET Technology With Pulsed-pMOS TVC and Stepped-WL for Low-Voltage Applications

A 4.6 GHz 162 Mb SRAM Design in 22 nm Tri-Gate CMOS Technology With Integrated Read and Write Assist Circuitry