Standout Papers

Global transition path search for dislocation formation in Ge on Si(001) 2016 2026 2019 2022 354
  1. Global transition path search for dislocation formation in Ge on Si(001) (2016)
    Émile Maras, Oleg Trushin et al. Computer Physics Communications

Immediate Impact

2 from Science/Nature 54 standout
Sub-graph 1 of 25

Citing Papers

A Comprehensive Review on the Boosted Effects of Anion Vacancy in the Heterogeneous Photocatalytic Degradation, Part II: Focus on Oxygen Vacancy
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Achieving excellent mechanical and robust lubrication behavior in the CoCrNi medium-entropy alloy via in-situ graphite
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2 intermediate papers

Works of Émile Maras being referenced

Determination of the structure and properties of an edge dislocation in rutile TiO2
2018
Global transition path search for dislocation formation in Ge on Si(001)
2016 Standout

Author Peers

Author Last Decade Papers Cites
Émile Maras 352 53 11 124 106 13 479
Chang-Lin Tien 369 32 12 144 84 20 559
S. Hara 349 24 5 112 70 15 504
L.H. Liang 312 157 40 69 68 18 517
Minoru Nonoyama 186 118 6 83 88 10 483
Wuwei Liang 434 63 1 80 138 11 517
Peter W. Jacobs 374 62 3 65 134 16 566
H. G. van Bueren 326 27 5 73 179 15 547
L. Himmel 296 28 4 59 210 16 513
J. A. Rifkin 307 90 3 50 219 24 455
Rodrigo Freitas 362 89 8 81 169 27 528

All Works

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2026