Immediate Impact

8 standout
Sub-graph 1 of 4

Citing Papers

Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives
2024 Standout
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
2018 Standout
2 intermediate papers

Works of Eiichi Mizuta being referenced

Single-Event Damage Observed in GaN-on-Si HEMTs for Power Control Applications
2018
Investigation of Single-Event Damages on Silicon Carbide (SiC) Power MOSFETs
2014

Author Peers

Author Last Decade Papers Cites
Eiichi Mizuta 189 10 5 36 27 12 249
S. Hedges 51 13 77 49 18 169
J.S. Cable 227 36 6 6 27 16 288
G. Zizka 39 5 21 41 12 105
W. Faszer 82 8 9 92 17 152
K. Tsukada 56 16 79 75 16 210
K. Martens 45 4 1 10 64 11 141
E. Ihloff 69 20 9 47 15 139
H. Tatsuno 39 8 1 44 32 11 119
S. Walsh 95 5 13 39 12 155
M. Rossat 67 13 2 42 13 11 268

All Works

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Rankless by CCL
2026