Citation Impact
Citing Papers
Solar-to-hydrogen efficiency of more than 9% in photocatalytic water splitting
2023 StandoutNature
Demonstration of gate control of spin splitting in a high-mobility InAs/AlSb two-dimensional electron gas
2016 StandoutNobel
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
A fully photonics-based coherent radar system
2014 StandoutNature
Dependence of Resonance Energy Transfer on Exciton Dimensionality
2011 StandoutNobel
Single-junction organic solar cells with over 19% efficiency enabled by a refined double-fibril network morphology
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Refractive index study of AlxGa1−xN films grown on sapphire substrates
2003
Size-Dependent Charge Collection in Junctions Containing Single-Size and Multi-Size Arrays of Colloidal CdSe Quantum Dots
2007 StandoutNobel
Electron mobilities exceeding 107 cm2/V s in modulation-doped GaAs
1989 StandoutNobel
Optically Pumped Lasing at 353 nm Using Non-polar a-plane AlGaN Multiple Quantum Wells over r-plane Sapphire
2004
Integrated microwave photonics
2019 Standout
Luminescence properties of defects in GaN
2005 Standout
Spintronics: Fundamentals and applications
2004 Standout
Modelling of Extraction Efficiency of GaN-Based Resonant Cavity Light Emitting Diodes Emitting at 510 nm
2002
Unusual luminescence lines in GaN
2003
Growth of low-density two-dimensional electron system with very high mobility by molecular beam epitaxy
1988
Systematic measurement of AlxGa1−xN refractive indices
2001
Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition
2009 StandoutNobel
First-principles calculation of the AlAs/GaAs interface band structure using a self-energy–corrected local density approximation
2011
Green and red emission in Ca implanted GaN samples
2001
GaN Resonant Cavity Light-Emitting Diodes for Plastic Optical Fiber Applications
2004
Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique
2014 StandoutNobel
Semiconductor amplifiers and lasers with tapered gain regions
1996
Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates
2006 StandoutNobel
Magnetic switch for integrated atom optics
2001 StandoutNobel
Semiconductor crystallites: a class of large molecules
1990 StandoutNobel
Phosphors in phosphor-converted white light-emitting diodes: Recent advances in materials, techniques and properties
2010 Standout
Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101¯1¯) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
2010 StandoutNobel
Improved bit error rate evaluation for optically pre-amplified free-space optical communication systems in turbulent atmosphere
2012
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Photovoltaic quantum-dot infrared detectors
2000
Probing the AlxGa1−xN spatial alloy fluctuation via UV-photoluminescence and Raman at submicron scale
2002 StandoutNobel
Individual Roles of Atoms and Ions during Hydrogen Plasma Passivation of Surface Defects on GaN Created by Plasma Etching
2012 StandoutNobel
Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films
2009 StandoutNobel
Microscopical Structuring of Solids by Molecular Beam Epitaxy—Spatially Resolved Materials Synthesis
1988
Enhanced modulation bandwidth for strain-compensated InGaAlAs-InGaAsP MQW lasers
1998 StandoutNobel
Guiding laser-cooled atoms in hollow-core fibers
2000 StandoutNobel
Extracting Microscopic Device Parameters from Transient Photocurrent Measurements of P3HT:PCBM Solar Cells
2012
Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN
2005 StandoutNobel
Gallium Indium Nitride-Based Green Lasers
2011
Survey on Free Space Optical Communication: A Communication Theory Perspective
2014 Standout
Guiding Neutral Atoms Around Curves with Lithographically Patterned Current-Carrying Wires
1999 StandoutNobel
Band-gap measurements of direct and indirect semiconductors using monochromated electrons
2007
Entirely Crack-Free Ultraviolet GaN/AlGaN Laser Diodes Grown on 2-in. Sapphire Substrate
2007 StandoutNobel
Suppression of relaxation in (202¯1) InGaN/GaN laser diodes using limited area epitaxy
2012 StandoutNobel
Visible-light driven heterojunction photocatalysts for water splitting – a critical review
2015 Standout
Evidence for the Fractional Quantum Hall State atν = 1 7
1988 StandoutNobel
Optical gain, carrier-induced phase shift, and linewidth enhancement factor in InGaN quantum well lasers
2003
Optical waveguide simulations for the optimization of InGaN-based green laser diodes
2010 StandoutNobel
Time resolved study of laser diode characteristics during pulsed operation
2003
Determination of the refractive indices of AlN, GaN, and AlxGa1−xN grown on (111)Si substrates
2003
Generation of millimetre-wave radiation using adual-longitudinal-mode microchip laser
1996
Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels
2004 StandoutNobel
Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes
2013 StandoutNobel
Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region
2014 StandoutNobel
Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission
2012 StandoutNobel
Novel design scheme for high-speed MQW lasers with enhanced differential gain and reduced carrier transport effect
1998 StandoutNobel
Determination of internal parameters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes
2011 StandoutNobel
Microwave photonics combines two worlds
2007 Standout
Quantum crystallites and nonlinear optics
1991 StandoutNobel
Advances in terahertz communications accelerated by photonics
2016 Standout
Optical excitations in electron microscopy
2010 Standout
Two-dimensional electron system with extremely low disorder
1988 StandoutNobel
Gallium nitride based microcavity light emitting diodes with 2λ effective cavity thickness
2007 StandoutNobel
Band parameters for nitrogen-containing semiconductors
2003 Standout
Crack-Free AlN/GaN Distributed Bragg Reflectors on AlN Templates
2012 StandoutNobel
Nature of yellow luminescence band in GaN grown on Si substrate
2014 StandoutNobel
m -plane pure blue laser diodes with p-GaN/n-AlGaN-based asymmetric cladding and InGaN-based wave-guiding layers
2009 StandoutNobel
Absorption spectroscopy studies of strained InGaAs/GaAs single-quantum wells
1994
Spin transport driven by giant ambipolar diffusion
2002
Works of E.C. Larkins being referenced
Band offset determination of the GaAs/GaAsN interface using the density functional theory method
2008
Determination of the band offset and the characteristic interdiffusion length in quantum-well lasers using a capacitance–voltage technique
2000
Defect and strain redistribution in InxGa1−xAs/GaAs multiple quantum wells studied by resonant Raman scattering
1993
Photoluminescence spectroscopy on annealed molecular beam epitaxy grown GaN
2001
Control of differential gain, nonlinear gain and damping factor for high-speed application of GaAs-based MQW lasers
1993
GaAs with very low acceptor impurity background grown by molecular beam epitaxy
1987
Optical signal quality metric based on statistical moments and Laguerre expansion
2008
Damping-limited modulation bandwidths up to 40 GHz in undoped short-cavity In/sub 0.35/Ga/sub 0.65/As-GaAs multiple-quantum-well lasers
1996
Tapered InGaAs/GaAs MQW laserswith carbon modulation-dopingand reduced filamentation
1995
Improved refractive index formulas for the AlxGa1−xN and InyGa1−yN alloys
2001
The impact of hot-phonons on the performance of 1.3µm dilute nitride edge-emitting quantum well lasers
2007
Reduction of the acceptor impurity background in GaAs grown by molecular beam epitaxy
1986
Diffusive electrical conduction in high-speed p-i-n photodetectors
1992
Capture dynamics and far-infrared response in photovoltaic quantum well intersubband photodetectors
1996