Citation Impact
Citing Papers
Alternative Plasmonic Materials: Beyond Gold and Silver
2013 Standout
Detection of individual gas molecules adsorbed on graphene
2007 StandoutNobel
Density of States and Zero Landau Level Probed through Capacitance of Graphene
2010 StandoutNobel
Elastic Scattering Time of Matter Waves in Disordered Potentials
2019 StandoutNobel
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
2012 Standout
Lateral epitaxial overgrowth of GaAs by organometallic chemical vapor deposition
1982
Properties of the apparent metal-insulator transition in two-dimensional systems
1998 StandoutNobel
MOVPE growth of GaAs using a N2 carrier
1992
Experimental evidence for finite-width edge channels in integer and fractional quantum Hall effects
1993 StandoutNobel
Hydrogen adsorption on GaAs(110) studied by temperature-programmed desorption
1984
Chemical Composition of AlN Thin Films Deposited at 523−723 K Using Dimethylethylamine Alane and Ammonia
1998
Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
1997 StandoutNobel
Growth and characterization of device quality GaAs produced by laser-assisted atomic layer epitaxy using triethylgallium
1993
Film/Substrate Orientation Relationship in theAIN / 6 H
1996 StandoutNobel
Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
1994 Standout
Recent progress in atomic layer epitaxy of III–V compounds
1988
Breakdown of universal scaling of conductance fluctuations in high magnetic fields
1992 StandoutNobel
Energy Structure and Quantized Hall Effect of Two-Dimensional Holes
1983 StandoutNobel
Spintronics: Fundamentals and applications
2004 Standout
A density-functional study of cluster reactivity: Ammonia reacting with a free Ga5As5 cluster
1994 StandoutNobel
Recombination dynamics of a 268nm emission peak in Al0.53In0.11Ga0.36N∕Al0.58In0.02Ga0.40N multiple quantum wells
2006 StandoutNobel
Deep donor levels (D X centers) in III-V semiconductors
1990
Quantum Hall effect in InAs/AlSb quantum wells
1991 StandoutNobel
A study of the OMVPE growth mechanisms using internal reflectance spectroscopy to examine adsorption of TMGa and NH3 and surface reactions between them
1989
Atomic layer epitaxy of GaAs using N2 carrier gas
1991
Heat-capacity study of two-dimensional electrons in GaAs/Al x Ga 1 − x
1992 StandoutNobel
Compensation in heavily doped n-type InP and GaAs
1985
Cathodoluminescence studies of the deep level emission bands of AlxGa1−xN films deposited on 6H–SiC(0001)
1998 StandoutNobel
Resonant tunneling in magnetic field: Evidence for space-charge buildup
1987 StandoutNobel
Experimental study ofσ x x
1994 StandoutNobel
Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer
2009 StandoutNobel
Inorganic nanoparticles in porous coordination polymers
2016 StandoutNobel
Atomic layer epitaxy of compound semiconductors with metalorganic precursors
1989
Basic studies of gallium nitride growth on sapphire by metalorganic chemical vapor deposition and optical properties of deposited layers
1995
Magnetic-Field-Induced Spin-Conserving and Spin-Flip Intersubband Transitions in InAs Quantum Wells
1995 StandoutNobel
Cyclotron resonance of high-mobility two-dimensional electrons at extremely low densities
1988 StandoutNobel
Properties of the main Mg-related acceptors in GaN from optical and structural studies
2014 StandoutNobel
SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1−xN
2000
Evidence for localized Si-donor state and its metastable properties in AlGaN
1999 StandoutNobel
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
2005 Standout
Heavily doped GaAs:Se. II. Electron mobility
1990
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Defect-mediated surface morphology of nonpolar m-plane GaN
2007 StandoutNobel
Scaling in spin-degenerate Landau levels in the integer quantum Hall effect
1993 StandoutNobel
InAs-AlSb quantum wells in tilted magnetic fields
2000 StandoutNobel
Ammonia chemisorption on gallium arsenide clusters
1990 StandoutNobel
X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms
1999 StandoutNobel
Electrical and structural properties of AlGaN/AlGaN superlattice structures grown by metal-organic chemical vapor deposition
2003
Interface roughness scattering in InAs/AlSb quantum wells
1992 StandoutNobel
Electronic transport in two-dimensional graphene
2011 Standout
Calculated thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN
2013 StandoutNobel
Atomic layer epitaxy of device quality GaAs
1989
Doping of gallium nitride using disilane
1995
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
1999 Standout
Maskless lateral epitaxial overgrowth of high-aluminum-content AlxGa1−xN
2004
Evidence for the Fractional Quantum Hall State atν = 1 7
1988 StandoutNobel
The physics and technology of gallium antimonide: An emerging optoelectronic material
1997
Gallium nitride materials - progress, status, and potential roadblocks
2002 StandoutNobel
Control of strain in GaN by a combination of H2 and N2 carrier gases
2001 StandoutNobel
Optical characterization of molecular beam epitaxially grown InAsSb nearly lattice matched to GaSb
1998
Transport anomalies in the lowest Landau level of two-dimensional electrons at half-filling
1989 StandoutNobel
Density of States and de Haas—van Alphen Effect in Two-Dimensional Electron Systems
1985 StandoutNobel
OMVPE growth of metastable GaAsSb and GaInAsSb alloys using TBAs and TBDMSb
1997
Substrate-polarity dependence of metal-organic vapor-phase epitaxy-grown GaN on SiC
1988
Temperature dependence of the quantized Hall effect
1985 StandoutNobel
Lateral epitaxial overgrowth of aluminum nitride on patterned silicon carbide substrates by hydride vapor phase epitaxy
2007 StandoutNobel
Selective vapor-phase deposition on patterned substrates
1990
Threshold transport of high-mobility two-dimensional electron gas in GaAs/AlGaAs heterostructures
1988 StandoutNobel
Chemical vapor deposition of metals: Part 1. An overview of CVD processes
1995
Absorption of ballistic phonons by the (001) inversion layer of Si: Electron-phonon interaction in two dimensions
1983 StandoutNobel
Dependence of the AlxGa1−xAs band edge on alloy composition based on the absolute measurement of x
1987
High quality AlN grown on SiC by metal organic chemical vapor deposition
2008 StandoutNobel
Photoluminescence of AlxGa1−xAs alloys
1994
Two-dimensional electron and hole gases at the surface of graphite
2005 StandoutNobel
Electronic properties of two-dimensional systems
1982 Standout
Resonant tunneling of two-dimensional electrons into one-dimensional subbands of a quantum wire
1991 StandoutNobel
Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition
2003
Works of E. Veuhoff being referenced
Sulfur incorporation in VPE GaAs
1981
Electron mobility in compensated VPE GaAs films
1980
Deposition of III–V compounds by MO-CVD and in halogen transport systems — A critical comparison
1981
Mechanism of carbon incorporation in MOCVD GaAs
1984
The influence of growth chemistry on the MOVPE growth of GaAs and AlxGa1−xAs layers and heterostructures
1986
Mg diffusion during metalorganic vapor phase epitaxy of InP
1989
Metalorganic CVD of GaAs in a molecular beam system
1981
Silicon doping of GaAs and AlxGa1−xAs using disilane in metalorganic chemical vapor deposition
1984
Disilane: A new silicon doping source in metalorganic chemical vapor deposition of GaAs
1984
Silicon migration during MOVPE of AlGaAs/GaAs laser structures
1988
A Study of Silicon Incorporation in GaAs MOCVD Layers
1985
Hall effect measurements on ZnO accumulation layers
1981
Properties of high-purity AlxGa1−xAs grown by the metalorganic vapor-phase-epitaxy technique using methyl precursors
1987
Kinetics of GaAs growth by low pressure MO-CVD
1984