Citation Impact
Citing Papers
Fabrication of aluminium nitride/diamond and gallium nitride/diamond SAW devices
1999
Control of Coherent Acoustic Phonons in Semiconductor Quantum Wells
2001
Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
2011 Standout
Raman scattering from phonon-polaritons in GaN
2000 StandoutNobel
Growth and applications of Group III-nitrides
1998
Temperature dependence of excitonic transitions in a-plane AlN epitaxial layers
2009 StandoutNobel
Structural and vibrational properties of GaN
1999 StandoutNobel
Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures
2002
Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures
2003
Internal efficiency analysis of 280-nm light emitting diodes
2004 StandoutNobel
Electrical properties of strained AlN/GaN superlattices on GaN grown by metalorganic vapor phase epitaxy
2002 StandoutNobel
Quantum ground state and single-phonon control of a mechanical resonator
2010 StandoutNatureNobel
Hexagonal AlN films grown on nominal and off-axis Si(001) substrates
2001
Influence of polarization fields and depletion fields on photoluminescence of AlGaN/GaN multiple quantum well structures
2003 StandoutNobel
Recent applications of big data analytics in railway transportation systems: A survey
2018 Standout
First-principles calculation of the piezoelectric tensor d⇊ of III–V nitrides
2002
Epitaxial growth of GaN by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) in the downflow of a very high frequency (VHF) N2/H2 excited plasma – effect of TMG flow rate and VHF power
2014 StandoutNobel
Temperature dependence of the thermal expansion of GaN
2005
GaN-on-Si Power Technology: Devices and Applications
2017 Standout
Deformation potentials of the E1(TO) mode in AlN
2002
Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy
2006 StandoutNobel
Surface potential effect on excitons in AlGaN/GaN quantum well structures
2013 StandoutNobel
Synthesis of highly oriented piezoelectric AlN films by reactive sputter deposition
2000
Anisotropic strain and phonon deformation potentials in GaN
2007 StandoutNobel
Growth-induced defects in AlN/GaN superlattices with different periods
2003 StandoutNobel
Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates
2006 StandoutNobel
Phonon deformation potentials of wurtzite AlN
2003
Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101¯1¯) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
2010 StandoutNobel
Growth mechanism of c-axis-oriented AlN on (1 1 1) diamond substrates by metal-organic vapor phase epitaxy
2009 StandoutNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Near-field investigation of spatial variations of (202¯1¯) InGaN quantum well emission spectra
2013 StandoutNobel
Polarization anisotropy in nonpolar oriented GaN films studied by polarized photoreflectance spectroscopy
2007 StandoutNobel
Calculation of electric field and optical transitions in InGaN∕GaN quantum wells
2005
Indium incorporation above 800 °C during metalorganic vapor phase epitaxy of InGaN
1999
Growth mechanism of c-axis-oriented AlN on (0 0 1) diamond substrates by metal-organic vapor phase epitaxy
2009 StandoutNobel
Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers
2001
Phonon deformation potentials in hexagonal GaN
2004
Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges
2009 StandoutNobel
Wireless Sensor Networks for Condition Monitoring in the Railway Industry: A Survey
2014
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
2000
Thermoelectric properties of lattice matched InAlN on semi-insulating GaN templates
2012 StandoutNobel
Towards the Internet of Smart Trains: A Review on Industrial IoT-Connected Railways
2017 Standout
Crystal Growth of High-Quality AlInN/GaN Superlattices and of Crack-Free AlN on GaN: Their Possibility of High Electron Mobility Transistor
2001 StandoutNobel
Microstructure of AlN with two-domain structure on (001) diamond substrate grown by metal-organic vapor phase epitaxy
2009 StandoutNobel
Temperature dependence of excitonic recombination in lateral epitaxially overgrown InGaN/GaN quantum wells studied with cathodoluminescence
2004
Strain relaxation in (0001) AlN/GaN heterostructures
2001
Strain-induced polarization in wurtzite III-nitride semipolar layers
2006 StandoutNobel
Phonon mode behavior in strained wurtziteAl N ∕ Ga N
2005 StandoutNobel
Spontaneous and piezoelectric polarization effects in III–V nitride heterostructures
1999
Nanoscale thermal transport
2003 Standout
Photoluminescence study of MOCVD-grown GaN/AlGaN MQW nanostructures: influence of Al composition and Si doping
2006 StandoutNobel
An attenuated-total-reflection study on the surface phonon-polariton in GaN
2000 StandoutNobel
Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers
2006 StandoutNobel
Properties of strained wurtzite GaN and AlN:Ab initiostudies
2002
Polarization charges and polarization-induced barriers in AlxGa1−xN/GaN and InyGa1−yN/GaN heterostructures
2001 StandoutNobel
Photoreflectance spectra of excitonic polaritons in GaN substrate prepared by lateral epitaxial overgrowth
2000 StandoutNobel
Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯2) semipolar versus (0001) polar planes
2014 StandoutNobel
Photoluminescence from highly excited AlN epitaxial layers
2008 StandoutNobel
X-ray diffraction of III-nitrides
2009
Characterization of nanoscale electronic structure in nonpolar GaN using scanning capacitance microscopy
2008 StandoutNobel
Band parameters for nitrogen-containing semiconductors
2003 Standout
First-principles calculations for defects and impurities: Applications to III-nitrides
2004 Standout
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
2000 StandoutNobel
Correlation between biaxial stress and free exciton transition in AlN epilayers
2007
Works of E. Riha being referenced
Sound velocity of AlxGa1−xN thin films obtained by surface acoustic-wave measurements
1998
SAW-based redio sensor systems for short-range applications
2003