E. Playez

Electronics based on two-dimensional materials

Graphene transistors

Accurate simulation of GaAs MESFET's intermodulation distortion using a new drain-source current model

Control of Threshold Voltage of Enhancement-Mode Al_xGa_1-xN/GaN Junction Heterostructure Field-Effect Transistors Using p-GaN Gate Contact

Thermally Driven Transport and Relaxation Switching Self‐Powered Electromagnetic Energy Conversion

Impact of Graphene Interface Quality on Contact Resistance and RF Device Performance

GaN-Based RF Power Devices and Amplifiers

Picosecond large-signal switching characteristics of a pseudomorphic AlGaAs/InGaAs modulated doped field effect transistor

Fabrication of enhancement‐mode Al_xGa_1–xN/GaN junction heterostructure field‐effect transistors with p‐type GaN gate contact

Mechanism of H2 pre-annealing on the growth of GaN on sapphire by MOVPE

Large-signal model of picosecond FETs and measurement of the step response

Performance enhancement by using the n/sup +/-GaN cap layer and gate recess technology on the AlGaN-GaN HEMT fabrication

Bias dependence of the MODFET intrinsic model elements values at microwave frequencies

0.12-μm gate III-V nitride HFET's with high contact resistances

Transport conductivity of graphene at RF and microwave frequencies

An improved small-signal equivalent circuit model for III-V nitride MODFET's with large contact resistances

Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact

Wideband Balun-LNA With Simultaneous Output Balancing, Noise-Canceling and Distortion-Canceling

Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance

Improved charge control and frequency performance in InAs/AlSb-based heterostructure field-effect transistors

Impact of H₂-Preannealing of the Sapphire Substrate on the Crystallinity of Low-Temperature-Deposited AlN Buffer Layer

High On/Off Ratio in Enhancement-Mode Al_xGa_1-xN/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact

A new method for determining the FET small-signal equivalent circuit