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Citing Papers
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2002
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Those Blinking Single Molecules
1997 StandoutScienceNobel
High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm$^{2}$
2011 StandoutNobel
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2017
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2011
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2008
Enhanced Mg doping efficiency in Al0.2Ga0.8N/GaN superlattices
1999
Observation of optically-active metastable defects in undoped GaN epilayers
1998
Measurement of electron overflow in 450 nm InGaN light-emitting diode structures
2009 StandoutNobel
Luminescence properties of defects in GaN
2005 Standout
Dislocation Filtering in GaN Nanostructures
2010
The doping process and dopant characteristics of GaN
2002
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2003
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2011
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2002
Evidence of compensating centers as origin of yellow luminescence in GaN
1997
The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures
2012
4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes
2003
From N isoelectronic impurities to N-induced bands in the GaNxAs1−x alloy
2000
Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer
2010
Optical investigations of AlGaN on GaN epitaxial films
1999 StandoutNobel
Near-Field Spectroscopy of the Quantum Constituents of a Luminescent System
1994 StandoutScienceNobel
Magnetoresistance Oscillations in a Two-Dimensional Electron Gas Induced by a Submicrometer Periodic Potential
1989 Nobel
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
2019 StandoutNobel
Highly efficient broad‐area blue and white light‐emitting diodes on bulk GaN substrates
2008 StandoutNobel
Photoluminescence dynamics of AlGaN quantum wells with built‐in electric fields and localized states
2009
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2005
Catalytic Enantioselective Conversion of Epoxides to Thiiranes
2016 StandoutNobel
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2000 StandoutNobel
Cathodoluminescence studies of the deep level emission bands of AlxGa1−xN films deposited on 6H–SiC(0001)
1998 StandoutNobel
Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructures
2009 Science
Comprehensive characterization of hydride VPE grown GaN layers and templates
2001
Optical absorption and emission of InP1−xSbx alloys
1990
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2002
Evidence for a phase transition in the fractional quantum Hall effect
1989 StandoutNobel
Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material
2012
Kondo effect in a single-electron transistor
1998 StandoutNature
Structural and optical properties of AlInN and AlGaInN on GaN grown by metalorganic vapor phase epitaxy
1998 StandoutNobel
Electron-spin resonance in the two-dimensional electron gas of GaAs-Al x Ga 1 − x
1988 Nobel
High-power deep ultraviolet light-emitting diodes basedon a micro-pixel design
2004
Mixed Monolayers of Spiropyrans Maximize Tunneling Conductance Switching by Photoisomerization at the Molecule–Electrode Interface in EGaIn Junctions
2016 StandoutNobel
Optical study on ultrathin InAs/InP single quantum wells
1995
High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates
2013 StandoutNobel
The red σ2/kT spectral shift in partially disordered semiconductors
2003
GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications
1985 Standout
High-pressure study of optical transitions in strainedIn 0.2 Ga 0.8
1996
226 nm AlGaN/AlN UV LEDs using p-type Si for hole injection and UV reflection
2018
Stretchable and Soft Electronics using Liquid Metals
2017 Standout
Influence of polarity on carrier transport in semipolar (2021¯) and (202¯1) multiple-quantum-well light-emitting diodes
2012 StandoutNobel
Influence of Si doping on optical characteristics of cubic GaN grown on (001) GaAs substrates
2000
Observation of photoluminescence from Al1−xInxN heteroepitaxial films grown by metalorganic vapor phase epitaxy
1998 StandoutNobel
High valence-band offset of GaSbAs-InAlAs quantum wells grown by molecular beam epitaxy
1992
Electroluminescence efficiency of (1\,0\,\bar{1}\,0) -oriented InGaN-based light-emitting diodes at low temperature
2008 StandoutNobel
A mixed-cation lead mixed-halide perovskite absorber for tandem solar cells
2016 StandoutScience
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2017
Analysis of the temperature and excitation intensity dependencies of photoluminescence in undoped GaN films
2001
Reduction in Thermal Droop Using Thick Single-Quantum-Well Structure in Semipolar ($20\bar{2}\bar{1}$) Blue Light-Emitting Diodes
2012 StandoutNobel
Optical and electrical properties of Al1−xInxN films grown by plasma source molecular-beam epitaxy
2001
Temperature dependence of the dielectric function and the interband critical-point parameters ofAl x Ga 1 − x
1991
Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths
2003
Single-Wire Light-Emitting Diodes Based on GaN Wires Containing Both Polar and Nonpolar InGaN/GaN Quantum Wells
2011
Spectral distribution of excitation-dependent recombination rate in an In0.13Ga0.87N epilayer
2013
Simulation of visible and ultra-violet group-III nitride light emitting diodes
2005
High Output Power from 260 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Improved Thermal Performance
2011
Band-gap narrowing and potential fluctuation in Si-doped GaN
1999
Formamidinium and Cesium Hybridization for Photo‐ and Moisture‐Stable Perovskite Solar Cell
2015
High-Power, Low-Efficiency-Droop Semipolar ($20\bar{2}\bar{1}$) Single-Quantum-Well Blue Light-Emitting Diodes
2012 StandoutNobel
Influence of defect states on the nonlinear optical properties of GaN
1999
Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes
2017
Fractional Quantum Hall Effect aroundν = 3 2
1995 StandoutNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Growth and characterization of Mg-doped AlGaN–AlN short-period superlattices for deep-UV optoelectronic devices
2010
Direct measurement of auger recombination in In0.1Ga0.9N/GaN quantum wells and its impact on the efficiency of In0.1Ga0.9N/GaN multiple quantum well light emitting diodes
2009
Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells
2011 StandoutNobel
On the importance of radiative and Auger losses in GaN-based quantum wells
2008
Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes
2010
Voltage-Driven Conformational Switching with Distinct Raman Signature in a Single-Molecule Junction
2018 StandoutNobel
Optical properties of InxGa1−xN alloys grown by metalorganic chemical vapor deposition
1998
Plasmonics: Merging Photonics and Electronics at Nanoscale Dimensions
2006 StandoutScience
Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges
2009 StandoutNobel
Two Dimensional Electrons in a Lateral Magnetic Superlattice
1995 StandoutNobel
Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates
2010 StandoutNobel
Electron beam and optical depth profiling of quasibulk GaN
2000
Carrier Transport in InGaN MQWs of Aquamarine- and Green-Laser Diodes
2011
History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination
2013 StandoutNobel
Suppression of yellow luminescence in As-doped GaN epilayers grown by metalorganic chemical vapor deposition
2000
Recombination dynamics of localized excitons in Al1−xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy
2003 StandoutNobel
Effects of exciton localization on internal quantum efficiency of InGaN nanowires
2013 StandoutNobel
Study on the Current Spreading Effect and Light Extraction Enhancement of Vertical GaN/InGaN LEDs
2011
A vacuum flash–assisted solution process for high-efficiency large-area perovskite solar cells
2016 StandoutScience
Optical properties of InAlGaAs quantum wells: Influence of segregation and band bowing
1999
High-power low-droop violet semipolar (303¯1¯) InGaN/GaN light-emitting diodes with thick active layer design
2014 StandoutNobel
Incorporation of rubidium cations into perovskite solar cells improves photovoltaic performance
2016 StandoutScience
Structural Properties of Al 1- xIn xN Ternary Alloys on GaN Grown by Metalorganic Vapor Phase Epitaxy
1998 StandoutNobel
Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region
2014 StandoutNobel
Internal quantum efficiency in AlGaN with strong carrier localization
2012
Highly selective photoelectrochemical etching of nitride materials for defect investigation and device fabrication
2001
High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop
2013
Analysis of efficiency droop in 280-nm AlGaN multiple-quantum-well light-emitting diodes based on carrier rate equation
2015
Internal Quantum Efficiency and Nonradiative Recombination Rate in InGaN-Based Near-Ultraviolet Light-Emitting Diodes
2012
Free-carrier and phonon properties ofn- andp-type hexagonal GaN films measured by infrared ellipsometry
2000
Sharp-line photoluminescence of excitons localized at GaAs/AlGaAs quantum well inhomogeneities
1994
GaN-Based Light-Emitting Diodes: Efficiency at High Injection Levels
2010
Growth of AlGaN on Si(111) by gas source molecular beam epitaxy
2000
Short- and long-range-order effects on the electronic properties of III-V semiconductor alloys
1995
Self-assembled hierarchical nanostructured perovskites enable highly efficient LEDs via an energy cascade
2018
Two-Dimensional Electron Gas at GaAs/Ga0.52In0.48P Heterointerface Grown by Chloride Vapor-Phase Epitaxy
1986
Origin of electrons emitted into vacuum from InGaN light emitting diodes
2014 StandoutNobel
Efficiency droop in nitride‐based light‐emitting diodes
2010
Moving photoluminescence bands in GaAs1−xSbx layers grown by molecular beam epitaxy on InP substrates
1994
The reduction of efficiency droop by Al0.82In0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes
2012 StandoutNobel
Reactive-ion-etched gallium nitride: Metastable defects and yellow luminescence
1999
Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes
2010
Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells
2008
Two-dimensional electron system with extremely low disorder
1988 StandoutNobel
Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates
2017
Photoluminescence of AlxGa1−xAs alloys
1994
Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes
2012
High refractive index polymers: fundamental research and practical applications
2009
Band parameters for nitrogen-containing semiconductors
2003 Standout
Effective Thermal Management in Ultraviolet Light-Emitting Diodes With Micro-LED Arrays
2013
Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes
2011
Solid-State Light Sources Getting Smart
2005 StandoutScience
Radiative and nonradiative processes in strain-free AlxGa1−xN films studied by time-resolved photoluminescence and positron annihilation techniques
2004 StandoutNobel
Efficient and stable solution-processed planar perovskite solar cells via contact passivation
2017 StandoutScience
Impact of microstructure on local carrier lifetime in perovskite solar cells
2015 StandoutScience
Yellow luminescence depth profiling on GaN epifilms using reactive ion etching
1998
Progress and Prospect of the Growth of Wide-Band-Gap Group III Nitrides: Development of the Growth Method for Single-Crystal Bulk GaN
2013 StandoutNobel
Optical study of the electronic states ofIn 0.53 Ga 0.47 In 0.52 Al 0.48
1991
Vertically conducting deep-ultraviolet light-emitting diodes with interband tunneling junction grown on 6H-SiC substrate
2016
Efficiency of light emission in high aluminum content AlGaN quantum wells
2009
Ultraviolet light-emitting diodes based on group three nitrides
2008
Internal Quantum Efficiency and Nonradiative Recombination Rate in InGaN-Based Near-Ultraviolet Light-Emitting Diodes
2012
Combination of Indium–Tin Oxide and SiO2/AlN Dielectric Multilayer Reflective Electrodes for Ultraviolet-Light-Emitting Diodes
2013 StandoutNobel
Phase separation and gap bowing in zinc-blende InGaN, InAlN, BGaN, and BAlN alloy layers
2002
Photoluminescence Spectroscopy of Single CdSe Nanocrystallite Quantum Dots
1996 StandoutNobel
Time-resolved study of yellow and blue luminescence in Si- and Mg-doped GaN
2000
Works of E. Fred Schubert being referenced
An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: Preferential outcoupling of strong in-plane emission
2016
Selectively dopedn-AlxGa1?xAs/GaAs heterostructures with high-mobility two-dimensional electron gas for field effect transistors
1984
Temperature‐dependent light‐output characteristics of GaInN light‐emitting diodes with different dislocation densities
2011
Quantum size effect in δ-doped AlGaAs heterostructures
1988
Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes
2009
On the temperature dependence of electron leakage from the active region of GaInN/GaN light-emitting diodes
2011
Origin of efficiency droop in GaN-based light-emitting diodes
2007
Recombination dynamics in ultraviolet light-emitting diodes with Si-doped AlxGa1−xN∕AlyGa1−yN multiple quantum well active regions
2007
Effect of heterointerface polarization charges and well width upon capture and dwell time for electrons and holes above GaInN/GaN quantum wells
2010
The electrification of energy: Long-term trends and opportunities
2018
Improved performance of GaN-based blue light emitting diodes with InGaN/GaN multilayer barriers
2009
On resonant optical excitation and carrier escape in GaInN/GaN quantum wells
2009
Delta-doped ohmic contacts to n-GaAs
1986
Band gap bowing and refractive index spectra of polycrystalline AlxIn1−xN films deposited by sputtering
1997
Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities
2009
Improved mobilities and resistivities in modulation-doped p-type AlGaN/GaN superlattices
2001
Diffuse X-Ray scattering and compositional disorder in GaxIn1–xP
1977
Ga2O3 films for electronic and optoelectronic applications
1995
Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes
2011
Modification of GaAs/AlGaAs growth-interrupted interfaces through changes in ambient conditions during growth
1993
Overcoming the fundamental light-extraction efficiency limitations of deep ultraviolet light-emitting diodes by utilizing transverse-magnetic-dominant emission
2015
Competition between band gap and yellow luminescence in GaN and its relevance for optoelectronic devices
1996
Demonstration of efficient p-type doping in Al x Ga 1–x N/GaNsuperlattice structures
1999
Current crowding and optical saturation effects in GaInN/GaN light-emitting diodes grown on insulating substrates
2001
Influence of junction temperature on chromaticity and color-rendering properties of trichromatic white-light sources based on light-emitting diodes
2005
The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes
2009
Photoluminescence of GaAs quantum wells grown by molecular beam epitaxy with growth interruptions
1991
Current crowding in GaN/InGaN light emitting diodes on insulating substrates
2001
Transient and persistent photoconductivity in n-AlxGa1-xAs and selectively doped n-AlxGa1-xAs/GaAs heterostructures
1985
Optical properties of Si-doped GaN
1997
Promotion of hole injection enabled by GaInN/GaN light-emitting triodes and its effect on the efficiency droop
2011
Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes
2007
Experimental study of perpendicular transport in weakly coupled AlxGa1−xN/GaN superlattices
2003
Electron beam-induced increase of electron diffusion length in p-type GaN and AlGaN/GaN superlattices
2000
Enhancement of deep acceptor activation in semiconductors by superlattice doping
1996
Junction–temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method
2004
Crystallographic wet chemical etching of GaN
1998
Temperature dependent efficiency droop in GaInN light-emitting diodes with different current densities
2012
Quantum size effect in monolayer-doped heterostructures
1988
Arrays of Truncated Cone AlGaN Deep-Ultraviolet Light-Emitting Diodes Facilitating Efficient Outcoupling of in-Plane Emission
2016
Spatial distributions of near-band-gap uv and yellow emission on MOCVD grown GaN epifilms
1998
P-type conductivity in bulk AlxGa1−xN and AlxGa1−xN/AlyGa1−yN superlattices with average Al mole fraction >20%
2004
Alloy broadening in photoluminescence spectra ofAl x Ga 1 − x As
1984
Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop
2008
Solid-state lighting—a benevolent technology
2006
Efficiency droop in light‐emitting diodes: Challenges and countermeasures
2013
Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes
2010
Transport-mechanism analysis of the reverse leakage current in GaInN light-emitting diodes
2011
Experimental and theoretical study of acceptor activation and transport properties in p-type AlxGa1−xN/GaN superlattices
2000