E. Cicek

Cs2AgBiBr6 single-crystal X-ray detectors with a low detection limit

A review of Ga2O3 materials, processing, and devices

Highly narrowband perovskite single-crystal photodetectors enabled by surface-charge recombination

Sensitive X-ray detectors made of methylammonium lead tribromide perovskite single crystals

The emergence and prospects of deep-ultraviolet light-emitting diode technologies

Imperfections and their passivation in halide perovskite solar cells

Solar Blind Photodetectors Enabled by Nanotextured β-Ga2O3 Films Grown via Oxidation of GaAs Substrates

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

Room‐Temperature Fabricated Amorphous Ga₂O₃ High‐Response‐Speed Solar‐Blind Photodetector on Rigid and Flexible Substrates

Crack-free Si-doped n-AlGaN film grown on sapphire substrate with high-temperature AlN interlayer

High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector

Surface plasmon enhanced light emission from AlGaN-based ultraviolet light-emitting diodes grown on Si (111)

Crack-free AlGaN for solar-blind focal plane arrays through reduced area epitaxy

Al_xGa_1-xN-based back-illuminated solar-blind photodetectors with external quantum efficiency of 89%

Al_xGa_1−xN-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate

Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral epitaxial overgrowth of AlN on Si(111)