Citation Impact
Citing Papers
Fine Structure of the 3.42 eV Emission Band in GaN
1995
A GaN bulk crystal with improved structural quality grown by the ammonothermal method
2007 StandoutNobel
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
2006 StandoutNobel
Congruent melting of gallium nitride at 6 GPa and its application to single-crystal growth
2003 StandoutNobel
Similarity between the 0.88-eV photoluminescence in GaN and the electron-capture emission of theO P
1998 StandoutNobel
Growth and applications of Group III-nitrides
1998
Infrared luminescence of residual iron deep level acceptors in gallium nitride (GaN) epitaxial layers
1994 StandoutNobel
Carrier localization of as-grownn-type gallium nitride under large hydrostatic pressure
1996
Perspective On Gallium Nitride
1989
Absorption and emission spectra of neodymium(III) and europium(III) complexes
1984
Quantum ground state and single-phonon control of a mechanical resonator
2010 StandoutNatureNobel
Infrared lattice vibrations of GaN
1992
Strain relief and its effect on the properties of GaN using isoelectronic In doping grown by metalorganic vapor phase epitaxy
1999 StandoutNobel
Film/Substrate Orientation Relationship in theAIN / 6 H
1996 StandoutNobel
Growth of GaN by ECR-assisted MBE
1993
Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells
2013 StandoutNobel
A comparative study of GaN epilayers grown on sapphire and SiC substrates by plasma-assisted molecular-beam epitaxy
1993
Cleaning of AlN and GaN surfaces
1998 StandoutNobel
Paramagnetic resonance in GaN-based single quantum wells
1997 StandoutNobel
Some effects of oxygen impurities on AlN and GaN
2002
Electron-spin-resonance studies of donors in wurtzite GaN
1993
NK
1997 StandoutNobel
Atomic Layer Deposition: An Overview
2009 Standout
Structural and photophysical properties of europium(III) mixed complexes with β-diketonates and o-phenanthroline
1994
Study of defects in GaN grown by the two-flow metalorganic chemical vapor deposition technique using monoenergetic positron beams
2001 StandoutNobel
Cathodoluminescence studies of the deep level emission bands of AlxGa1−xN films deposited on 6H–SiC(0001)
1998 StandoutNobel
Photoluminescence of GaN: Effect of electron irradiation
1998 StandoutNobel
Probing Site Symmetry Around Eu 3+ in Nanocrystalline ThO 2 Using Time Resolved Emission Spectroscopy
2014
p-type zinc-blende GaN on GaAs substrates
1993
Orange luminescence from europium(III) compounds
1988
Structural Defects in GaN Epilayers Grown by Gas Source Molecular Beam Epitaxy
1989 StandoutNobel
Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon
1991
Zur Elektronenstruktur hochsymmetrischer Verbindungen der Lanthanoiden und Actinoiden—IX. Die Lumineszenz-Raman-Spektroskopie—ein Hilfsmittel bei der Lokalisierung der Energieniveaus von Verbindungen des Europiums(III)
1978
Phonon density of states of bulk gallium nitride
1998 StandoutNobel
Self-Assembly of Discrete Cyclic Nanostructures Mediated by Transition Metals
2000 Standout
Brillouin scattering study of bulk GaN
1999 StandoutNobel
Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer
2009 StandoutNobel
Laser lift-off technique for freestanding GaN substrate using an In droplet formed by thermal decomposition of GaInN and its application to light-emitting diodes
2014 StandoutNobel
Site-selective emission spectra of Eu3+:Ca5(PO4)3F
2000
Pressure-induced phase transition in SiC
1993 StandoutNobel
Properties of the yellow luminescence in undoped GaN epitaxial layers
1995 StandoutNobel
Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study
2000 StandoutNobel
Atomic layer epitaxy of III-V binary compounds
1985
Atomic Layer Epitaxy of Copper on Tantalum
1997
Near Defect Free GaN Substrates
1999
SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1−xN
2000
Evidence for localized Si-donor state and its metastable properties in AlGaN
1999 StandoutNobel
Improvements of the Optical and Electrical Properties of GaN Films by Using In-doping Method During Growth
1999
Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates
2001 StandoutNobel
Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101¯1¯) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
2010 StandoutNobel
Prospects for device implementation of wide band gap semiconductors
1992
Metal Schottky barrier contacts to alpha 6H-SiC
1992 StandoutNobel
Pressure Induced Deep Gap State of Oxygen in GaN
1997
The charge-transfer contribution to the intensity of hypersensitive trivalent lanthanide transitions
1977
Ultrathin Organic Films Grown by Organic Molecular Beam Deposition and Related Techniques
1997 Standout
Divalent transition metal β-keto-enolate complexes as lewis acids
1969
Deposition of highly resistive, undoped, and p-type, magnesium-doped gallium nitride films by modified gas source molecular beam epitaxy
1993 StandoutNobel
Intrinsic exciton transitions in GaN
1998 StandoutNobel
Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation
2009 StandoutNobel
Interpretation of europium(III) spectra
2015 Standout
Fine structure of near-band-edge photoluminescence in He+-irradiated GaN grown on SiC
1998 StandoutNobel
Luminescence properties of lanthanide complexes incorporated into sol-gel derived inorganic-organic composite materials
1998
Morphology of organometallic CVD grown GaAs epitaxial layers
1983
Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition
2009
The effects of hydration on the luminescence spectra of trisodium tris(2,6-pyridinedicarboxylato)europium(III) compounds
1990
Thermodynamical Analyses and Luminescence Properties of Vapor-Grown ZnSxSe1-x
1987 StandoutNobel
The influence of oxygen on the electrical and optical properties of GaN crystals grown by metalorganic vapor phase epitaxy
1992
Strain effects on excitonic transitions in GaN: Deformation potentials
1996 StandoutNobel
Optically detected magnetic resonance of GaN films grown by organometallic chemical-vapor deposition
1995
Lanthanide complexes—VI. Complexes of yttrium and lanthanide thiocyanates, chlorides, nitrates and salicylates with 1,2-bis(pyridine-α-aldimino)ethane
1969
Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates
2010 StandoutNobel
The polarization field dependence of Ti/Al based Ohmic contacts on N-type semipolar GaN
2012 StandoutNobel
Relation between Al vacancies and deep emission bands in AlN epitaxial films grown by NH3-source molecular beam epitaxy
2007 StandoutNobel
Thermoelectric properties of lattice matched InAlN on semi-insulating GaN templates
2012 StandoutNobel
Lanthanide-Based Luminescent Hybrid Materials
2009 Standout
Recombination processes in InxGa1−xN light-emitting diodes studied through optically detected magnetic resonance
1998 StandoutNobel
Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction
1998 StandoutNobel
p-type conduction in Mg-doped GaN and Al0.08Ga0.92N grown by metalorganic vapor phase epitaxy
1994 StandoutNobel
A Comparative Study of GaN Films Grown on Different Faces of Sapphire by ECR-Assisted MBE
1992
Correlation of vibrational modes and DX-like centers in GaN:O
1999 Nobel
Spectroscopic studies ofEu 3 + Dy 3 + ThO 2
2000
High temperature thermoelectric properties of optimized InGaN
2011 StandoutNobel
Deep level defects in n-type GaN
1994 StandoutNobel
Structure and absorption and fluorescence spectra of Eu(PyNO)8(C104)3
1989
Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition
2002
Growth of GaN Single Crystals under High Nitrogen Pressures and their Characterization
1999
Epitaxial growth and characterization of zinc-blende gallium nitride on (001) silicon
1992
First-principles calculations for defects and impurities: Applications to III-nitrides
2004 Standout
Radiative and nonradiative processes in strain-free AlxGa1−xN films studied by time-resolved photoluminescence and positron annihilation techniques
2004 StandoutNobel
Emission spectra of cesium sodium europium chloride (Cs2NaEuCl6) and cesium sodium europium yttrium chloride (Cs2Na(Eu,Y)Cl6)
1976
Theory of Point Defects and Interfaces
1996
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
2000 StandoutNobel
Localized vibrational modes in GaN:O tracing the formation of oxygenDX
2000 StandoutNobel
Luminescence properties of lanthanide complexes and their silica-based composites
1998
Works of E. Butter being referenced
Komplexe einiger Seltenerd(III)‐Ionen mit der SCHIFF schen Base N,N′‐Bis‐(pyridin‐2‐al) äthylendiimin und deren Fluoreszenzverhalten
1966
The deposition of group III nitrides on silicon substrates
1979
Röntgenkristallographische Daten von Addukten einiger Tris (β‐diketonato)‐europium(III)‐chelate
1968
Beziehungen zwischen Lumineszenzspektrum und Struktur von Seltenerdkomplexen. II. Oktaedrisch koordinierte Hexahalogenokomplexe des Europium(III)
1971
On the origin of free carriers in high‐conducting n‐GaN
1983
Analysis of the fluorescence spectra of europium(III)-bis-phenanthroline-tris-carboxylate complexes
1969
Zur Struktur der Nickel(II)‐β‐diketonate
1965
Organometallic Vapour Phase Epitaxy of Galliumnitride Using Ga(CH3)3 · N(CH3)3‐Adduct Pyrolysis
1986
A quantum chemical study of chlorine desorption by hydrogen in the VPE of GaAs
1984
Beziehungen zwischen Lumineszenzspektrum und Struktur von Seltenerdkomplexen. I. Quadratisch‐antiprismatisch koordinierte Pyridin‐N‐Oxid‐Komplexe des Europium(III)
1969
Carrier Concentration Profile of GaN Layers bei Using Additional Dried NH3
1986
Ligandenfeldaufspaltung im Bis(a‐phenanthrolin)‐europium (III)‐nitrat
1966
Lumineszuntersuchungen an Europium‐Chelaten mit achtfacher Koordination. III. Eu‐Komplexe mit o‐Phenanthrolin und α,α′‐Dipyridyl, Symmetrie und Struktur
1968
Epitaxial Deposition of GaAs in the Ga (CH3)3AsH3H2‐System (IV) Thermodynamic and Kinetic Considerations
1974
Study on the growth rate in VPE of GaN
1981
A simple method for calculation of the composition of VPE grown GaxIn1−xAs layers as a function of growth parameters
1984