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Citing Papers
A GaN bulk crystal with improved structural quality grown by the ammonothermal method
2007 StandoutNobel
Handheld deep ultraviolet emission device based on aluminum nitride quantum wells and graphene nanoneedle field emitters
2012 StandoutNobel
Raman scattering from phonon-polaritons in GaN
2000 StandoutNobel
Growth and applications of Group III-nitrides
1998
Misfit strain relaxation in m-plane epitaxy of InGaN on ZnO
2010 StandoutNobel
Effect of Controlled Growth Dynamics on the Microstructure of Nonpolar a-Plane GaN Revealed by X-ray Diffraction
2009
Structural and vibrational properties of GaN
1999 StandoutNobel
Chemical bond analysis of the second-order nonlinear optical behaviour of Mg-doped lithium niobate
2000
Refractive index study of AlxGa1−xN films grown on sapphire substrates
2003
High-power blue-violet AlGaN-cladding-free m-plane InGaN/GaN laser diodes
2011 StandoutNobel
Defect characterization in epitaxial ZnO/epi-GaN/Al2O3 heterostructures: transmission electron microscopy and triple-axis X-ray diffractometry
2000
Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures
2002
Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures
2003
Electrical properties of strained AlN/GaN superlattices on GaN grown by metalorganic vapor phase epitaxy
2002 StandoutNobel
Quantum ground state and single-phonon control of a mechanical resonator
2010 StandoutNatureNobel
Compositionally Dependent Band Offsets In Aln/AlxGa1-xN Heterojunctions Measured By Using X-Ray Photoelectron Spectroscopy
1997
Low extended defect density nonpolar m-plane GaN by sidewall lateral epitaxial overgrowth
2008 StandoutNobel
First-principles calculation of the piezoelectric tensor d⇊ of III–V nitrides
2002
Localized exciton dynamics in nonpolar (112¯) InxGa1−xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth
2005 StandoutNobel
Non-polar m-plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors
2013 StandoutNobel
Removal of thick (>100nm) InGaN layers for optical devices using band-gap-selective photoelectrochemical etching
2004 StandoutNobel
A comprehensive review of ZnO materials and devices
2005 Standout
Determination of exciton transition energy and bowing parameter of AlGaN alloys in AlGaN/GaN heterostructure by means of reflectance measurement
2001
Optical investigations of AlGaN on GaN epitaxial films
1999 StandoutNobel
ZnO epitaxial layers grown on c-sapphire substrate with MgO buffer by plasma-assisted molecular beam epitaxy (P-MBE)
2005
Structural characterization of nonpolar (1120) a-plane GaN thin films grown on (1102) r-plane sapphire
2002
Blue and aquamarine stress-relaxed semipolar (112¯2) laser diodes
2013 StandoutNobel
Comprehensive characterization of hydride VPE grown GaN layers and templates
2001
Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy
2006 StandoutNobel
Surface potential effect on excitons in AlGaN/GaN quantum well structures
2013 StandoutNobel
The Dependence of the Band Gap on Alloy Composition in Strained AlGaN on GaN
1998 StandoutNobel
Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes
2010 StandoutNobel
Growth of epitaxial AlxGa1−xN films by pulsed laser deposition
1998
Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth
2004 StandoutNobel
Observation of non-basal slip in semipolar InxGa1-xN/GaN heterostructures
2011 StandoutNobel
Influence of polarity on carrier transport in semipolar (2021¯) and (202¯1) multiple-quantum-well light-emitting diodes
2012 StandoutNobel
Role of nonradiative recombination centers and extended defects in nonpolar GaN on light emission efficiency
2011 StandoutNobel
Anisotropic strain and phonon deformation potentials in GaN
2007 StandoutNobel
III–nitrides: Growth, characterization, and properties
2000
Dependence of the fundamental band gap of AlxGa1−xN on alloy composition and pressure
1999
Simulation of visible and ultra-violet group-III nitride light emitting diodes
2005
Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers
2012 StandoutNobel
Suppression of m-plane and c-plane slip through Si and Mg doping in partially relaxed (202¯1) InGaN/GaN heterostructures
2012 StandoutNobel
Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101¯1¯) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
2010 StandoutNobel
Growth of M-plane GaN films on γ-LiAlO2(100) with high phase purity
2003
Defect-mediated surface morphology of nonpolar m-plane GaN
2007 StandoutNobel
Near-field investigation of spatial variations of (202¯1¯) InGaN quantum well emission spectra
2013 StandoutNobel
Calculation of electric field and optical transitions in InGaN∕GaN quantum wells
2005
Indium incorporation above 800 °C during metalorganic vapor phase epitaxy of InGaN
1999
Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers
2001
Defect reduction in (11¯00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy
2005 StandoutNobel
Spectroscopic ellipsometry measurements of Al Ga1−N in the energy range 3–25 eV
1998
Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN
2005 StandoutNobel
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
2000
Optical-field calculations for lossy multiple-layer AlxGa1−xN/InxGa1−xN laser diodes
1998
Al x Ga 1−x N/GaN band offsets determined by deep-level emission
2001
Recent Developments in the Methods and Applications of the Bond Valence Model
2009 Standout
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
1999 Standout
Suppression of relaxation in (202¯1) InGaN/GaN laser diodes using limited area epitaxy
2012 StandoutNobel
Energy band bowing parameter in AlxGa1−xN alloys
2002
Temperature dependence of excitonic recombination in lateral epitaxially overgrown InGaN/GaN quantum wells studied with cathodoluminescence
2004
Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN
1999 StandoutNobel
Strain-induced polarization in wurtzite III-nitride semipolar layers
2006 StandoutNobel
Phonon mode behavior in strained wurtziteAl N ∕ Ga N
2005 StandoutNobel
Spontaneous and piezoelectric polarization effects in III–V nitride heterostructures
1999
Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes
2013 StandoutNobel
Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers
2006 StandoutNobel
Properties of strained wurtzite GaN and AlN:Ab initiostudies
2002
Structural and morphological characteristics of planar (1120) a-plane gallium nitride grown by hydride vapor phase epitaxy
2003 StandoutNobel
Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures
2002
Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission
2012 StandoutNobel
Trace analysis of non-basal plane misfit stress relaxation in (202¯1) and (303¯1¯) semipolar InGaN/GaN heterostructures
2012 StandoutNobel
Polarization charges and polarization-induced barriers in AlxGa1−xN/GaN and InyGa1−yN/GaN heterostructures
2001 StandoutNobel
Photoreflectance spectra of excitonic polaritons in GaN substrate prepared by lateral epitaxial overgrowth
2000 StandoutNobel
Determination of Composition and Lattice Relaxation in Semipolar Ternary (In,Al,Ga)N Strained Layers from Symmetric X-ray Diffraction Measurements
2011
Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯2) semipolar versus (0001) polar planes
2014 StandoutNobel
Photoluminescence from highly excited AlN epitaxial layers
2008 StandoutNobel
384 nm laser diode grown on a (202¯1) semipolar relaxed AlGaN buffer layer
2012 StandoutNobel
Band parameters for nitrogen-containing semiconductors
2003 Standout
m -plane pure blue laser diodes with p-GaN/n-AlGaN-based asymmetric cladding and InGaN-based wave-guiding layers
2009 StandoutNobel
Observation of nitrogen vacancy in proton-irradiated AlxGa1−xN
2001
The role of high-temperature island coalescence in the development of stresses in GaN films
2001
Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
2004 StandoutNobel
The band-gap bowing of AlxGa1−xN alloys
1999
Correlation between biaxial stress and free exciton transition in AlN epilayers
2007
Works of E. Born being referenced
Cation substitution models of congruent LiNbO3 investigated by X-ray and neutron powder diffraction
1994
Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1−xN films
1997
X‐ray diffraction study of gallium nitride grown by MOCVD
1996
Sound velocity of AlxGa1−xN thin films obtained by surface acoustic-wave measurements
1998
Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry
1998