Citation Impact
Citing Papers
Terahertz spectroscopy and imaging – Modern techniques and applications
2010 Standout
Epitaxial core–shell and core–multishell nanowire heterostructures
2002 StandoutNature
Two-dimensional flexible nanoelectronics
2014 Standout
Electronics based on two-dimensional materials
2014 Standout
Attosecond nonlinear polarization and light–matter energy transfer in solids
2016 StandoutNatureNobel
The Larger Acenes: Versatile Organic Semiconductors
2007 Standout
Optical-field-induced current in dielectrics
2012 StandoutNatureNobel
Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
2011 Standout
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
2004 StandoutNature
Prospects of Colloidal Nanocrystals for Electronic and Optoelectronic Applications
2009 Standout
Physics of high-power InGaN/GaN lasers
2002 StandoutNobel
Numerical analysis of short-circuit safe operating area for p-channel and n-channel IGBTs
1991
Transient photoconductivity in GaAs as measured by time-resolved terahertz spectroscopy
2000
CMOS Low-Noise Amplifier Design Optimization Techniques
2004 Standout
Attosecond metrology: from electron capture to future signal processing
2014 StandoutNobel
On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration
1994 Standout
Basic mechanisms and modeling of single-event upset in digital microelectronics
2003 Standout
Molecular Electronics with Carbon Nanotubes
2002 Standout
Intriguing Optoelectronic Properties of Metal Halide Perovskites
2016 Standout
Power-Up SRAM State as an Identifying Fingerprint and Source of True Random Numbers
2008 Standout
Point defects and dopant diffusion in silicon
1989 Standout
Surface photovoltage phenomena: theory, experiment, and applications
1999 Standout
On phosphorus diffusion in silicon under oxidizing atmospheres
1973
A comprehensive model for inversion layer hole mobility for simulation of submicrometer MOSFET's
1991
Top-down fabrication of single crystal silicon nanowire using optical lithography
2012
An Integral Charge Control Model of Bipolar Transistors
1970
Bipolar transistor design for optimized power-delay logic circuits
1979
Leakage current mechanisms and leakage reduction techniques in deep-submicrometer CMOS circuits
2003 Standout
Selected failure mechanisms of modern power modules
2002 Standout
Effect of emitter contact on current gain of silicon bipolar devices
1980
The effect of high fields on MOS device and circuit performance
1984
Semiconductor Material and Device Characterization
2005 Standout
Analysis of kink characteristics in Silicon-on-insulator MOSFET's using two-carrier modeling
1985
Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon
1983
A new model for thermal channel noise of deep-submicron MOSFETs and its application in RF-CMOS design
2001
Determining 4H silicon carbide electronic properties through combined use of device simulation and metal–semiconductor field-effect-transistor terminal characteristics
1998
Optical-field-induced current in dielectrics
2013 StandoutNobel
Charge Funneling in N- and P-Type Si Substrates
1982
Strong-field and attosecond physics in solids
2014 StandoutNobel
Flash memory cells-an overview
1997
Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature
1975
Three-dimensional simulation of charge collection and multiple-bit upset in Si devices
1994
Fully automatic apparatus for the determination of doping profiles in Si by electrical measurements and anodic stripping
1983
Organic Thin Film Transistors for Large Area Electronics
2002 Standout
MOS device modeling at 77 K
1989
Analysis of ac Surface Photovoltages in a Depleted Oxidized p-Type Silicon Wafer
1986
Electromigration in metals
1989 Standout
A unified mobility model for device simulation—I. Model equations and concentration dependence
1992
Colloquium: Strong-field phenomena in periodic systems
2018 StandoutNobel
Two integral relations pertaining to the electron transport through a bipolar transistor with a nonuniform energy gap in the base region
1985 StandoutNobel
Empirical low-field mobility model for III–V compounds applicable in device simulation codes
2000
Elementary scattering theory of the Si MOSFET
1997
Finite-Element Analysis of Semiconductor Devices: The FIELDAY Program
1981
A review of nuclear batteries
2014 Standout
Simulation of nanoscale MOSFETs using modified drift-diffusion and hydrodynamic models and comparison with Monte Carlo results
2005
Fundamentals of Modern VLSI Devices
2009 Standout
Model for CMOS/SOI single-event vulnerability
1989
Past achievements and future challenges in the development of optically transparent electrodes
2012 Standout
Investigation of blue InGaN light-emitting diodes with step-like quantum well
2011
The evolution of the MINIMOS mobility model
1990
Influence of impact ionization on the drain conductance in InAs-AlSb quantum well heterostructure field-effect transistors
1995 StandoutNobel
Heavy doping effects in p-n-p bipolar transistors
1980
Polymer/carbon based composites as electromagnetic interference (EMI) shielding materials
2013 Standout
Electronic properties of two-dimensional systems
1982 Standout
A simple optimisation procedure for bipolar subnanosecond ICs with low power dissipation
1982
Works of D.M. Caughey being referenced
Characterization of silicon-on-sapphire IGFET transistors
1977
Carrier mobilities in silicon empirically related to doping and field
1967 Standout
Computer simulation of u.h.f.-transistor small-signal behaviour at high frequencies
1969