Standout Papers
Citation Impact
Citing Papers
2D transition metal dichalcogenides
2017 Standout
Photodetectors based on graphene, other two-dimensional materials and hybrid systems
2014 Standout
Measurement of bound states in the continuum by a detector embedded in a photonic crystal
2016
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Α 10-gigawatt attosecond source for non-linear XUV optics and XUV-pump-XUV-probe studies
2020 StandoutNobel
Optical signatures of dopants in GaN
2006 StandoutNobel
2D materials and van der Waals heterostructures
2016 StandoutScienceNobel
Conduction and valence band offsets of LaAl2O3 with (−201) β-Ga2O3
2017
Luminescence of Acceptors in Mg-Doped GaN
2013 StandoutNobel
Ge-Doped ${\beta }$ -Ga2O3 MOSFETs
2017
Epitaxial structure and electronic property of β-Ga2O3 films grown on MgO (100) substrates by pulsed-laser deposition
2017
A review of Ga2O3 materials, processing, and devices
2018 Standout
Luminescence properties of defects in GaN
2005 Standout
$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation
2017
Review—Ionizing Radiation Damage Effects on GaN Devices
2015
Band alignment of Al2O3 with (−201) β-Ga2O3
2017
1.5 MeV electron irradiation damage in β-Ga2O3 vertical rectifiers
2017
High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3
2017
2D metal carbides and nitrides (MXenes) for energy storage
2017 Standout
Epitaxial growth of α-Ga2O3 thin films on a-, m-, and r-plane sapphire substrates by mist chemical vapor deposition using α-Fe2O3 buffer layers
2017
Luminescence related to high density of Mg-induced stacking faults in homoepitaxially grown GaN
2011 StandoutNobel
State-of-the-art technologies of gallium oxide power devices
2017
Enhancement-mode Ga2O3 MOSFETs with Si-ion-implanted source and drain
2017
Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition
2017
Inductively coupled plasma etch damage in (-201) Ga2O3 Schottky diodes
2017
Temperature-Dependent Characteristics of Ni/Au and Pt/Au Schottky Diodes on β-Ga2O3
2017
Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition
2009 StandoutNobel
Communication—Electrical Characterization of β-Ga2O3Single Crystal Substrates
2017
Band alignment of atomic layer deposited SiO2and HfSiO4with $(\bar{2}01)$ β-Ga2O3
2017
Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga2O3, and diamond
2017
Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique
2014 StandoutNobel
Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au
2017
Low-Temperature Bonded GaN-on-Diamond HEMTs With 11 W/mm Output Power at 10 GHz
2015
Bound states in the continuum
2016 Standout
Perspective—Opportunities and Future Directions for Ga2O3
2017
Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy
2017
Effects of low energy e‐beam irradiation on cathodoluminescence from GaN
2012 StandoutNobel
Properties of the main Mg-related acceptors in GaN from optical and structural studies
2014 StandoutNobel
Ga2O3MOSFETs Using Spin-On-Glass Source/Drain Doping Technology
2017
High Breakdown Voltage (−201) $\beta $ -Ga2O3 Schottky Rectifiers
2017
Anisotropic thermal conductivity of β-Ga2O3 at elevated temperatures: Effect of Sn and Fe dopants
2017
Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101¯1¯) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
2010 StandoutNobel
Individual Roles of Atoms and Ions during Hydrogen Plasma Passivation of Surface Defects on GaN Created by Plasma Etching
2012 StandoutNobel
Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films
2009 StandoutNobel
Delta-doped β-gallium oxide field-effect transistor
2017
Temperature dependent quasi-static capacitance-voltage characterization of SiO2/β-Ga2O3 interface on different crystal orientations
2017
Annealing of dry etch damage in metallized and bare (-201) Ga2O3
2017
Applications of Phosphorene and Black Phosphorus in Energy Conversion and Storage Devices
2017
High bandwidth and responsivity mid-infrared graphene photodetector based on a modified metal–dielectric–graphene architecture
2019
Thermionic Emission Analysis of TiN and Pt Schottky Contacts to β-Ga2O3
2017
Applications of 2D MXenes in energy conversion and storage systems
2018 Standout
Oxygen related shallow acceptor in GaN
2004 StandoutNobel
Inductively coupled plasma etching of bulk, single-crystal Ga2O3
2017
Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region
2014 StandoutNobel
Band offsets in ITO/Ga2O3 heterostructures
2017
Quasi-Two-Dimensional h-BN/β-Ga2O3 Heterostructure Metal–Insulator–Semiconductor Field-Effect Transistor
2017
Preparation of 2-in.-diameter (001) β-Ga2O3homoepitaxial wafers by halide vapor phase epitaxy
2017
Valence and conduction band offsets in AZO/Ga2O3 heterostructures
2017
Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides
2016 Standout
Nature of yellow luminescence band in GaN grown on Si substrate
2014 StandoutNobel
Dominant shallow acceptor enhanced by oxygen doping in GaN
2006 StandoutNobel
High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge
2017
Dissociation of H-related defect complexes in Mg-doped GaN
2004
Reduced Self-Heating in AlGaN/GaN HEMTs Using Nanocrystalline Diamond Heat-Spreading Films
2011
Simulation of Radiation Effects in AlGaN/GaN HEMTs
2015
Works of Dennis E. Walker being referenced
Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors
2013
Full-Wafer Characterization of AlGaN/GaN HEMTs on Free-Standing CVD Diamond Substrates
2009
Probing phonon and electrical anisotropy in black phosphorus for device alignment
2016
Simultaneous observation of luminescence and dissociation processes of Mg–H complex for Mg-doped GaN
2002 StandoutNobel
Enhanced photodetection in graphene-integrated photonic crystal cavity
2013
Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage
2016