Citation Impact
Citing Papers
Strain relief by In-doping and its effect on the surface and on the interface structures in (Al)GaN on sapphire grown by metalorganic vapor-phase epitaxy
2000 StandoutNobel
Alternative Plasmonic Materials: Beyond Gold and Silver
2013 Standout
Luminescent metal–organic frameworks
2009 Standout
Tuning upconversion through energy migration in core–shell nanoparticles
2011 Standout
Thermometry at the nanoscale
2012 Standout
Heteroepitaxial Lateral Overgrowth of GaN on Periodically Grooved Substrates: A New Approach for Growing Low-Dislocation-Density GaN Single Crystals
2001 StandoutNobel
Control of strain in GaN using an In doping-induced hardening effect
2001 StandoutNobel
Effect of LED lighting on the cooling and heating loads in office buildings
2013 Standout
Solid-state lighting: failure analysis of white LEDs
2004
Strain relief and its effect on the properties of GaN using isoelectronic In doping grown by metalorganic vapor phase epitaxy
1999 StandoutNobel
Basic mechanisms and modeling of single-event upset in digital microelectronics
2003 Standout
Low extended defect density nonpolar m-plane GaN by sidewall lateral epitaxial overgrowth
2008 StandoutNobel
The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metalorganic Vapor Phase Epitaxy
2000 StandoutNobel
Systematic analysis and control of low-temperature GaN buffer layers on sapphire substrates
2003 StandoutNobel
Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN
1998 StandoutNobel
Low-dislocation-density GaN and AlxGa1−xN (x⩽0.13) grown on grooved substrates
2002 StandoutNobel
On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect
1998 StandoutNobel
Metal–organic frameworks for artificial photosynthesis and photocatalysis
2014 Standout
Metal–Organic Framework Materials as Chemical Sensors
2011 Standout
LED Driver With Self-Adaptive Drive Voltage
2008 Standout
Realization of crack-free and high-quality thick Al Ga1−N for UV optoelectronics using low-temperature interlayer
2000 StandoutNobel
In-plane GaN/AlGaN heterostructure fabricated by selective mass transport planar technology
2002 StandoutNobel
Dislocation generation in GaN heteroepitaxy
1998
Nitride semiconductors—impact on the future world
2002 StandoutNobel
Microscopic Investigation of Al0.43Ga0.57N on Sapphire
1999 StandoutNobel
Single-event upset and snapback in silicon-on-insulator devices and integrated circuits
2000
Mass transport and the reduction of threading dislocation in GaN
2000 StandoutNobel
Hybrid Organic−Inorganic Polyoxometalate Compounds: From Structural Diversity to Applications
2010 Standout
Luminescent Functional Metal–Organic Frameworks
2011 Standout
Optical characterization of wide bandgap semiconductors
2000 StandoutNobel
Low-Intensity Ultraviolet Photodetectors Based on AlGaN
1999 StandoutNobel
Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode
2006 StandoutNobel
Phosphors in phosphor-converted white light-emitting diodes: Recent advances in materials, techniques and properties
2010 Standout
Progress in crystal growth and future prospects of group III nitrides by metalorganic vapor-phase epitaxy
1998 StandoutNobel
MEMS reliability from a failure mechanisms perspective
2003
Critical issues in Al Ga1−N growth
2002 StandoutNobel
Effect on GaN/Al0.17Ga0.83N and Al0.05Ga0.95N/Al0.17Ga0.83N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor Phase Epitaxy
2000 StandoutNobel
Aging Mechanisms of InGaN/AlGaN/GaN Light-Emitting Diodes Operating at High Currents
1998
Interpretation of europium(III) spectra
2015 Standout
Thermography techniques for integrated circuits and semiconductor devices
2007
Progress in crystal growth of nitride semiconductors
2000 StandoutNobel
Lanthanide-Based Luminescent Hybrid Materials
2009 Standout
Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure
2001 StandoutNobel
Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates
2006 StandoutNobel
InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy with mass transport
2000 StandoutNobel
Mass Transport, Faceting and Behavior of Dislocations in GaN
2000 StandoutNobel
Light emitting diodes reliability review
2011
Growth of low-defect-density nonpolar a-plane GaN on r-plane sapphire using pulse NH_3 interrupted etching
2014 StandoutNobel
Renaissance and progress in crystal growth of nitride semiconductors
1999 StandoutNobel
Reduction of threading dislocation density in AlXGa1−XN grown on periodically grooved substrates
2002 StandoutNobel
Key inventions in the history of nitride-based blue LED and LD
2007 StandoutNobel
III–V Nitrides: A New Age for Optoelectronics
2003
Life of LED-Based White Light Sources
2005 Standout
Stress and Defect Control in GaN Using Low Temperature Interlayers
1998 StandoutNobel
The evolution of group III nitride semiconductors
2000 StandoutNobel
Photoresponse and Defect Levels of AlGaN/GaN Heterobipolar Phototransistor Grown on Low-Temperature AlN Interlayer
2001 StandoutNobel
Works of Daniel L. Barton being referenced
Failure Analysis for Micro-Electrical-Mechanical Systems (MEMS)
1997
AlGaN/InGaN/GaN blue light emitting diode degradation under pulsed current stress
1996
Fluorescent microthermal imaging — Theory and methodology for achieving high thermal resolution images
1996
Life tests and failure mechanisms of GaN/AlGaN/InGaN light-emitting diodes
1998
Infrared Light Emission From Semiconductor Devices
1996
Light Emission Spectral Analysis: The Connection Between the Electric Field and the Spectrum
1999
Single-quantum well InGaN green light emitting diode degradation under high electrical stress
1999
<title>Life testing and failure analysis of GaN/AlGaN/InGaN light-emitting diodes</title>
1997