Citation Impact
Citing Papers
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Antiferromagnetic spintronics
2016 Standout
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
2006 StandoutNobel
Improved p-type conductivity in Al-rich AlGaN using multidimensional Mg-doped superlattices
2016
Atom probe tomography study of Mg-doped GaN layers
2014 StandoutNobel
Entropy-Driven Stabilization of a Novel Configuration for Acceptor-Hydrogen Complexes in GaN
2001
Optical signatures of dopants in GaN
2006 StandoutNobel
Fundamentals of zinc oxide as a semiconductor
2009 Standout
Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching
2014 StandoutNobel
Transition-metal impurities in semiconductors and heterojunction band lineups
1988
EXAFS and XRD investigation of crystal structure in Cr doped YMn2 deuterides
2011
Native point defects in ZnO
2007 Standout
Passivation and Doping due to Hydrogen in III-Nitrides
2001
Infrared absorption of the hydrogen donor in rutile TiO2
2011
First-principles calculations for point defects in solids
2014 Standout
Role of open volume defects in Mg-doped GaN films studied by positron annihilation spectroscopy
2005
Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques
2005 StandoutNobel
Silicon implantation in epitaxial GaN layers: Encapsulant annealing and electrical properties
2004
Theoretical description of H behavior in GaN p-n junctions
2001
A review of Ga2O3 materials, processing, and devices
2018 Standout
Luminescence properties of defects in GaN
2005 Standout
Impact of Point Defects on the Luminescence Properties of (Al,Ga)N
2008 StandoutNobel
Vacancy defects in bulk ammonothermal GaN crystals
2010
Calculated properties of point defects in Be-doped GaN
2003
Correlation between Optical Polarization and Luminescence Morphology of (11\bar22)-Oriented InGaN/GaN Quantum-Well Structures
2009 StandoutNobel
Luminescence related to high density of Mg-induced stacking faults in homoepitaxially grown GaN
2011 StandoutNobel
Local vibrational modes and compensation effects in Mg‐doped GaN
2003
Optical properties of nonpolar -plane GaN layers
2006 StandoutNobel
Electron-beam dissociation of the MgH complex in p-type GaN
2002
Characterization of bulk AlN crystals with positron annihilation spectroscopy
2008
GaN-Based RF Power Devices and Amplifiers
2008 Standout
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
2019 StandoutNobel
Study of defects in GaN grown by the two-flow metalorganic chemical vapor deposition technique using monoenergetic positron beams
2001 StandoutNobel
Wet etching of GaN, AlN, and SiC: a review
2005
Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition
2009 StandoutNobel
Correlation between the violet luminescence intensity and defect density in AlN epilayers grown by ammonia‐source molecular beam epitaxy
2008 StandoutNobel
Electronic and vibrational properties of Mg- and O-related complexes in GaN
2001
Conduction electrons in GaAs: Five-levelk⋅ptheory and polaron effects
1990
Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique
2014 StandoutNobel
Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth
2004 StandoutNobel
Dilute ferromagnetic semiconductors: Physics and spintronic structures
2014
Identification of hydrogen configurations inp-type GaN through first-principles calculations of vibrational frequencies
2003
Prismatic stacking faults in epitaxially laterally overgrown GaN
2006
Effects of low energy e‐beam irradiation on cathodoluminescence from GaN
2012 StandoutNobel
Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques
2007 StandoutNobel
Mg-hydrogen interaction in AlGaN alloys
2012
Properties of the main Mg-related acceptors in GaN from optical and structural studies
2014 StandoutNobel
Simultaneous observation of luminescence and dissociation processes of Mg–H complex for Mg-doped GaN
2002 StandoutNobel
Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101¯1¯) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
2010 StandoutNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Individual Roles of Atoms and Ions during Hydrogen Plasma Passivation of Surface Defects on GaN Created by Plasma Etching
2012 StandoutNobel
Surface morphology study of basic ammonothermal GaN grown on non-polar GaN seed crystals of varying surface orientations from m-plane to a-plane
2013 StandoutNobel
Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films
2009 StandoutNobel
Different character of the donor-acceptor pair-related 3.27 eV band and blue photoluminescence in Mg-doped GaN. Hydrostatic pressure studies
2000
Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation
2009 StandoutNobel
Relation between Al vacancies and deep emission bands in AlN epitaxial films grown by NH3-source molecular beam epitaxy
2007 StandoutNobel
VASPKIT: A user-friendly interface facilitating high-throughput computing and analysis using VASP code
2021 Standout
Gallium nitride materials - progress, status, and potential roadblocks
2002 StandoutNobel
Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region
2014 StandoutNobel
Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates
2007 StandoutNobel
Isotope effects on the rate of electron-beam dissociation of Mg–H complexes in GaN
2002
Optical properties of InN with stoichoimetry violation and indium clustering
2005 StandoutNobel
Photoelectrochemical etching of p-type GaN heterostructures
2009 StandoutNobel
Equilibrium state of hydrogen in gallium nitride: Theory and experiment
2000
First-principles calculations for defects and impurities: Applications to III-nitrides
2004 Standout
Nature of yellow luminescence band in GaN grown on Si substrate
2014 StandoutNobel
Magnetocaloric effect: From materials research to refrigeration devices
2017 Standout
Radiative and nonradiative processes in strain-free AlxGa1−xN films studied by time-resolved photoluminescence and positron annihilation techniques
2004 StandoutNobel
Dominant shallow acceptor enhanced by oxygen doping in GaN
2006 StandoutNobel
Atomic structure of pyramidal defects in Mg-doped GaN
2003
Works of D. Wasik being referenced
The source of room temperature ferromagnetism in granular GaMnAs layers with zinc blende clusters
2010
1986
Shallow donors in magnetic fields in zinc-blende semiconductors. III. Subtleties of the conduction band and spin doublets in GaAs
1988
Infrared spectroscopy of Mg-H local vibrational mode in GaN with polarized light
2000
Temperature dependence of electrical properties of gallium-nitride bulk single crystals doped with Mg and their evolution with annealing
2001
Electrical Properties of GaN Bulk Single Crystals Doped with Mg
1999
On the Way to the Investigation of Hydrogen in GaN: Hydrogen in Nitrogen Doped GaP and GaAs
1997
Polarity dependent properties of GaN layers grown by hydride vapor phase epitaxy on GaN bulk crystals
2003
Hydrostatic pressure study of the paramagnetic-ferromagnetic phase transition in (Ga,Mn)As
2010