Citation Impact
Citing Papers
Direct Light‐Driven Modulation of Luminescence from Mn‐Doped ZnSe Quantum Dots
2008 StandoutNobel
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
2012 Standout
Thin films and devices of diamond, silicon carbide and gallium nitride
1993 StandoutNobel
Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime
1997 StandoutNobel
X-ray photoelectron diffraction from (3×3) and (√3×√3)R 30° (0001)Si 6H–SiC surfaces
1998 StandoutNobel
Real-space description of semiconducting band gaps in substitutional systems
1991
High-brightness InGaN/AlGaN double-heterostructure blue-green-light-emitting diodes
1994 StandoutNobel
Blue LEDs, UV photodiodes and high-temperature rectifiers in 6H-SiC
1993
Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours
1997 StandoutNobel
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
2013 StandoutNobel
Hall measurements as a function of temperature on monocrystalline SiC thin films
1990 StandoutNobel
Determination of ionization energies of the nitrogen donors in 6H-SiC by admittance spectroscopy
1994 StandoutNobel
Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
1994 Standout
Chemical vapor deposition and characterization of 6H-SiC thin films on off-axis 6H-SiC substrates
1988 StandoutNobel
Electrical and optical characterization of SiC
1993
A comprehensive review of ZnO materials and devices
2005 Standout
Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide
1991 StandoutNobel
Cleaning of AlN and GaN surfaces
1998 StandoutNobel
Atomic Layer Deposition: An Overview
2009 Standout
Cathodoluminescence studies of the deep level emission bands of AlxGa1−xN films deposited on 6H–SiC(0001)
1998 StandoutNobel
Recent developments in SiC single-crystal electronics
1992
Binding energy for the intrinsic excitons in wurtzite GaN
1996 StandoutNobel
Electro- and photoluminescence properties of Mn2+ in ZnS and ZnCdS
1981
Thermal Oxidation of SiC and Electrical Properties of Al–SiO2–SiC MOS Structure
1982 StandoutNobel
Brillouin scattering study of bulk GaN
1999 StandoutNobel
Temperature dependence of the current-voltage characteristics of metal-semiconductor field-effect transistors in n-type β-SiC grown via chemical vapor deposition
1987 StandoutNobel
Pressure-induced phase transition in SiC
1993 StandoutNobel
Nitrogen-implanted SiC diodes using high-temperature implantation
1992
Properties of the yellow luminescence in undoped GaN epitaxial layers
1995 StandoutNobel
Epitaxial growth of β-SiC thin films on 6H α-SiC substrates via chemical vapor deposition
1986 StandoutNobel
High-temperature depletion-mode metal-oxide-semiconductor field-effect transistors in beta-SiC thin films
1987 StandoutNobel
Step-Controlled Epitaxial Growth of SiC
1989
Atomic Layer Epitaxy
1984
An examination of double positioning boundaries and interface misfit in beta-SiC films on alpha-SiC substrates
1988
Prospects for device implementation of wide band gap semiconductors
1992
Hall effect and infrared absorption measurements on nitrogen donors in 6H-silicon carbide
1992
Characterization of device parameters in high-temperature metal-oxide-semiconductor field-effect transistors in β-SiC thin films
1988 StandoutNobel
Metal Schottky barrier contacts to alpha 6H-SiC
1992 StandoutNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Deposition of highly resistive, undoped, and p-type, magnesium-doped gallium nitride films by modified gas source molecular beam epitaxy
1993 StandoutNobel
Intrinsic exciton transitions in GaN
1998 StandoutNobel
Single crystals of SiC and their application to blue LEDs
1992
Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation
1997 StandoutNobel
Formation energies, abundances, and the electronic structure of native defects in cubic SiC
1988 StandoutNobel
Strain effects on excitonic transitions in GaN: Deformation potentials
1996 StandoutNobel
Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction
1998 StandoutNobel
Prospects for LED lighting
2009 StandoutNobel
Fabrication of P-N Junction Diodes Using Homoepitaxially Grown 6H-SiC at Low Temperature by Chemical Vapor Deposition
1987
Doped zinc sulfide nanocrystals precipitated within a poly(ethylene oxide) matrix - processing and optical characteristics
1994
Strain-related phenomena in GaN thin films
1996 StandoutNobel
Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
1997 StandoutNobel
Electron-beam-induced optical memory effects in GaN
2002 StandoutNobel
Aluminum nitride/silicon carbide multilayer heterostructure produced by plasma-assisted, gas-source molecular beam epitaxy
1993 StandoutNobel
Deep level defects in n-type GaN
1994 StandoutNobel
InGaN‐based blue/green LEDs and laser diodes
1996 StandoutNobel
Magneto-optical studies of GaN and GaN/AlxGa1−xN: Donor Zeeman spectroscopy and two dimensional electron gas cyclotron resonance
1996 StandoutNobel
Organometallic Synthesis and Spectroscopic Characterization of Manganese-Doped CdSe Nanocrystals
2000 StandoutNobel
Deposition and doping of silicon carbide by gas-source molecular beam epitaxy
1997 StandoutNobel
Growth mechanism of 6H-SiC in step-controlled epitaxy
1993
Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafers
1990
Atomic layer epitaxy
1986
Optical properties of manganese-doped nanocrystals of ZnS
1994 Standout
High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma
1997 StandoutNobel
Effects of gas flow ratio on silicon carbide thin film growth mode and polytype formation during gas-source molecular beam epitaxy
1994 StandoutNobel
CVD growth and characterization of single-crystalline 6H silicon carbide
1993
Boron-related deep centers in 6H-SiC
1990
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
2000 StandoutNobel
MBE growth of 3C·SiC/6·SiC and the electric properties of its p-n junction
1987
Works of D. Theis being referenced
Wavelength‐modulated reflectivity spectra of ZnSe and ZnS from 2.5 to 8 eV
1977
A new degradation phenomenon in blue light emitting silicon carbide diodes
1981
Silicon carbide blue light emitting diodes with improved external quantum efficiency
1982
Application of thin film electroluminescent devices
1981
Single crystal growth of SiC substrate material for blue light emitting diodes
1983
Time resolved spectroscopy of ZnS : Mn by dye laser technique
1976
Cross-sectional transmission electron microscopy of electroluminescent thin films fabricated by various deposition methods
1983