D. Sweatman

Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

High dielectric constant oxides

Recent Advances and Industrial Applications of Multilevel Converters

Commercial impact of silicon carbide

Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide

Recent Advances in (0001) 4H-SiC MOS Device Technology

Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process

High dielectric constant gate oxides for metal oxide Si transistors

Low dielectric constant materials for microelectronics

Reaction–diffusion in high-k dielectrics on Si

Dielectric and ferroelectric properties of SrTiO3-Bi0.54Na0.46TiO3-BaTiO3 lead-free ceramics for high energy storage applications

The restaurant at the end of the random walk: recent developments in the description of anomalous transport by fractional dynamics

Growth and characterization of ultrathin nitrided silicon oxide films

Electroceramics for High-Energy Density Capacitors: Current Status and Future Perspectives

Imaging the Photoionization of Individual CdSe/CdS Core−Shell Nanocrystals on n- and p-Type Silicon Substrates with Thin Oxides

A Survey of Wide Bandgap Power Semiconductor Devices

Dielectric and Magnetic Properties of Ba(Fe1/2Ta1/2)O3-BiFeO3 Ceramics

Model for dielectric growth on silicon in a nitrous oxide environment

Analysis of Fowler–Nordheim injection in NO nitrided gate oxide grown on n-type 4H–SiC

High quality ultrathin dielectric films grown on silicon in a nitric oxide ambient

Interfacial characteristics of N2O and NO nitrided SiO2 grown on SiC by rapid thermal processing