D. Stephani

A survey of the present status of vacuum microelectronics

White light-emitting diode based on fluorescent SiC

A critical review of ohmic and rectifying contacts for silicon carbide

High-power wind energy conversion systems: State-of-the-art and emerging technologies

Recent Advances and Industrial Applications of Multilevel Converters

A review of Ga2O3 materials, processing, and devices

Growth study and impurity characterization of Al In1−N grown by metal organic chemical vapor deposition

Commercial impact of silicon carbide

Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN

Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer

Design of junction termination structures for GaN Schottky power rectifiers

Electron Injection from Copper Diimine Sensitizers into TiO₂: Structural Effects and Their Implications for Solar Energy Conversion Devices

SOFT LITHOGRAPHY

SiC materials-progress, status, and potential roadblocks

Low-loss, high-voltage 6H-SiC epitaxial p-i-n diode

Determining 4H silicon carbide electronic properties through combined use of device simulation and metal–semiconductor field-effect-transistor terminal characteristics

HVDC Circuit Breakers: A Review Identifying Future Research Needs

Polymeric silicon‐containing resist materials

Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation

Probing transient molecular structures with time-resolved pump/probe XAFS using synchrotron X-ray sources

Power Conversion With SiC Devices at Extremely High Ambient Temperatures

Wide-bandgap semiconductor materials: For their full bloom

A review of nuclear batteries

SiC Schottky Diodes for Harsh Environment Space Applications

A Survey of Wide Bandgap Power Semiconductor Devices

Review of high-power microwave source research

The NSLS 100 element solid state array detector

Significantly improved performance of MOSFETs on silicon carbide using the 15R-SiC polytype

Epitaxial growth of SiC in a single and a multi wafer vertical CVD system: a comparison.

Anisotropy of the electron Hall mobility in 4H, 6H, and 15R silicon carbide

Performance and Reliability Issues of SiC-Schottky Diodes

Application-Oriented Unipolar Switching SiC Devices

1700 V SiC Schottky Diodes Scaled to 25 A

Unipolar SiC power devices and elevated temperature

Static and Dynamic Characteristics of 4H-SiC JFETs Designed for Different Blocking Categories

Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage Applications

Optical lithography and O2/RIE pattern transfer characteristics of the silicon-containing positiv resist (SPR)

Periphery protection for silicon carbide devices: state of the art and simulation

Field emission from metal-coated silicon tips