D. Robein

Quantum dot solar cells

Time-Resolved Fluorescence of Carbon Nanotubes and Its Implication for Radiative Lifetimes

First-principles calculations for point defects in solids

Wavelength conversion technologies for WDM network applications

A review of Ga2O3 materials, processing, and devices

Design and implementation of a low temperature near-field scanning optical microscope

Optical investigation of the one-dimensional confinement effects in narrow GaAs/GaAlAs quantum wires

Long intrinsic radiative lifetimes of excitons in quantum wires

Growth and characteristics of Fe-doped GaN

Nonpolara-Plane AlGaN/GaN Heterostructure Field-Effect Transistors Grown on Freestanding GaN Substrate

Photoluminescence from a single GaAs/AlGaAs quantum dot

Energy levels of an artificial atom probed with single-electron capacitance spectroscopy

Chemistry and Properties of Nanocrystals of Different Shapes

Wavelength converter based on integrated all-activethree-port Mach-Zehnder interferometer

Hydrogen-related defects in crystalline semiconductors: a theorist's perspective

Novel design scheme for high-speed MQW lasers with enhanced differential gain and reduced carrier transport effect

Hydrogen interactions with defects in crystalline solids

Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAs

Hydrogen passivation of shallow acceptors in p-type InP

Hydrogen-decorated lattice defects in proton implanted GaN

Barrier strain influence on the high-speed properties of compressively strained InGaAsP multiquantum-well laser structures

Fabrication and Luminescence of Narrow Reactive Ion Etched In_1-xGa_xAs/InP and GaAs/Gas_1-xAl_xAs Quantum Wires

Experimental study of the hydrogen complexes in indium phosphide

Luminescence of narrow RIE etched In1−xGaxAs/InP and GaAs/Ga1−xAlxAs quantum wires

Iron incorporation in InP layers using a ferrocene source in atmospheric pressure MOVPE

20 GHz bandwidth 1.5 μm wavelength VUG DFB laser using a zero net strain In _x Ga _{1− x} As _y P _{1− y} well active structure grown at constant y

Extremely low threshold operation of 1.5 μm GaInAsP/InP buried ridge stripe lasers

The growth and characterization of device quality InP/ Ga1-xinxasyp1-y double heterostructures by atmospheric-pressure MOVPE using trimethylindium