Citation Impact

Citing Papers

Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Quantum computers
2010 StandoutNature
Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide
2013 Standout
Nanocrystal Quantum Dots: From Discovery to Modern Development
2021 StandoutNobel
Disordered electronic systems
1985 Standout
Zeeman Effect of Bound Excitons in Gallium Phosphide
1963
Effective mass approximation for excitons
1956
Structure in the lowest absorption feature of CdSe quantum dots
1995 StandoutNobel
Multiband and multivalley effective-mass theory for impurities in semiconductors
1979
Absorption spectra of impurities in silicon—I
1956
Emission spectroscopy on two-dimensional systems
1980 StandoutNobel
Donor and acceptor states in lightly doped polyacetylene,(CH)x
1979 StandoutNobel
Band lineups and deformation potentials in the model-solid theory
1989 Standout
Luminescence properties of defects in GaN
2005 Standout
Impurity Conduction in Transmutation-Dopedp-Type Germanium
1960
Electrical Properties of Sulfur-Doped Gallium Phosphide
1968 StandoutNobel
Chemical Shifts of Acceptor Binding Energies andgFactors in Si and Ge
1970
Electrical and optical properties of TiO2 anatase thin films
1994 Standout
Higher excited electronic states in clusters of ZnSe, CdSe, and ZnS: Spin-orbit, vibronic, and relaxation phenomena
1986 StandoutNobel
Maximum Metallic Resistance in Thin Wires
1977 StandoutNobel
Measurement and assignment of the size-dependent optical spectrum in CdSe quantum dots
1996 StandoutNobel
Theory of the Effect of Finite Crystal Size on the Frequencies and Intensities of Impurity Absorption Lines in Semiconductors
1971
Electron-phonon interactions from first principles
2017 Standout
Line-Broadening of Cyclotron Resonance due to Lattice and Neutral Impurity Scattering in Silicon and Germanium
1964
Unusual luminescence lines in GaN
2003
Electron localization in polyaniline derivatives
1990 StandoutNobel
Theory of Valley Splitting in anN-Channel (100) Inversion Layer of Si I. Formulation by Extended Zone Effective Mass Theory
1977
Theory of binding energies of acceptors in semiconductors
1977
Self-Diffusion of Supercooled o-Terphenyl near the Glass Transition Temperature
2005
Rotational Relaxation in ortho-Terphenyl: Using Atomistic Simulations to Bridge Theory and Experiment
2013 StandoutNobel
New method for a scaling theory of localization
1980 StandoutNobel
Ionicity of the Chemical Bond in Crystals
1970 Standout
Measurements of radial profiles ofHe2+transport coefficients on the TFTR tokamak
1990 StandoutNobel
Ultracold Bose Gases in 1D Disorder: From Lifshits Glass to Bose-Einstein Condensate
2007 StandoutNobel
GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications
1985 Standout
Band-edge exciton in quantum dots of semiconductors with a degenerate valence band: Dark and bright exciton states
1996 StandoutNobel
Electrons in disordered systems and the theory of localization
1974 StandoutNobel
Electrical Conductivity in Doped Polyacetylene
1977 StandoutNobel
Semiconducting and other major properties of gallium arsenide
1982 Standout
Electrical transport in doped polyacetylene
1980 StandoutNobel
Determination of the spin-exchange interaction constant in wurtzite GaN
1998 StandoutNobel
Binding energies of acceptors in GaAs-AlxGa1xAsquantum wells
1983
Multi-Valley Effective Mass Theory
1979
Highly conducting polyacetylene: Three-dimensional delocalization
1991 StandoutNobel
Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101¯1¯) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
2010 StandoutNobel
Analytical formalism for determining quantum-wire and quantum-dot band structure in the multiband envelope-function approximation
1990
Electron-Hole Exchange Energy in Shallow Excitons
1964
Soliton-antisoliton configurations and the linear and nonlinear optical response of degenerate-ground-state conjugated polymers
1994 StandoutNobel
Recent advances in organic thermally activated delayed fluorescence materials
2017 Standout
Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films
2009 StandoutNobel
Anomalous Magnetoresistance of Quasi One-DimensionalHg3δAsF6
1979 StandoutNobel
Optical properties of disordered molecular aggregates: A numerical study
1991 Standout
The electronic structure of impurities and other point defects in semiconductors
1978
Band structure and impurity states in diluted magnetic semiconductors
1984
Size dependence of exciton fine structure in CdSe quantum dots
1996 StandoutNobel
Molecular rectifiers
1974 Standout
Conductivity of quasi-one-dimensional metal systems
1978 StandoutNobel
Anderson's localization of molecular excitons in substitutionally disordered systems
1977 StandoutNobel
Strain Effects on Optical Critical-Point Structure in Diamond-Type Crystals
1969
Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region
2014 StandoutNobel
Angular Momentum Theory and Localized States in Solids. Investigation of Shallow Acceptor States in Semiconductors
1970
Spherical Model of Shallow Acceptor States in Semiconductors
1973
Helium diffraction from the GaAs(110) surface and the generation of helium-surface potentials
1982 StandoutNobel
Isotope effects on the optical spectra of semiconductors
2005
Quantum-limit cyclotron resonance linewidth due to an electron-phonon interaction
1982 StandoutNobel
Application of a total-angular-momentum basis to quantum-dot band structure
1990
Introduction to localization
1980 StandoutNobel
Diluted magnetic semiconductors
1988 Standout
Enhancement of the Neutral-Beam Stopping Cross Section in Fusion Plasmas Due to Multistep Collision Processes
1984
The theory of impurity conduction
1961
First-principles study of native point defects in ZnO
2000 Standout
Energy Levels of Direct Excitons in Semiconductors with Degenerate Bands
1971
Electron localization and charge transport in poly(o-toluidine): A model polyaniline derivative
1991 StandoutNobel
Electronic properties of two-dimensional systems
1982 Standout
Observation of quantum wire formation at intersecting quantum wells
1992 StandoutNobel

Works of D. E. Schechter being referenced

Theory of shallow acceptor states in Si and Ge
1962
Theory of Acceptor Levels in Germanium
1955
Pseudoptential theory of shallow-donor ground states. II
1975
Power flow along a 40-kV multimegawatt neutral beam line
1979
The Breakdown of Effective Mass Equations Due to Rapidly Varying Potentials
1969
EPR Spectrum of Cr3+: K2NaCo(CN)6
1967
Shallow Impurity Surface States in Silicon
1967
Pseudopotential Theory of Shallow-Donor Ground States
1973
Rankless by CCL
2026