Citation Impact
Citing Papers
Solar-to-hydrogen efficiency of more than 9% in photocatalytic water splitting
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2D transition metal dichalcogenides
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Optical microcavities
2003 StandoutNature
Engineering atomic and molecular nanostructures at surfaces
2005 StandoutNature
Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices
2001 StandoutNature
Dependence of Resonance Energy Transfer on Exciton Dimensionality
2011 StandoutNobel
Nanoparticles, Proteins, and Nucleic Acids: Biotechnology Meets Materials Science
2001 Standout
Review: Semiconductor Piezoresistance for Microsystems
2009
Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching
2014 StandoutNobel
Microscopic thickness variation of macroscopically uniform quantum wells
1992
Doping considerations for heterojunctions
1983
Interface roughness of InAs/AlSb superlattices investigated by x-ray scattering
1996 StandoutNobel
Physics of thin-film ferroelectric oxides
2005 Standout
Electron localization by a donor in the vicinity of a basal stacking fault in GaN
2009
Measurement of GaAs surface oxide desorption temperatures
1987
Reflection high-energy electron diffraction oscillations during growth of GaAs at low temperatures under high As overpressure
1997
Investigation of Bismuth Triiodide (BiI3) for Photovoltaic Applications
2015 StandoutNobel
Cryogenic performance of double-fused 1.5-μm vertical cavity lasers
1999
Thermometry and Thermal Transport in Micro/Nanoscale Solid-State Devices and Structures
2001
Deep donor levels (D X centers) in III-V semiconductors
1990
Luminescence related to high density of Mg-induced stacking faults in homoepitaxially grown GaN
2011 StandoutNobel
Cleaning of AlN and GaN surfaces
1998 StandoutNobel
Near-Field Spectroscopy of the Quantum Constituents of a Luminescent System
1994 StandoutScienceNobel
Minimum temperature sensitivity of 1.55 μm vertical-cavity lasers at −30 nm gain offset
1998
Emergence of colloidal quantum-dot light-emitting technologies
2012 StandoutNobel
Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy
2006 StandoutNobel
Subpicosecond four-wave mixing in GaAs/Al x Ga 1 − x
1991
Optical Gain and Stimulated Emission in Nanocrystal Quantum Dots
2000 StandoutScienceNobel
Observation of the coupled exciton-photon mode splitting in a semiconductor quantum microcavity
1992 Standout
Making Nonmagnetic Semiconductors Ferromagnetic
1998 StandoutScience
Spontaneous ordering of nanostructures on crystal surfaces
1999
X-ray diffraction determination of interfacial roughness correlation in SixGe1−x/Si and GaAs/AlxGa1−xAs superlattices
1992
GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications
1985 Standout
Does luminescence show semiconductor interfaces to be atomically smooth?
1990
(CdSe)ZnS Core−Shell Quantum Dots: Synthesis and Characterization of a Size Series of Highly Luminescent Nanocrystallites
1997 StandoutNobel
Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching
2005 StandoutNobel
Optical phonon probes of the lateral scale of interface roughness: A theoretical investigation
1994
AlAsSb-based distributed Bragg reflectorsusing InAlGaAs as high-index layer
1999 StandoutNobel
Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates
2006 StandoutNobel
Optical observation of discrete well width fluctuations in wide band gap III‐nitride quantum wells
2007 StandoutNobel
The use of synchrotron radiation techniques in the characterization of strained semiconductor heterostructures and thin films
2004
Properties of the main Mg-related acceptors in GaN from optical and structural studies
2014 StandoutNobel
Evidence for localized Si-donor state and its metastable properties in AlGaN
1999 StandoutNobel
GaN blue photonic crystal membrane nanocavities
2005 StandoutNobel
Molecular-beam-epitaxial growth and selected properties of GaAs layers and GaAs/(Al,Ga)As superlattices with the (211) orientation
1986 StandoutNobel
Low-threshold vertical-cavity surface-emitting lasers based on oxide-confinement and high contrast distributed Bragg reflectors
1997
Comprehensive analysis of Si-dopedAl x Ga 1 − x As x = 0 to 1
1984
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Stretchable, Skin‐Mountable, and Wearable Strain Sensors and Their Potential Applications: A Review
2016 Standout
Probing the AlxGa1−xN spatial alloy fluctuation via UV-photoluminescence and Raman at submicron scale
2002 StandoutNobel
Structural and optical investigation of InAsxP1−x/InP strained superlattices
1998
Chalcogenide passivation of III–V semiconductor surfaces
1998
Chemical Mapping of Semiconductor Interfaces at Near-Atomic Resolution
1989
Photoluminescence from ultrathin ZnSe/CdSe quantum wells
1993
Transport and persistent photoconductivity in atomic-planar-doped GaAs-AlAs/GaAs heterostructures
1988 StandoutNobel
Serpentine superlattice quantum-wire arrays of (Al,Ga)As grown on vicinal GaAs substrates
1992 StandoutNobel
X-ray diffraction measurement of partially correlated interfacial roughness in multilayers
1993
III N V semiconductors for solar photovoltaic applications
2002
Phonons and related crystal properties from density-functional perturbation theory
2001 Standout
Donor energy level for Se in Ga1−xAlxAs
1982
Wafer-Bonding and Thinning Technologies
1998
GaAsAlGaAs MQW and GRINSCH lasers grown by molecular beam epitaxy
1985
Influence of the interface composition of InAs/AlSb superlattices on their optical and structural properties
1995 StandoutNobel
Gallium-nitride-based microcavity light-emitting diodes with air-gap distributed Bragg reflectors
2007 StandoutNobel
Strain-induced polarization in wurtzite III-nitride semipolar layers
2006 StandoutNobel
Persistent photoconductivity and the quantized Hall effect in In0.53Ga0.47As/InP heterostructures
1984 StandoutNobel
Nanoscale thermal transport
2003 Standout
Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels
2004 StandoutNobel
Molecular beam epitaxy
1985
Persistent photo-conductance and photoquenching of selectively doped Al0.3Ga0.7As GaAs/heterojunctions
1983
Formation of High-Quality CdTe, CdSe, and CdS Nanocrystals Using CdO as Precursor
2000 Standout
Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission
2012 StandoutNobel
Deep levels in Te-doped AlSb grown by molecular beam epitaxy
1990 StandoutNobel
Sharp-line photoluminescence of excitons localized at GaAs/AlGaAs quantum well inhomogeneities
1994
Threshold transport of high-mobility two-dimensional electron gas in GaAs/AlGaAs heterostructures
1988 StandoutNobel
The present status of quantum dot lasers
1999
Recovery kinetics during interrupted epitaxial growth
1990
Band parameters for nitrogen-containing semiconductors
2003 Standout
First-principles calculations for defects and impurities: Applications to III-nitrides
2004 Standout
Synthesis of Luminescent Thin-Film CdSe/ZnSe Quantum Dot Composites Using CdSe Quantum Dots Passivated with an Overlayer of ZnSe
1996 StandoutNobel
Disclosing the Complex Structure of UiO-66 Metal Organic Framework: A Synergic Combination of Experiment and Theory
2011 Standout
Photoluminescence Spectroscopy of Single CdSe Nanocrystallite Quantum Dots
1996 StandoutNobel
Works of D. E. Mars being referenced
Laterally oxidized long wavelength CW vertical- cavity lasers
1996
Growth of 1.3 μm InGaAsN laser material on GaAs by molecular beam epitaxy
1999
Interband optical absorption in free standing layer of Ga0.96In0.04As0.99N0.01
2000
Kinetics of island formation at the interfaces of AlGaAs/GaAs/AlGaAs quantum wells upon growth interruption
1987
Structural changes of the interface, enhanced interface incorporation of acceptors, and luminescence efficiency degradation in GaAs quantum wells grown by molecular beam epitaxy upon growth interruption
1986
Pressure and temperature dependence of the absorption edge of a thick Ga0.92In0.08As0.985N0.015 layer
1998
Deep electron traps in organometallic vapor phase grown AlxGa1−xAs
1980
An indium-free mount for GaAs substrate heating during molecular beam epitaxial growth
1986
Inequivalence of normal and inverted interfaces of molecular-beam epitaxy grown AlGaAs/GaAs quantum wells
1990
Binary AlAs/GaAs versus ternary GaAlAs/GaAs interfaces: A dramatic difference of perfection
1992
Anomalies in MODFET's with a low-temperature buffer
1990
Cathodoluminescence atomic scale images of monolayer islands at GaAs/GaAlAs interfaces
1987
Laterally oxidized long wavelength cw vertical-cavity lasers
1996
The growth of high quality Alx Ga1−xAs by molecular beam epitaxy and its application to double-heterojunction lasers
1983
Heterojunction-induced phenomena in Hall effect and photoconductivity measurements of epitaxial AlxGa1−xAs
1983
Passivation of GaAs surfaces and AlGaAs/GaAs heterojunction bipolar transistors using sulfide solutions and SiNx overlayer
1995
Design and analysis of double-fused 1.55-μm vertical-cavity lasers
1997
Dramatic reduction of sidegating in MODFETs
1988
Room-temperature continuous-wave operation of 1.54-μm vertical-cavity lasers
1995