Citation Impact
Citing Papers
Tightly bound trions in monolayer MoS2
2012 Standout
Universal Elastic Anisotropy Index
2008 Standout
Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide
2013 Standout
Similarity between the 0.88-eV photoluminescence in GaN and the electron-capture emission of theO P
1998 StandoutNobel
GaAs lower conduction-band minima: Ordering and properties
1976
Dependence of electron mobility in modulation-doped GaAs-(AlGa)As heterojunction interfaces on electron density and Al concentration
1981 StandoutNobel
Electrical characterization of epitaxial layers
1976
Mobility of holes of zinc-blende III–V and II–VI compounds
1974
Temperature dependence of excitonic transitions in a-plane AlN epitaxial layers
2009 StandoutNobel
Theoretical and experimental investigations of subpicosecond photoconductivity
1989 StandoutNobel
Band-gap shifts in heavilyp-type doped semiconductors of the zinc-blende and diamond type
1986
Dynamical aspects of luminescence from GaAs-AlAs single quantum wells under hydrostatic pressure
1989 StandoutNobel
First-principles calculations for point defects in solids
2014 Standout
Heavily doped GaAs:Se. I. Photoluminescence determination of the electron effective mass
1990
Low-Temperature Luminescence of GaN
1970
Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
1994 Standout
Refraction Index Measurements on AlN Single Crystals
1966
Indirect, Γ8v-X1c, band gap in GaAs1−xPx
1972
Spintronics: Fundamentals and applications
2004 Standout
The incorporation and characterisation of acceptors in epitaxial GaAs
1975
Optical properties of high-quality InGaAs/InAlAs multiple quantum wells
1991 StandoutNobel
A comprehensive review of ZnO materials and devices
2005 Standout
Intriguing Optoelectronic Properties of Metal Halide Perovskites
2016 Standout
Free-exciton energy spectrum in GaAs
1976
Radiation Defect Introduction Rates inn p
1962
Transport properties of GaAs-AlxGa1−x As heterojunction field-effect transistors
1981 StandoutNobel
Optical investigation of stress in the central GaAs layer of molecular-beam-grown AlxGa1−xAs-GaAs-AlxGa1−xAs structures
1975
Higher excited electronic states in clusters of ZnSe, CdSe, and ZnS: Spin-orbit, vibronic, and relaxation phenomena
1986 StandoutNobel
Point defects and dopant diffusion in silicon
1989 Standout
Evaporated Sn-doped In2O3 films: Basic optical properties and applications to energy-efficient windows
1986 Standout
Split-Off Valence-Band Parameters for GaAs from Stress-Modulated Magnetoreflectivity
1970
Observation of the coupled exciton-photon mode splitting in a semiconductor quantum microcavity
1992 Standout
Photoionization Cross Section for Manganese Acceptors in Gallium Arsenide
1973
Upper bounds for the ground-state energy of the exciton-phonon system
1975
GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications
1985 Standout
Optical absorption and photoluminescence studies of thin GaAs layers in GaAs–AlxGa1−xAs double heterostructures
1974
Semiconducting and other major properties of gallium arsenide
1982 Standout
Impurity-Band Tails in the High-Density Limit. I. Minimum Counting Methods
1966
Determination of the spin-exchange interaction constant in wurtzite GaN
1998 StandoutNobel
Electroreflectance of p-type GaAs
1969
Non-radiative transitions in semiconductors
1981
Photoluminescence study of Si-doped GaN∕Al0.07Ga0.93N multiple quantum wells with different dopant position
2004 StandoutNobel
Hall-Effect Levels Produced in Te-Doped GaAs Crystals by Cu Diffusion
1967
Absorption Edge of Impure Gallium Arsenide
1965
Concentration dependence of the absorption coefficient for n− and p−type GaAs between 1.3 and 1.6 eV
1975
Influence of an undoped (AlGa)As spacer on mobility enhancement in GaAs-(AlGa)As superlattices
1981 StandoutNobel
Observation of two-dimensional electrons in LPE-grown GaAs-AlxGa1−xAs heterojunctions
1979 StandoutNobel
Stress-Modulated Magnetoreflectivity of Gallium Antimonide and Gallium Arsenide
1972
Excitonic exchange splitting in bulk semiconductors
1999
Two-dimensional electron gas on etched GaAs sidewalls by liquid phase epitaxial regrowth
1989 StandoutNobel
Band‐to‐Band Radiative Recombination in Groups IV, VI, and III‐V Semiconductors (I)
1967
Temperature dependence of the mobility of two-dimensional hole systems in modulation-doped GaAs-(AlGa)As
1984 StandoutNobel
Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-A
1961
Two-dimensional hole gas at a semiconductor heterojunction interface
1980 StandoutNobel
Excitons in Degenerate Semiconductors
1967
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Transport and persistent photoconductivity in atomic-planar-doped GaAs-AlAs/GaAs heterostructures
1988 StandoutNobel
Polariton Reflectance and Photoluminescence in High-Purity GaAs
1973
Optical and Electrical Properties of Epitaxial and Diffused GaAs Injection Lasers
1967
The photoluminescence spectrum of bound excitons in indium phosphide and gallium arsenide
1972
Dependence of the exchange splitting in excitons on the interatomic distance
1972
Vacancy Association of Defects in Annealed GaAs
1971 StandoutNobel
Effects of Uniaxial Stress on the Free and Bound Exciton in GaSb at 1.7 °K
1971
The electronic structure of impurities and other point defects in semiconductors
1978
Concentration-dependent absorption and spontaneous emission of heavily doped GaAs
1976
Excitation intensity dependence of shallow donor bound exciton luminescence in n-GaAs
1978
Interdot interactions and band gap changes in CdSe nanocrystal arrays at elevated pressure
2001 StandoutNobel
Molecular beam epitaxial growth of GaP on Si
1984 StandoutNobel
Self-energy operators and exchange-correlation potentials in semiconductors
1988 Standout
Backside-gated modulation-doped GaAs-(AlGa)As heterojunction interface
1981 StandoutNobel
E 0+Δ0 transitions in GaSb/AlSb quantum wells
1987 StandoutNobel
High-temperature carrier transport in n-type epitaxial GaAs
1980
Energy band gaps and lattice parameters evaluated with the Heyd-Scuseria-Ernzerhof screened hybrid functional
2005 Standout
Concentration dependence of the refractive index for n - and p -type GaAs between 1.2 and 1.8 eV
1974
Electron Mobility in Ge, Si, and GaP
1972
Electrical properties of Ge-doped p-type AlxGa1−xAs
1979
Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV
1983 Standout
Gallium arsenide and (alga)as devices prepared by Liquid-Phase epitaxy (Review Article)
1974
Determination of the analytical and the nonanalytical part of the exchange interaction of InP and GaAs from polariton spectra in intermediate magnetic fields
1979
Electrical Properties of the GaAsX 1 C
1970
Radiative recombination mechanisms in GaAsP diodes with and without nitrogen doping
1972
Nonhydrogenic Exciton and Energy Gap of GaAs
1972
Effective masses of electrons and heavy holes in GaAs, InAs, A1As and their ternary compounds
1995
Characterization of high purity GaAs grown by molecular beam epitaxy
1982 StandoutNobel
Resistance standard using quantization of the Hall resistance of GaAs-AlxGa1−xAs heterostructures
1981 StandoutNobel
Fundamental Energy Gaps of AlAs and Alp from Photoluminescence Excitation Spectra
1973
Observations Concerning Radiative Efficiency and Deep-Level Luminescence in n-Type GaAs Prepared by Liquid-Phase Epitaxy
1968
Electron Spin Resonance onG a A s − Al x Ga 1 − x As
1983 StandoutNobel
Resonant Polariton Fluorescence in Gallium Arsenide
1977
Resolved Free-Exciton Transitions in the Optical-Absorption Spectrum of GaAs
1972
First-principles study of native point defects in ZnO
2000 Standout
Band parameters for nitrogen-containing semiconductors
2003 Standout
Band‐to‐Band Radiative Recombination in Groups IV, VI, and III–V Semiconductors (II)
1967
Non‐Radiative Transitions in Semiconductors
1970
Free-Carrier Radiation Peak in GaAs Due to Valence-Band Maxima Arising from Terms Linear ink
1969
Band-gap shifts in heavily dopedn-type GaAs
1986
Variation of minority-carrier diffusion length with carrier concentration in GaAs liquid-phase epitaxial layers
1973
High-precision determination of the temperature dependence of the fundamental energy gap in gallium arsenide
1992
Energy Levels of Direct Excitons in Semiconductors with Degenerate Bands
1971
Electron mobilities in modulation-doped semiconductor heterojunction superlattices
1978 StandoutNobel
Electric field dependence of optical absorption near the band gap of quantum-well structures
1985 Standout
Heavily doped semiconductors and devices
1978
Radiation effects on modulation-doped GaAs-AlxGa1−xAs heterostructures
1983 StandoutNobel
Electronic properties of two-dimensional systems
1982 Standout
Long-lifetime photoconductivity effect in n-type GaAlAs
1977
Observation of quantum wire formation at intersecting quantum wells
1992 StandoutNobel
The electron effective mass in heavily doped GaAs
1979
Observation of Magnetophonon Resonances in a Two-Dimensional Electronic System
1980 StandoutNobel
Works of D. E. Hill being referenced
Exciton Recombination Radiation of GaAs: Zn
1970
Activation Energy of Holes in Zn-Doped GaAs
1970
Shubnikov-de Haas Oscillations inn
1970
Electron Bombardment of Silicon
1959
Internal Quantum Efficiency of GaAs Electroluminescent Diodes
1965
Effect of the Direct-Indirect Transition on the Hall Effect in Ga(As1−xPx)
1966
Anomalously high ``mobility'' in GaAs
1973
Near band-edge optical absorption in pure GaAs
1972
Infrared Transmission and Fluorescence of Doped Gallium Arsenide
1964
Free-Carrier and Exciton Recombination Radiation in GaAs
1968
Electroluminescence and Electrical Properties of High-Purity Vapor-Grown GaP
1971
Uniaxial-strain effects on n = 1 free-exciton and free-carrier lines in GaAs
1970
Semiconducting Properties of Cubic Boron Phosphide
1960
Far-Infrared Donor Absorption and Photoconductivity in Epitaxialn
1970