Citation Impact
Citing Papers
Alternative Plasmonic Materials: Beyond Gold and Silver
2013 Standout
Quasi-Electric Fields and Band Offsets: Teaching Electrons New Tricks (Nobel Lecture)
2001 Nobel
Emergent phenomena at oxide interfaces
2012 Standout
Definitive Molecular Level Characterization of Defects in UiO‐66 Crystals
2015 StandoutNobel
Transition-metal impurities in semiconductors and heterojunction band lineups
1988
The structure and properties of metal-semiconductor interfaces
1982
Multispectral imaging via luminescent down-shifting with colloidal quantum dots
2013 StandoutNobel
Dependence of electron mobility in modulation-doped GaAs-(AlGa)As heterojunction interfaces on electron density and Al concentration
1981 StandoutNobel
Interface properties for GaAs/InGaAlP heterojunctions by the capacitance-voltage profiling technique
1987
Two-dimensional electron gas m.e.s.f.e.t. structure
1980
Mobility of the two-dimensional electron gas in GaAs-AlxGa1−xAs heterostructures
1984 StandoutNobel
Measurement of polarization charge and conduction-band offset at InxGa1−xN/GaN heterojunction interfaces
2004
Dynamical aspects of luminescence from GaAs-AlAs single quantum wells under hydrostatic pressure
1989 StandoutNobel
Carrier transport and confinement in polarization-induced three-dimensional electron slabs: Importance of alloy scattering in AlGaN
2006
Electrical properties of strained AlN/GaN superlattices on GaN grown by metalorganic vapor phase epitaxy
2002 StandoutNobel
In0.53Ga0.47As/InP heterojunctions with low interface defect densities
1991
Effect of doping and polarization on carrier collection in InGaN quantum well solar cells
2011 StandoutNobel
Determination of the band offset and the characteristic interdiffusion length in quantum-well lasers using a capacitance–voltage technique
2000
Band offsets at heterointerfaces: Theoretical basis, and review of recent experimental work
1986 StandoutNobel
Non-polar m-plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors
2013 StandoutNobel
Staggered band alignments in AlGaAs heterojunctions and the determination of valence-band offsets
1986
Low field mobility of 2-d electron gas in modulation doped AlxGa1−xAs/GaAs layers
1983
A Capacitance Investigation of InGaAs/InP Isotype Heterojunction
1983
Relationship between the conduction-band discontinuities and band-gap differences of InGaAsP/InP heterojunctions
1984
Transport properties of GaAs-AlxGa1−x As heterojunction field-effect transistors
1981 StandoutNobel
Flat band current-voltage-temperature method for band-discontinuity determination and its application to strained InxGa1−xAs/In0.52Al0.48As heterostructures
1994
Accurate determination of the band-offset of a quantum semiconductor structure from its capacitance-voltage profile: Application to an InP/Ga0.47In0.53As/InP single quantum well
1997
High-Detectivity Polymer Photodetectors with Spectral Response from 300 nm to 1450 nm
2009 StandoutScienceNobel
On the theory of Debye averaging in the C-V profiling of semiconductors
1981 StandoutNobel
Near-Infrared Quantum Dot Emission Enhanced by Stabilized Self-Assembled J-Aggregate Antennas
2017 StandoutNobel
Band offset of GaAs-GaInP heterojunctions
1993
Resonant tunneling in magnetic field: Evidence for space-charge buildup
1987 StandoutNobel
Modulation-doped (Al,Ga)As/AlAs superlattice: Electron transfer into AlAs
1985
Valence-band offset in strained GaAs-InxGa1−xAs superlattices
1991
Band Bending in Semiconductors: Chemical and Physical Consequences at Surfaces and Interfaces
2012 Standout
Analytic approximations for degenerate accumulation layers in semiconductors, with applications to barrier lowering in isotype heterojunctions
1981 StandoutNobel
A proposal for determination of band offset at a semiconductor heterojunction
1996
Solution-processed hybrid perovskite photodetectors with high detectivity
2014 Standout
Heterostructure devices: A device physicist looks at interfaces
1983 StandoutNobel
Noble-metal–CdTe interface formation
1988 StandoutNobel
Determination of heterojunction band offsets by capacitance-voltage profiling through nonabrupt isotype heterojunctions
1985 StandoutNobel
GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications
1985 Standout
Band discontinuities in GaAs/AlxGa1−xAs heterojunction photodiodes
1987
Raman scattering in (GaP) 1 ) 1
1989 StandoutNobel
Quantum well photoconductors in infrared detector technology
2003
WIEN2k: An APW+lo program for calculating the properties of solids
2020 Standout
Determination of free carrier concentration profiles and the valence-band discontinuity energy of Hg0.7Cd0.3Te/Cd(4% Zn)Te heterojunctions using organic semiconductor layers
1989
Observation of a Bloch-Grüneisen regime in two-dimensional electron transport
1990 StandoutNobel
Determination of the valence-band discontinuity in Be-doped GaAs/Al0.3Ga0.7As multiple-quantum wells using admittance spectroscopy
1994
Influence of an undoped (AlGa)As spacer on mobility enhancement in GaAs-(AlGa)As superlattices
1981 StandoutNobel
Band Discontinuity at AlxGa1-xP/GaP Heterointerfaces Studied by Capacitance Measurements
1992
Band discontinuity for GaAs/AlGaAs heterojunction determined by C-V profiling technique
1985
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Ultrathin Organic Films Grown by Organic Molecular Beam Deposition and Related Techniques
1997 Standout
Electrical depth profile of p-type GaAs/Ga(As, N)/GaAs heterostructures determined by capacitance–voltage measurements
2000
Energy band alignment in GaAs:(Al,Ga)As heterostructures: The dependence on alloy composition
1986
Direct measurement of the polarization charge in AlGaN/GaN heterostructures using capacitance–voltage carrier profiling
2002
Gigabit electronics—A review
1979
Spectroscopic determination of the band discontinuity in GaSb/AlSb multiple-quantum-well structures
1988 StandoutNobel
Third-generation infrared photodetector arrays
2009
Electronic structure of pseudobinary semiconductor alloysAl x Ga 1 − x As Ga P x As 1 − x Ga x In 1 − x P
1981
The role of nonuniform dielectric permittivity in the determination of heterojunction band offsets by C–V profiling through isotype heterojunctions
1985 StandoutNobel
Calculated thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN
2013 StandoutNobel
Negative charge, barrier heights, and the conduction-band discontinuity in AlxGa1−xAs capacitors
1985
Transport properties of selectively doped GaAs-(AlGa)As heterostructures grown by molecular beam epitaxy
1984 StandoutNobel
Frequency resolved admittance spectroscopy measurements on In0.52Al0.48As/InxGa1−xAs/In0.52Al0.48As single quantum well structures
1994
Backside-gated modulation-doped GaAs-(AlGa)As heterojunction interface
1981 StandoutNobel
Determination of the conduction-band discontinuities of GaAs/AlxGa1−xAs interfaces by capacitance-voltage measurements
1985
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
1999 Standout
Measurement of the GaAs/AlAs valence-band offset from a single quantum well near the Γ-X crossover
1995
Defect characterization for epitaxial HgCdTe alloys by electron microscopy
2004
Unfolding the band structure of disordered solids: From bound states to high-mobility Kane fermions
2014
Determination of the valence-band discontinuity between GaAs and (Al,Ga)As by the use of p+-GaAs-(Al,Ga)As-p−-GaAs capacitors
1984
Modulation-doped field-effect transistor based on a two-dimensional hole gas
1984 StandoutNobel
Strain-induced polarization in wurtzite III-nitride semipolar layers
2006 StandoutNobel
Determination of valence and conduction-band discontinuities at the (Ga,In) P/GaAs heterojunction by C-V profiling
1987 StandoutNobel
Polarization charges and polarization-induced barriers in AlxGa1−xN/GaN and InyGa1−yN/GaN heterostructures
2001 StandoutNobel
Heterojunction Photovoltaics Using Printed Colloidal Quantum Dots as a Photosensitive Layer
2009 StandoutNobel
Origin of electrons emitted into vacuum from InGaN light emitting diodes
2014 StandoutNobel
Theoretical study of band offsets at semiconductor interfaces
1987
Electronic properties of junctions between silicon and organic conducting polymers
1990 StandoutNatureNobel
Energy band-gap bowing parameter in an AlxGa1−x N alloy
1987 StandoutNobel
Valence band offset of GaAs/GaAs0.68P0.32 multiple quantum wells
1993
InxGa(1−x)N/InyGa(1−y)N superlattices grown on GaN films
1993 StandoutNobel
Molecular beam epitaxial growth of GaAs on Si(211)
1985 StandoutNobel
Electronic structure of the Yb/Ge(111) interface
1986 StandoutNobel
Measurement of the conduction-band discontinuity of molecular beam epitaxial grown In0.52Al0.48As/In0.53Ga0.47As, N-n heterojunction by C-V profiling
1983
Conduction-band offset in a pseudomorphic GaAs/In0.2Ga0.8As quantum well determined by capacitance–voltage profiling and deep-level transient spectroscopy techniques
1998
Radiation effects on modulation-doped GaAs-AlxGa1−xAs heterostructures
1983 StandoutNobel
Electronic properties of two-dimensional systems
1982 Standout
Works of D. D. Edwall being referenced
Long wavelength infrared, molecular beam epitaxy, HgCdTe-on-Si diode performance
2004
Interface studies of AlxGa1−xAs-GaAs heterojunctions
1979
Improving material characteristics and reproducibility of MBE HgCdTe
1997
Dislocation reduction in HgCdTe on GaAs and Si
1992
Development and fabrication of two-color mid- and short-wavelength infrared simultaneous unipolar multispectral integrated technology focal-plane arrays
2002
Measurement of isotype heterojunction barriers by C-V profiling
1980 StandoutNobel
GaAs charge-coupled devices
1978
MBE growth of HgCdTe epilayers with reduced visible defect densities: Kinetics considerations and substrate limitations
2001
A novel simultaneous unipolar multispectral integrated technology approach for HgCdTe IR detectors and focal plane arrays
2001