Standout Papers

Determination of the atomic structure of inversion domain boundaries in α-GaN by transm... 1996 2026 2006 2016 79
  1. Determination of the atomic structure of inversion domain boundaries in α-GaN by transmission electron microscopy (1998)
    D. Cherns, W. T. Young et al. Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties
  2. Migration of Dislocations in Strained GaN Heteroepitaxial Layers (2002)
    S.‐L. Sahonta, D. Cherns et al. physica status solidi (b)
  3. Observation of coreless dislocations in α-GaN (1997)
    D. Cherns, W. T. Young et al. Journal of Crystal Growth
  4. Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire (2003)
    A. Bell, F. A. Ponce et al. Applied Physics Letters
  5. Nanopipes and Inversion Domains in High-Quality GaN Epitaxial Layers (1996)
    F. A. Ponce, W. T. Young et al. MRS Proceedings
  6. The generation of misfit dislocations in facet-controlled growth of AlGaN∕GaN films (2004)
    D. Cherns, S.‐L. Sahonta et al. Applied Physics Letters
  7. Thick crack‐free AlGaN films deposited by facet‐controlled epitaxial lateral overgrowth (2003)
    R. Liu, A. Bell et al. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

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Works of D. Cherns being referenced

Sputtering of gold foils in a high voltage electron microscope A comparison of theory and experiment
1977
Direct resolution of surface atomic steps by transmission electron microscopy
1974
Thick crack‐free AlGaN films deposited by facet‐controlled epitaxial lateral overgrowth
2003 StandoutNobel
Observation of coreless dislocations in α-GaN
1997 StandoutNobel
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2003 StandoutNobel
Determination of the atomic structure of inversion domain boundaries in α-GaN by transmission electron microscopy
1998 StandoutNobel
Variations in mechanisms of selective area growth of GaN on nano‐patterned substrates by MOVPE
2009
Electron microscope studies of sodium and lithium intercalation in TiS2
1983
Sputtering in the high voltage electron microscope
1976
Electron diffraction from epitaxial crystals—a convergent-beam electron diffraction of the interface structure for NiSi2/Si and Al/GaAs
1989
Characterisation of dislocations, nanopipes and inversion domains in GaN by transmission electron microscopy
1997
Misfit dislocations in epitaxial films III. Theory
1976
Sputtering in the high-voltage electron microscope
1979
Atomic structure of the NiSi2/(111)Si interface
1982
Microstructure of InGaN Quantum Wells
1997
Measurement of the piezoelectric field across strained InGaN/GaN layers by electron holography
1999
Density of Deep Trap States in Oriented TiO2 Nanotube Arrays
2014
Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence
2001
Electron spin resonance and Raman studies of Mn-doped ZnO ceramics
2007
Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniques
1996
Misfit Dislocation Generation in InGaN Epilayers on Free-Standing GaN
2006
Misfit dislocation sources in epitaxial films part II: Growth of Pd on (111) Au substrates
1975
Controlling the size and alignment of ZnO microrods using ZnO thin film templates deposited by pulsed laser ablation
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The atomic structure of the NiSi2-(001)Si interface
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Misfit dislocation sources in epitaxial films part I: Growth of Pd on (001) Au substrates
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