C.-Y. Lu

Alternative Plasmonic Materials: Beyond Gold and Silver

Review: Semiconductor Piezoresistance for Microsystems

History and future perspective of the modern silicon bipolar transistor

Silicon bipolar device structures for digital applications: technology trends and future directions

A reduced-field design concept for high-performance bipolar transistors

Spatially Confined Chemistry:  Fabrication of Ge Quantum Dot Arrays

Laser processing of materials

FinFET-a self-aligned double-gate MOSFET scalable to 20 nm

The implementation of a reduced-field profile design for high-performance bipolar transistors

Millimeter-Wave Technology for Automotive Radar Sensors in the 77 GHz Frequency Band

Stretchable, Skin‐Mountable, and Wearable Strain Sensors and Their Potential Applications: A Review

Analysis of laser metal-cut energy process window

Variation in emitter diffusion depth by TiSi/sub 2/ formation on polysilicon emitters of Si bipolar transistors

Quantum Dot Bioconjugates for Ultrasensitive Nonisotopic Detection

Fundamentals of Modern VLSI Devices

Silicides and ohmic contacts

High Performance Silicon Nanowire Field Effect Transistors

Metallized ultra-shallow-junction device technology for sub-0.1 μm gate MOSFET's

On the Potential of SiGe HBTs for Extreme Environment Electronics

Explosion of poly-silicide links in laser programmable redundancy for VLSI memory repair

Computer-simulated explosion of poly-silicide links in laser-programmable redundancy for VLSI memory repair

Thermal oxidation of heavily boron-implanted polycrystalline-silicon films

Reverse short-channel effects on threshold voltage in submicrometer salicide devices

Limitation of spacer thickness in titanium salicide ULSI CMOS technology

The effects of rapid thermal processing on ultra-shallow junctions for deep sub-micron MOSFETs

Corrections to "A new conduction model for polycrystalline silicon films"

Decrease of gate oxide dielectric constant in tungsten polycide gate processes

Process limitation and device design tradeoffs of self-aligned TiSi/sub 2/ junction formation in submicrometer CMOS devices