Citation Impact
Citing Papers
Solar-to-hydrogen efficiency of more than 9% in photocatalytic water splitting
2023 StandoutNature
Demonstration of gate control of spin splitting in a high-mobility InAs/AlSb two-dimensional electron gas
2016 StandoutNobel
Alternative Plasmonic Materials: Beyond Gold and Silver
2013 Standout
Dependence of Resonance Energy Transfer on Exciton Dimensionality
2011 StandoutNobel
Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
2011 Standout
Measurement of AlInAsSb/GaInAsSb heterojunction band offset by photoluminescence spectroscopy
1999
A Reproducible LPE Growth of High-Quality In1-xGaxP1-yAsy Layers on GaAs by the Control of Phosphorus Vapor on the Substrate
1982 StandoutNobel
Effect of conduction-band nonparabolicity on quantized energy levels of a quantum well
1986
First-principles calculations for point defects in solids
2014 Standout
InAsSbP-InAs Superlattice Grown by Organometallic VPE Method
1980
Bond statistics and their influence on materials properties of III-V quaternary alloys of type (AB)III(CD)V
1988
Growth and characterization of the AlInGaN quaternary protective layer to suppress the thermal damage of InGaN multiple quantum wells
2008
Fabrication methods for InGaAsP/GaAs visible laser structure with AlGaAs burying layers grown by liquid-phase epitaxy
1986
Electroreflectance of indium gallium arsenide phosphide lattice matched to indium phosphide
1980
Band gaps and refractive indices of AlGaAsSb, GaInAsSb, and InPAsSb: Key properties for a variety of the 2–4-μm optoelectronic device applications
1987
InGaAsP quaternary alloys: Composition, refractive index and lattice mismatch
1980
Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
2007 Standout
Point defects and dopant diffusion in silicon
1989 Standout
Deep levels in InxGa1-xAsyP1-ygrown on (100) GaAs by LPE
1989 StandoutNobel
Growth and characterization of In-based nitride compounds
1997
Electroreflectance investigation of In1−xGaxAsyP1−y lattice-matched to InP
1980
Material parameters of In1−xGaxAsyP1−y and related binaries
1982
A reflectance anisotropy spectroscopy study of GaSb(100)c(2 × 6) surfaces prepared by Sb decapping
1996 StandoutNobel
Energy bandgap and lattice constant contours of II–VI quaternary alloys
1980
High optical quality AlInGaN by metalorganic chemical vapor deposition
1999
GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications
1985 Standout
Gallium antimonide device related properties
1993
The initial stage of LPE growth of InGaAsP on GaAs in the region of immiscibility
1986 StandoutNobel
Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates
2006 StandoutNobel
Organic Semiconductor Lasers
2007 Standout
High conduction-band offset of AlInAsSb/InGaAs multiple quantum wells grown by metalorganic vapor phase epitaxy
1999
Phosphors in phosphor-converted white light-emitting diodes: Recent advances in materials, techniques and properties
2010 Standout
OMVPE growth of the new semiconductor alloys GaP1−xSbx and InP1−xSbx
1988
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Probing the AlxGa1−xN spatial alloy fluctuation via UV-photoluminescence and Raman at submicron scale
2002 StandoutNobel
Quantum Monte Carlo simulations of solids
2001 Standout
Ellipsometric and thermoreflectance spectra of (AlxGa1−x)0.5In0.5P alloys
1996
Lattice parameter and optical-energy gap values for Cd x Zn y Mn z Te alloys
1983
Electronic properties of random alloys: Special quasirandom structures
1990 Standout
Calculation of the conduction band discontinuity for Ga0.47In0.53As/Al0.48In0.52As heterojunction
1984
Transparent conductors—A status review
1983 Standout
Thermodynamical Analyses and Luminescence Properties of Vapor-Grown ZnSxSe1-x
1987 StandoutNobel
Organic thin film materials producing novel blue laser
1998
Luminescence from AI0.28Ga0.72AS0.62P0.38 layers grown on GaAs0.61P0.39 substrates by liquid-phase epitaxy
1992
Pseudopotential band structure ofAl 1 − x − y Ga x In y As
1982
Effect of lattice mismatch between epitaxial layer and substrate on immiscibility of InGaAsP/GaAs LPE layers
1988 StandoutNobel
Energy bands of ternary alloy semiconductors: Coherent-potential-approximation calculations
1983
Built-in field control in alloyedc-plane III-N quantum dots and wells
2011
Optical waveguide simulations for the optimization of InGaN-based green laser diodes
2010 StandoutNobel
Gallium nitride materials - progress, status, and potential roadblocks
2002 StandoutNobel
Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels
2004 StandoutNobel
Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission
2012 StandoutNobel
Organometallic VPE Growth of InAs1-x-ySbxPy on InAs
1981
Liquid phase epitaxial Ga1-xInxAsySb1-y lattice-matched to (100) GaSb over the 1.71 to 2.33μm wavelength range
1985
Photothermal Nanomaterials: A Powerful Light-to-Heat Converter
2023 Standout
Diluted magnetic semiconductors
1988 Standout
Refractive index of AlGaInN alloys
1996
Band parameters for nitrogen-containing semiconductors
2003 Standout
Thermal Resistivity of Quaternary Solid Solution Ga xIn1–x – xAsyP1 – y Lattice‐matched to InP and GaAs
1982
LPE Growth and Surface Morphology of InxGa1-xAsyP1-y (y≤0.01) on (100) GaAs
1984 StandoutNobel
Organometallic vapor phase epitaxial growth of a new semiconductor alloy: GaP1−xSbx
1988
m -plane pure blue laser diodes with p-GaN/n-AlGaN-based asymmetric cladding and InGaN-based wave-guiding layers
2009 StandoutNobel
Transport through InGaAs-InP superlattices grown by chemical beam epitaxy
1989 StandoutNobel
Dopant local bonding and electrical activity near Si(001)-oxide interfaces
2005 StandoutNobel
Calculation of energy band gaps in quaternary iii/v alloys
1981
Energy Band Structure of In1‐xGaxAsyP1‐y Lattice Matched to InP by Means of the Line Profile Analysis of the Electroreflectance Spectra
1985
Energy bandgap of AlxGa1−xAs1−ySby and conduction band discontinuity of AlxGa1−xAs1−ySby/InAs and AlxGa1−xAs1−ySby/InGaAs heterostructures
1998
Growth by Liquid-Phase Epitaxy and Characterization of Al0.28Ga0.72As0.62P0.38
1992
Works of C.K. Williams being referenced
Energy bandgap and lattice constant contours of iii-v quaternary alloys of the form Ax By Cz D or ABx Cy Dz
1978
Ballistic transport in GaAs
1983
The modelling of silicon oxidation from 1 × 10−5 to 20 atmospheres
1987
Energy bandgap and lattice constant contours of iii–v quaternary alloys
1978