Citation Impact
Citing Papers
Performance and design of InGaAs/InP photodiodes for single-photon counting at 155 µm
2000
Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
2011 Standout
Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes
2010 StandoutNobel
Correlation between carrier localization and efficiency droop in AlGaN epilayers
2013
A review of Ga2O3 materials, processing, and devices
2018 Standout
Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers
2006 StandoutNobel
Advances in AlGaInN blue and ultraviolet light emitters
2002
Control of growth mode in Mg-doped GaN/AlN heterostructure
2014 StandoutNobel
High-Power III-Nitride Emitters for Solid-State Lighting
2002
Recombination dynamics of a 268nm emission peak in Al0.53In0.11Ga0.36N∕Al0.58In0.02Ga0.40N multiple quantum wells
2006 StandoutNobel
Controlling the recombination rate of semiconductor active layers via coupling to dispersion-engineered surface plasmons
2008
A Review of LED Drivers and Related Technologies
2017 Standout
Equivalent-Circuit Analysis for the Electroluminescence-Efficiency Problem of InGaN/GaN Light-Emitting Diodes
2008 StandoutNobel
200 nm deep ultraviolet photodetectors based on AlN
2006
High‐performance UV emitter grown on high‐crystalline‐quality AlGaN underlying layer
2009 StandoutNobel
Epitaxial lateral overgrowth of AlxGa1−xN (x>0.2) on sapphire and its application to UV-B-light-emitting devices
2006 StandoutNobel
Influence of High Temperature in the Growth of Low Dislocation Content AlN Bridge Layers on Patterned 6H-SiC Substrates by Metalorganic Vapor Phase Epitaxy
2007 StandoutNobel
Epitaxial Lateral Overgrowth of High Al Composition AlGaN Alloys on Deep Grooved SiC Substrates
2005
Localization potentials in AlGaN epitaxial films studied by scanning near-field optical spectroscopy
2011
Emission Wavelength Dependence of Internal Quantum Efficiency in InGaN Nanowires
2013 StandoutNobel
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
2019 StandoutNobel
Highly efficient broad‐area blue and white light‐emitting diodes on bulk GaN substrates
2008 StandoutNobel
Characterization of nanometer scale compositionally inhomogeneous AlGaN active regions on bulk AlN substrates
2010
Demonstration of a low-noise near-infrared photon counter with multiphoton discrimination
2003 StandoutNobel
Optical properties of extended and localized states in m-plane InGaN quantum wells
2013 StandoutNobel
Single-photon detectors for optical quantum information applications
2009 Standout
Electroluminescence efficiency of (1\,0\,\bar{1}\,0) -oriented InGaN-based light-emitting diodes at low temperature
2008 StandoutNobel
Control of the Detection Wavelength in AlGaN/GaN-Based Hetero-Field-Effect-Transistor Photosensors
2013 StandoutNobel
High Output Power from 260 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Improved Thermal Performance
2011
High‐efficiency AlGaN based UV emitters grown on high‐crystalline‐quality AlGaN using grooved AlN layer on sapphire substrate
2007 StandoutNobel
Near-field investigation of spatial variations of (202¯1¯) InGaN quantum well emission spectra
2013 StandoutNobel
Demonstration of Flame Detection in Room Light Background by Solar-Blind AlGaN PIN Photodiode
2001 StandoutNobel
Optical polarization characteristics ofm-oriented InGaN/GaN light-emitting diodes with various indium compositions in single-quantum-well structure
2008 StandoutNobel
Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation
2009 StandoutNobel
Electrical and structural properties of AlGaN/AlGaN superlattice structures grown by metal-organic chemical vapor deposition
2003
Experimental technique to correlate optical excitation intensities with electrical excitation intensities for semiconductor optoelectronic device characterization
2008 StandoutNobel
Solar-blind AlGaN-based inverted heterostructure photodiodes
2000
Electrogenerated Chemiluminescence and Its Biorelated Applications
2008 Standout
Effects of exciton localization on internal quantum efficiency of InGaN nanowires
2013 StandoutNobel
A review of photodetectors for sensing light-emitting reporters in biological systems
2003
Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence
2014 StandoutNobel
Electroluminescence from a Mixed Red−Green−Blue Colloidal Quantum Dot Monolayer
2007 StandoutNobel
Internal quantum efficiency in AlGaN with strong carrier localization
2012
Development of high efficiency 255–355 nm AlGaN‐based light‐emitting diodes
2011 StandoutNobel
Lateral epitaxial overgrowth of aluminum nitride on patterned silicon carbide substrates by hydride vapor phase epitaxy
2007 StandoutNobel
AlGaN/AlGaN UV light-emitting diodes grown on sapphire by metalorganic chemical vapor deposition
2002
Quantum-confined Stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes
2008 StandoutNobel
High gain Ga_2O_3 solar-blind photodetectors realized via a carrier multiplication process
2015
Void assisted dislocation reduction in AlN and AlGaN by high temperature MOVPE
2007 StandoutNobel
III–Nitride UV Devices
2005
Quantum cryptography
2002 Standout
Novel UV devices on high-quality AlGaN using grooved underlying layer
2009 StandoutNobel
High quality AlN grown on SiC by metal organic chemical vapor deposition
2008 StandoutNobel
On Driving Techniques for LEDs: Toward a Generalized Methodology
2009
Band parameters for nitrogen-containing semiconductors
2003 Standout
Dielectric function spectra of GaN, AlGaN, and GaN/AlGaN heterostructures
2001
Efficiency of light emission in high aluminum content AlGaN quantum wells
2009
Combination of Indium–Tin Oxide and SiO2/AlN Dielectric Multilayer Reflective Electrodes for Ultraviolet-Light-Emitting Diodes
2013 StandoutNobel
Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy
2006 StandoutNobel
Photoresponse and Defect Levels of AlGaN/GaN Heterobipolar Phototransistor Grown on Low-Temperature AlN Interlayer
2001 StandoutNobel
Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes
2014 Standout
Works of C.J. Collins being referenced
AlGaN/AlGaN double-heterojunction ultraviolet light-emittingdiodesgrown by metal organic chemical vapour deposition
2001
Defect density dependence of luminescence efficiency and lifetimes in AlGaN active regions exhibiting enhanced emission from nanoscale compositional inhomogeneities
2006
Enhanced room-temperature luminescence efficiency through carrier localization in AlxGa1−xN alloys
2005
High Quantum Efficiency at Low Bias AlxGa1-xN p-i-n Photodiodes
2001
Solar-blind Al x Ga 1- x N-basedmetal-semiconductor-metalultraviolet photodetectors
2000
GaN avalanche photodiodes
2000
High-performance back-illuminated solar-blind AlGaNmetal-semiconductor-metal photodetectors
2000
Improved ultraviolet quantum efficiency using a semitransparent recessed window AlGaN/GaN heterojunction p-i-n photodiode
1999
High power ultraviolet light emitting diodes based on GaN∕AlGaN quantum wells produced by molecular beam epitaxy
2006
Growth of AlGaN alloys exhibiting enhanced luminescence efficiency
2006
32/spl times/32 ultraviolet Al/sub 0.1/Ga/sub 0.9/N/GaN p-i-n photodetector array
2000