Citation Impact
Citing Papers
Is Religiosity an Important Factor in Influencing the Intention to Undertake Islamic Home Financing in Klang Valley
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Patterns of Hedonic Consumption Over Time
1997 StandoutNobel
Strained layer heterostructures, and their applications to MODFETs, HBTs, and lasers
1993
GaInP/AlInP Quantum Well Structures and Double Heterostructure Lasers Grown by Molecular Beam Epitaxy on (100) GaAs
1988
Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
1994 Standout
Two-Dimensional Photonic Band-Gap Defect Mode Laser
1999 StandoutScience
Vertical-cavity surface-emitting lasers: Design, growth, fabrication, characterization
1991
A research review: involving the African American family in anti-hypertensive medication management.
1997
Recent results and latest views on microcavity LEDs
2004 StandoutNobel
Resonant cavity light-emitting diode
1992
Observation of the coupled exciton-photon mode splitting in a semiconductor quantum microcavity
1992 Standout
Ultrathin InAs/GaAs single quantum well structures grown by atomic layer epitaxy
1986
Atomic layer epitaxy of compound semiconductors with metalorganic precursors
1989
Semiconductor amplifiers and lasers with tapered gain regions
1996
Magnetic switch for integrated atom optics
2001 StandoutNobel
Organic Semiconductor Lasers
2007 Standout
Structural and luminescent properties of green emitting SrGa2S4:Eu thin films prepared by RF-sputtering
2003
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
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Band parameters for III–V compound semiconductors and their alloys
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Guiding laser-cooled atoms in hollow-core fibers
2000 StandoutNobel
Nickel-Based Superalloys for Advanced Turbine Engines: Chemistry, Microstructure and Properties
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Two-dimensional photonic-bandgap structures operating at near-infrared wavelengths
1996 StandoutNature
Guiding Neutral Atoms Around Curves with Lithographically Patterned Current-Carrying Wires
1999 StandoutNobel
Resonant cavity enhanced photonic devices
1995
Si incorporation and Burstein–Moss shift in n-type GaAs
1999
Efficient, narrow-linewidth distributed-Bragg-reflector surface-emitting laser with periodic gain
1989
Lasing in random media
2003 Standout
Optical properties of metallic films for vertical-cavity optoelectronic devices
1998 Standout
Carrier Injections in Nitride-Based Light Emitting Diodes Including Two Active Regions with Mg-Doped Intermediate Layers
2013 StandoutNobel
Microstructured semiconductor lasers for high-speed information processing
1994 Nature
Gallium nitride based microcavity light emitting diodes with 2λ effective cavity thickness
2007 StandoutNobel
Photoluminescence of AlxGa1−xAs alloys
1994
Scintillation detectors for x-rays
2006 Standout
Works of C.F. Schaus being referenced
The processing and characterization of CaGa2S4:Ce blue phosphor by MOCVD
1997
Resonant periodic gain surface-emitting semiconductor lasers
1989
High-power spatially coherent operation of unstable resonator semiconductor lasers with regrown lens trains
1992
Zinc and tellurium doping in GaAs and AlxGa1−xAs grown by MOCVD
1991
Inverting and latching optical logic gates based on the integration of vertical-cavity surface-emitting lasers and photothyristors
1992
Novel wavelength-resonant optoelectronic structure and its application to surface-emitting semiconductor lasers
1988
OMVPE growth of GaxIn1−xP/GaAs(AlyGa1−yAs) heterostructures for optical and electronic device applications
1986
Improved GaAs/AlGaAs quantum-well heterostructures by organometallic vapor-phase epitaxy
1986
Ultrafast operation of optically pumped resonant periodic gain GaAs surface emitting lasers
1990
Photoluminescence of OMVPE grown AlGaAs: The effect of composition, doping and the substrate
1984
Surface-emitting, multiple quantum well GaAs/AlGaAs laser with wavelength-resonant periodic gain medium
1988
Lasing threshold in quantum well surface-emitting lasers: Many-body effects and temperature dependence
1989
Gain characteristics of strained quantum well lasers
1990
Cascadable, latching photonic switch with high optical gain by the monolithic integration of a vertical-cavity surface-emitting laser and a pn-pn photothyristor
1991