Citation Impact
Citing Papers
Complex resonances and trapped modes in ducted domains
2007
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
PDFfit2 and PDFgui: computer programs for studying nanostructure in crystals
2007 Standout
A large-scale study of the ultrawideband microwave dielectric properties of normal, benign and malignant breast tissues obtained from cancer surgeries
2007 Standout
Control of Threshold Voltage of Enhancement-Mode AlxGa1-xN/GaN Junction Heterostructure Field-Effect Transistors Using p-GaN Gate Contact
2007 StandoutNobel
A multilevel algorithm for solving a boundary integral equation of wave scattering
1994
Contact mechanisms and design principles for nonalloyed ohmic contacts to n-GaN
2004
Structural and Electroluminescence Characteristics of Nonpolar Light-Emitting Diodes Fabricated on Lateral Epitaxially Overgrown a-Plane GaN
2006 StandoutNobel
A review of Ga2O3 materials, processing, and devices
2018 Standout
Luminescence properties of defects in GaN
2005 Standout
A multilevel matrix decomposition algorithm for analyzing scattering from large structures
1996
Insulating Pockets in Metallic LaNiO3
2015 StandoutNobel
A study of wavelets for the solution of electromagnetic integral equations
1995
GaN-Based RF Power Devices and Amplifiers
2008 Standout
Chemistry of Iron Sulfides
2007 Standout
Photoacoustic imaging in biomedicine
2006 Standout
T-matrix computations of light scattering by nonspherical particles: A review
1996
High performance microwave power GaN/AlGaN MODFETsgrown by RF-assisted MBE
2000
Light Absorption by Carbonaceous Particles: An Investigative Review
2005 Standout
GaN/AlGaN high electron mobility transistors withf τ of 110 GHz
2000
Ohmic Cathode Electrode on the Backside of m-Plane and (2021) Bulk GaN Substrates for Optical Device Applications
2011 StandoutNobel
Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer
2009 StandoutNobel
Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study
2000 StandoutNobel
Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates
2005 StandoutNobel
Bound states in the continuum
2016 Standout
Etching of Ga-face and N-face GaN by Inductively Coupled Plasma
2006 StandoutNobel
AlGaN/GaN HEMTs-an overview of device operation and applications
2002 Standout
Effects of low energy e‐beam irradiation on cathodoluminescence from GaN
2012 StandoutNobel
Ohmic contacts to Gallium Nitride materials
2016
GaN: Processing, defects, and devices
1999
Nonpolar m-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation
2006 StandoutNobel
2014 StandoutNobel
Multilevel fast multipole algorithm for electromagnetic scattering by large complex objects
1997 Standout
Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy
1999
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
1999 Standout
Schottky barrier height and nitrogen–vacancy-related defects in Ti alloyed Ohmic contacts to n-GaN
2003
High performance GaN/AlGaN MODFETsgrown by RF-assisted MBE
1998
Advantages of AlN/GaN Metal Insulator Semiconductor Field Effect Transistor using Wet Chemical Etching with Hot Phosphoric Acid
2001 StandoutNobel
Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates
2005 StandoutNobel
AIM: Adaptive integral method for solving large‐scale electromagnetic scattering and radiation problems
1996 Standout
Accuracy of pair distribution function analysis applied to crystalline and non-crystalline materials
1992
A clinical prototype for active microwave imaging of the breast
2000
Polarization charges and polarization-induced barriers in AlxGa1−xN/GaN and InyGa1−yN/GaN heterostructures
2001 StandoutNobel
Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain
2000 StandoutNobel
High On/Off Ratio in Enhancement-Mode AlxGa1-xN/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact
2006 StandoutNobel
A new version of the Fast Multipole Method for the Laplace equation in three dimensions
1997 Standout
Contact mechanisms and design principles for alloyed ohmic contacts to n-GaN
2004
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
2000 StandoutNobel
Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
2004 StandoutNobel
Short- to Medium-Range Atomic Order and Crystallite Size of the Initial FeS Precipitate from Pair Distribution Function Analysis
2005
Works of C.C. Lu being referenced
Temperature and doping-dependent resistivity of Ti/Au/Pd/Au multilayer ohmic contact to n-GaN
2002
Fast algorithm for solving hybrid integral equations
1993
A succinct way to diagonalize the translation matrix in three dimensions
1997
Efficient computation of three-dimensional scattering of vector electromagnetic waves
1994
The application of recursive aggregate T‐matrix algorithm in the Monte Carlo simulations of the extinction rate of random distribution of particles
1995
AlGaN/GaN double heterostructure channel modulationdoped field effect transistors (MODFETs)
1997
The recursive aggregate interaction matrix algorithm for multiple scatterers
1995
Nonlinear diffraction tomography: The use of inverse scattering for imaging
1996
The use of Huygens' equivalence principle for solving the volume integral equation of scattering
1993
Low-resistance Ti/Al/Ti/Au multilayer ohmic contact to n-GaN
2001
Fast Fourier transforms for space groups containing rotation axes of order three and higher
1992