C. Vannuffel

Study of HfO2 films deposited on strained Si1−xGex layers by atomic layer deposition

Cu and Cu-Based Nanoparticles: Synthesis and Applications in Catalysis

The mechanical behavior of and deformation mechanisms in Al2Ti

Optical transitions in GaInNAs/GaAs multi-quantum wells with varying N content investigated by photoluminescence excitation spectroscopy

Microstructure Control of Zn/ZnO Core/Shell Nanoparticles and Their Temperature-Dependent Blue Emissions

Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick AlxGa1−xN layers

Blue Luminescence of ZnO Nanoparticles Based on Non‐Equilibrium Processes: Defect Origins and Emission Controls

Magneto-optical and light-emission properties of III As N semiconductors

Cerium dioxide buffer layers at low temperature by atomic layer deposition

High-temperature structural intermetallics

Effect of nitrogen on the temperature dependence of the energy gap inInxGa1−xAs1−yNy/GaAssingle quantum wells

Evolution of the Single-Nanocrystal Photoluminescence Linewidth with Size and Shell: Implications for Exciton–Phonon Coupling and the Optimization of Spectral Linewidths

Spectroscopy of Colloidal Semiconductor Core/Shell Nanoplatelets with High Quantum Yield

Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process

GaNAsSb: how does it compare with other dilute III V-nitride alloys?

On the origin of carrier localization in Ga1−xInxNyAs1−y/GaAs quantum wells

Interband transitions of quantum wells and device structures containing Ga(N, As) and (Ga, In)(N, As)

Effects of exciton localization on internal quantum efficiency of InGaN nanowires

Influence of dual incorporation of In and N on the luminescence of GaInNAs/GaAs single quantum wells

Copper Nanowire–Graphene Core–Shell Nanostructure for Highly Stable Transparent Conducting Electrodes

Strong localization effect in temperature dependence of violet-blue emission from ZnO nanoshells

Band parameters for nitrogen-containing semiconductors

Growth and Characterization of Thick GaAsN Epilayers and GaInNAs/GaAs Multiquantum Wells

TiAl2: A reentrant phase in the TiAl system

Evidence of strong carrier localization below 100 K in a GaInNAs/GaAs single quantum well

A combined x-ray specular reflectivity and spectroscopic ellipsometry study of CeO2/yttria-stabilized-zirconia bilayers on Si(100) substrates

Growth and characterization of GaInNAs/GaAs multiquantum wells

SiGe growth kinetics and doping in reduced pressure-chemical vapor deposition

XPS, Raman spectroscopy, X‐ray diffraction, specular X‐ray reflectivity, transmission electron microscopy and elastic recoil detection analysis of emissive carbon film characterization