C. Starck

High efficiency white LEDs with single-crystal ZnO current spreading layers deposited by aqueous solution epitaxy

Low-threshold 1.3-μm wavelength, InGaAsP strained-layer multiple quantum well lasers grown by gas source molecular beam epitaxy

Electrical Design Optimization of Single-Mode Tunnel-Junction-Based Long-Wavelength VCSELs

Silicon microring resonators

GaInN-Based Tunnel Junctions in n–p–n Light Emitting Diodes

Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching

GaN tunnel junction as a current aperture in a blue surface-emitting light-emitting diode

The use of synchrotron radiation techniques in the characterization of strained semiconductor heterostructures and thin films

Growth of abrupt InGaAs(P)/In(GaAs)P heterointerfaces by gas source molecular beam epitaxy

Band parameters for III–V compound semiconductors and their alloys

Ultrathin Organic Films Grown by Organic Molecular Beam Deposition and Related Techniques

Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit

Enhanced modulation bandwidth for strain-compensated InGaAlAs-InGaAsP MQW lasers

Over 1000 channel nitride-based micro-light-emitting diode arrays with tunnel junctions

Photocurrent spectroscopy and study of subband parameters for heavy holes in nanoscale In0.53Ga0.47As/In0.52Al0.48As multiquantum well structures

Gallium-nitride-based microcavity light-emitting diodes with air-gap distributed Bragg reflectors

Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions

Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission

Novel design scheme for high-speed MQW lasers with enhanced differential gain and reduced carrier transport effect

Investigation of effect of strain-compensated structure and compensation limit in strained-layer multiple quantum wells

Electrically-pumped, single-epitaxial VCSELs at1.55 µm with Sb-based mirrors

High temperature continuous-wave operation of 1.3- and 1.55-μm VCSELs with InP/Air-Gap DBRs

Disclosing the Complex Structure of UiO-66 Metal Organic Framework: A Synergic Combination of Experiment and Theory

1-mW CW-RT monolithic VCSEL at 1.55 μm

Gas source molecular beam epitaxy of alternated tensile / compressive strained GaInAsP multiple quantum wells emitting at 1.5 μm

Energy gaps in strainedIn1−xGaxAs/In1−yGayAszP1−zquantum wells grown on (001) InP

Strained quaternary GaInAsP quantum well lasee emitting at 1.5 μm grown by gas source molecular beam epitaxy

Metamorphic DBR and tunnel-junction injection. A CW RT monolithic long-wavelength VCSEL

Lateral modulations in zero-net-strained GaInAsP multilayers grown by gas source molecular-beam epitaxy

RT pulsed operation of metamorphic VCSEL at 1.55µm

GaAlAs/GaAs metamorphic Bragg mirror for long wavelengthVCSELs