C. Martı́nez

Excitation density dependence of radiative and nonradiative recombination lifetimes in InGaN/GaN multiple quantum wells

A review of Ga2O3 materials, processing, and devices

Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures

Correlation between Device Performance and Defects in GaInN-Based Solar Cells

High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates

Impact of high-temperature metalorganic vapor phase epitaxial growth of AlGaN-based UV-A, UV-B and UV-C quantum wells on the improvement of their internal quantum efficiency

Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells

High Internal Quantum Efficiency Blue-Green Light-Emitting Diode with Small Efficiency Droop Fabricated on Low Dislocation Density GaN Substrate

Effects of exciton localization on internal quantum efficiency of InGaN nanowires

Concentrating Properties of Nitride-Based Solar Cells Using Different Electrodes

Fabrication of InGaN/GaN Multiple Quantum Wells on (1101) GaN

Photoinduced entropy of InGaN/GaN p-i-n double-heterostructure nanowires

Progress and Prospect of the Growth of Wide-Band-Gap Group III Nitrides: Development of the Growth Method for Single-Crystal Bulk GaN

Combination of Indium–Tin Oxide and SiO₂/AlN Dielectric Multilayer Reflective Electrodes for Ultraviolet-Light-Emitting Diodes

Determination of relative internal quantum efficiency in InGaN∕GaN quantum wells