Citation Impact

Citing Papers

Effects of Si ion implantation and post-annealing on yellow luminescence from GaN
2002
Monolithically integrated mid-infrared lab-on-a-chip using plasmonics and quantum cascade structures
2014
Mid-infrared surface transmitting and detecting quantum cascade device for gas-sensing
2016
Alternative Plasmonic Materials: Beyond Gold and Silver
2013 Standout
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Multi-mW, few-cycle mid-infrared continuum spanning from 500 to 2250 cm−1
2017 StandoutNobel
Atom probe tomography study of Mg-doped GaN layers
2014 StandoutNobel
Field-resolved infrared spectroscopy of biological systems
2020 StandoutNatureNobel
High-repetition-rate picosecond pump laser based on a Yb:YAG disk amplifier for optical parametric amplification
2009 StandoutNobel
Terahertz quantum-cascade lasers
2007 Standout
Luminescence of Acceptors in Mg-Doped GaN
2013 StandoutNobel
Measurement of polarization charge and conduction-band offset at InxGa1−xN/GaN heterojunction interfaces
2004
Effects of interface states and temperature on the C-V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors
2008
The influence of Si-doping to the growth rate and yellow luminescence of GaN grown by MOCVD
2001
Intra-pulse difference-frequency generation of mid-infrared (27–20  μm) by random quasi-phase-matching
2019 StandoutNobel
Origin of the red luminescence in Mg-doped GaN
2006
Terahertz quantum cascade lasers with large wall-plug efficiency
2007
Multi-watt, multi-octave, mid-infrared femtosecond source
2018 StandoutNobel
Metastability of the UV luminescence in Mg-doped GaN layers grown by MOVPE on quasi-bulk GaN templates
2007 StandoutNobel
Fifteen Years of Work on Thin-Disk Lasers: Results and Scaling Laws
2007
Mg-acceptor activation mechanism and transport characteristics in p-type InGaN grown by metalorganic vapor phase epitaxy
2003
Luminescence properties of defects in GaN
2005 Standout
Effect of doping and polarization on carrier collection in InGaN quantum well solar cells
2011 StandoutNobel
Influence of polarization fields and depletion fields on photoluminescence of AlGaN/GaN multiple quantum well structures
2003 StandoutNobel
Pyramidal defects in metalorganic vapor phase epitaxial Mg doped GaN
2000
Photoluminescence of Mg-doped GaN grown by metalorganic chemical vapor deposition
2003
The doping process and dopant characteristics of GaN
2002
Non-polar m-plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors
2013 StandoutNobel
Structural Defects and Relation with Optoelectronic Properties in Highly Mg-Doped GaN
2002
Quantized states inGa1−xInxN/GaNheterostructures and the model of polarized homogeneous quantum wells
2000 StandoutNobel
GaN/AlGaN intersubband optoelectronic devices
2009
Structural, electrical, and optical properties of defects in Si-doped GaN grown by molecular-beam epitaxy on hydride vapor phase epitaxy GaN on sapphire
2002
Luminescence related to high density of Mg-induced stacking faults in homoepitaxially grown GaN
2011 StandoutNobel
Effect of Oxygen on the Activation of Mg Acceptor in GaN Epilayers Grown by Metalorganic Chemical Vapor Deposition
2000
Short-wavelength (λ≈3.05μm) InP-based strain-compensated quantum-cascade laser
2007
Selective excitation and thermal quenching of the yellow luminescence of GaN
1999
GaInN-Based Tunnel Junctions in n–p–n Light Emitting Diodes
2013 StandoutNobel
Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire
2003 StandoutNobel
Characterization of Red Emission in Nominally Undoped Hydride Vapor Phase Epitaxy GaN
2001
Advances in Mid-Infrared Spectroscopy for Chemical Analysis
2016
Selective excitation of the yellow luminescence of GaN
1999
Mg acceptors in GaN: Dependence of the g-anisotropy on the doping concentration
1999 StandoutNobel
GaN-on-Si Power Technology: Devices and Applications
2017 Standout
Imaging-based molecular barcoding with pixelated dielectric metasurfaces
2018 StandoutScience
Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition
2009 StandoutNobel
Time- and Temperature-Resolved Photoluminescence of GaN:Mg Epitaxial Layers Grown by MOVPE
2001
Chemical origin of the yellow luminescence in GaN
2002
Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates
2008 StandoutNobel
Compensation effect of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy
2010 StandoutNobel
Green and red emission in Ca implanted GaN samples
2001
Optical metastability in undoped GaN grown on Ga-rich GaN buffer layers
2002
Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition
2002
Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique
2014 StandoutNobel
Hole conductivity and compensation in epitaxial GaN:Mg layers
2000
ODMR of bound excitons in Mg-doped GaN
1999
Properties of the main Mg-related acceptors in GaN from optical and structural studies
2014 StandoutNobel
Effects of built-in polarization on InGaN-GaN vertical-cavity surface-emitting lasers
2005 StandoutNobel
Simultaneous observation of luminescence and dissociation processes of Mg–H complex for Mg-doped GaN
2002 StandoutNobel
Blue emission band in compensated GaN:Mg codoped with Si
2003
Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101¯1¯) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
2010 StandoutNobel
Photoluminescence band near 2.9 eV in undoped GaN epitaxial layers
2000
Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers
2001
Individual Roles of Atoms and Ions during Hydrogen Plasma Passivation of Surface Defects on GaN Created by Plasma Etching
2012 StandoutNobel
Nature of the 2.8-eV photoluminescence band in Si-doped GaN
2000
Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films
2009 StandoutNobel
High hole concentration in Mg-doped a-plane Ga1−xInxN (<x<0.30) grown on r-plane sapphire substrate by metalorganic vapor phase epitaxy
2008 StandoutNobel
Transient photoluminescence of defects in undoped GaN prepared by metal organic vapor phase epitaxy
1999
Compensation mechanism in MOCVD and MBE grown GaN:Mg
2001
Over 1000 channel nitride-based micro-light-emitting diode arrays with tunnel junctions
2014 StandoutNobel
Low-etch-pit-density GaN substrates by regrowth on free-standing GaN films
2002
Optically detected magnetic resonance of shallow donor – shallow acceptor and deep (2.8–3.2eV) recombination from Mg-doped GaN
1999
Efficient femtosecond mid-infrared generation based on a Cr:ZnS oscillator and step-index fluoride fibers
2019 StandoutNobel
What determines the emission peak energy of the blue luminescence in highly Mg-doped p-GaN?
2001
Optoelectronic properties of GaN epilayers in the region of yellow luminescence
2006
Field-dependent carrier decay dynamics in strainedInxGa1−xN/GaNquantum wells
2002
Pressure dependence of the blue luminescence in Mg-doped GaN
2000
Gallium nitride materials - progress, status, and potential roadblocks
2002 StandoutNobel
Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region
2014 StandoutNobel
Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates
2007 StandoutNobel
Impurity states are the origin of yellow-band emission in GaN structures produced by epitaxial lateral overgrowth
1999
Quantum-confined Stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes
2008 StandoutNobel
Development of a Joule‐class Yb:YAG amplifier and its implementation in a CPA system generating 1 TW pulses
2014 StandoutNobel
Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯2) semipolar versus (0001) polar planes
2014 StandoutNobel
Optically detected magnetic resonance of the red and near-infrared luminescence in Mg-doped GaN
2001
Origin of electrons emitted into vacuum from InGaN light emitting diodes
2014 StandoutNobel
Polarization charge screening and indium surface segregation in (In,Ga)N/GaN single and multiple quantum wells
2000
First-principles calculations for defects and impurities: Applications to III-nitrides
2004 Standout
Influence of high Mg doping on the microstructural and optoelectronic properties of GaN
2002
Nature of yellow luminescence band in GaN grown on Si substrate
2014 StandoutNobel
Dominant shallow acceptor enhanced by oxygen doping in GaN
2006 StandoutNobel
GaN/AlGaN waveguide quantum cascade photodetectors at λ ≈ 1.55 μm with enhanced responsivity and ∼40 GHz frequency bandwidth
2013
Mg in GaN: the structure of the acceptor and the electrical activity
2003
In Ga As ∕ Al As Sb ∕ In P quantum cascade lasers operating at wavelengths close to 3μm
2007
The Red (1.8 eV) Luminescence in Epitaxially Grown GaN
2000

Works of C. Manz being referenced

Room-temperature short-wavelength (λ∼3.7–3.9μm) GaInAs∕AlAsSb quantum-cascade lasers
2006
Barrier‐ and in‐well pumped GaSb‐based 2.3 µm VECSELs
2007
In x Ga 1−x N/GaN band offsets as inferred from the deep, yellow-red emission band in InxGa1−xN
1999
Quantum Cascade Detectors
2009
Midinfrared quantum cascade detector with a spectrally broad response
2008
Ga In As ∕ Al As Sb quantum-cascade lasers operating up to 400K
2005
Origin of defect-related photoluminescence bands in doped and nominally undoped GaN
1999
Distributed-feedback GaInAs∕AlAsSb quantum-cascade lasers operating at 300K
2006
In Ga As ∕ Al As Sb quantum cascade detectors operating in the near infrared
2007
Electronic and thermal properties of Sb-based QCLs operating in the first atmospheric window
2007
Mid-infrared quantum cascade detectors for applications in spectroscopy and pyrometry
2010
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