Citation Impact
Citing Papers
Defects in Silicon Carbide Whiskers
1984
X-ray photoelectron diffraction from (3×3) and (√3×√3)R 30° (0001)Si 6H–SiC surfaces
1998 StandoutNobel
Piezoelectricity: old effect, new thrusts
1995
Temperature dependence of electrical properties of non-doped and nitrogen-doped beta-SiC single crystals grown by chemical vapor deposition
1986
Progress in silicon carbide semiconductor electronics technology
1995
Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
1996 Standout
Effect of Substrate Orientation on Interfacial and Bulk Character of Chemically Vapor Deposited Monocrystalline Silicon Carbide Thin Films
1990 StandoutNobel
Hall measurements as a function of temperature on monocrystalline SiC thin films
1990 StandoutNobel
Correlation of steady-state creep and changing microstructure in polycrystalline SiC sintered with powder derived via gaseous reactants in an are plasma
1988 Nobel
Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
1994 Standout
Chemical vapor deposition and characterization of 6H-SiC thin films on off-axis 6H-SiC substrates
1988 StandoutNobel
Growth and morphology of 6H-SiC epitaxial layers by CVD
1978
Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide
1991 StandoutNobel
Cleaning of AlN and GaN surfaces
1998 StandoutNobel
Schottky barrier diodes on 3C-SiC
1985
Donor binding energies determined from temperature dependence of photoluminescence spectra in undoped and aluminum-doped beta SiC films
1988
Thermodynamic Calculations for the Chemical Vapor Deposition of Silicon Carbide
1983 StandoutNobel
SiC devices: physics and numerical simulation
1994
Kinetics and Mechanisms of High-Temperature Creep in Silicon Carbide: I, Reaction-Bonded
1984 StandoutNobel
Thermodynamic Calculations for the Chemical Vapor Deposition of Silicon Nitride
1983 StandoutNobel
Growth rate, surface morphology, and defect microstructures of β–SiC films chemically vapor deposited on 6H–SiC substrates
1989 StandoutNobel
Thermal Oxidation of SiC and Electrical Properties of Al–SiO2–SiC MOS Structure
1982 StandoutNobel
Structural and morphological peculiarities of the epitaxial layers and monocrystals of silicon carbide highly doped by nitrogen
1976
Advanced Thermoelectric Design: From Materials and Structures to Devices
2020 Standout
C-V characteristics of SiC metal-oxide-semiconductor diode with a thermally grown SiO2 layer
1981 StandoutNobel
Diffusion‐Accommodated Grain Boundary Sliding and Dislocation Glide in the Creep of Sintered Alpha Silicon Carbide
1992 StandoutNobel
Brillouin scattering study of bulk GaN
1999 StandoutNobel
High-temperature electrical properties of 3C-SiC epitaxial layers grown by chemical vapor deposition
1984
Temperature dependence of the current-voltage characteristics of metal-semiconductor field-effect transistors in n-type β-SiC grown via chemical vapor deposition
1987 StandoutNobel
Microstructure and Growth Model for Rice‐Hull‐Derived SiC Whiskers
1988
The effects of N+ dose in implantation into 6h-sic epilayers
1995
Some new features of the photoluminescence of SiC(6H), SiC(4H), and SiC(15R)
1994
Production of large-area single-crystal wafers of cubic SiC for semiconductor devices
1983
Pressure-induced phase transition in SiC
1993 StandoutNobel
Epitaxial growth of β-SiC thin films on 6H α-SiC substrates via chemical vapor deposition
1986 StandoutNobel
Steady-state creep of hot-pressed SiC whisker-reinforced silicon nitride
1990 StandoutNobel
Al and B ion-implantations in 6H- and 3C-SiC
1995
Interface structures in beta-silicon carbide thin films
1987 StandoutNobel
Theoretically predicted and experimentally determined effects of the Si/(Si+C) gas phase ratio on the growth and character of monocrystalline beta silicon carbide films
1986 StandoutNobel
High-temperature depletion-mode metal-oxide-semiconductor field-effect transistors in beta-SiC thin films
1987 StandoutNobel
Schottky-barrier field-effect transistors of 3C-SiC
1986
Microstructural characterization of ?REFEL? (reaction-bonded) silicon carbides
1978
UV photoemission study of heteroepitaxial AlGaN films grown on 6H-SiC
1996 StandoutNobel
Prospects for device implementation of wide band gap semiconductors
1992
Characterization of device parameters in high-temperature metal-oxide-semiconductor field-effect transistors in β-SiC thin films
1988 StandoutNobel
Metal Schottky barrier contacts to alpha 6H-SiC
1992 StandoutNobel
Scanning Tunneling Microscopy of Cubic Silicon Carbide Surfaces
1990 StandoutNobel
Temperature dependence of electrical properties of n- and p-type 3C-SiC
1987
Deposition of highly resistive, undoped, and p-type, magnesium-doped gallium nitride films by modified gas source molecular beam epitaxy
1993 StandoutNobel
Some aspects of polytypism in crystals
1978
Formation energies, abundances, and the electronic structure of native defects in cubic SiC
1988 StandoutNobel
Handbook of SiC properties for fuel performance modeling
2007 Standout
Operation of Schottky-barrier field-effect transistors of 3C-SiC up to 400 °C
1987
Imperfect Oriented Attachment: Dislocation Generation in Defect-Free Nanocrystals
1998 StandoutScience
Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction
1998 StandoutNobel
Behavior of inversion layers in 3C silicon carbide
1986
Ferroelectric Ceramics: History and Technology
1999 Standout
Thermal oxidation of 3C silicon carbide single-crystal layers on silicon
1984
Growth of 6H-SiC on CVD-Grown 3C-SiC Substrates
1989
The Preference of Silicon Carbide for Growth in the Metastable Cubic Form
1991
Behavior of ion-implanted junction diodes in 3C SiC
1987
Aluminum nitride/silicon carbide multilayer heterostructure produced by plasma-assisted, gas-source molecular beam epitaxy
1993 StandoutNobel
Sublimation growth of SiC single crystalline ingots on faces perpendicular to the (0001) basal plane
1994
Electron Microscopy of Defects in Epitaxical β‐SiC Thin Films Grown on Silicon and Carbon {0001} Faces of α‐SiC Substrates
1990 StandoutNobel
Comparative electron spectroscopic studies of surface segregation on SiC(0001) and SiC(0001)
1986
Electrical properties of ion-implanted p-n junction diodes in β-SiC
1988 StandoutNobel
Defects in neutron irradiated SiC
1987 StandoutNobel
Sodium/Calcium Exchange: Its Physiological Implications
1999 Standout
Microstructural, chemical, and electrical characterization of the beta silicon carbide thin-film silicon substrate interface
1985 StandoutNobel
Polytypic transformations in silicon carbide
1983
Breakdown field in vapor-grown silicon carbide p-n junctions
1977
Surface morphology of cubic SiC(100) grown on Si(100) by chemical vapor deposition
1986
Deposition and doping of silicon carbide by gas-source molecular beam epitaxy
1997 StandoutNobel
Growth mechanism of 6H-SiC in step-controlled epitaxy
1993
Effects of gas flow ratio on silicon carbide thin film growth mode and polytype formation during gas-source molecular beam epitaxy
1994 StandoutNobel
Valence band discontinuity, surface reconstruction, and chemistry of (0001), (0001), and (1100) 2H–AlN/6H–SiC interfaces
1999 StandoutNobel
Heteroepitaxial growth of β-SiC on silicon substrate using SiCl4-C3H8-H2 system
1978
Effects of gamma-ray irradiation on cubic silicon carbide metal-oxide-semiconductor structure
1991
Works of C. E. Ryan being referenced
Silicon Carbide—1973
1977
Vapor-liquid-solid and melt growth of silicon carbide
1967
The discovery of a 2H-3C solid state transformation in silicon carbide single crystals
1971
The growth of silicon carbide needles by the vapor-liquid-solid method
1971