Citation Impact
Citing Papers
Alternative Plasmonic Materials: Beyond Gold and Silver
2013 Standout
Recent Developments in the Field of Inorganic Phosphors
2009 Standout
Rigorous electromagnetic analysis of dipole emission in periodically corrugated layers: the grating-assisted resonant-cavity light-emitting diode
2002
Double embedded photonic crystals for extraction of guided light in light-emitting diodes
2012 StandoutNobel
Impact of photonic crystals on LED light extraction efficiency: approaches and limits to vertical structure designs
2010
Photonic crystal laser lift-off GaN light-emitting diodes
2006 StandoutNobel
Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching
2014 StandoutNobel
CW lasing of current injection blue GaN-based vertical cavity surface emitting laser
2008
Efficiency enhancement of solar cells by luminescent up-conversion of sunlight
2006
Room-temperature GaN vertical-cavity surface-emitting laser operation in an extended cavity scheme
2003
Photonic Crystal-Assisted Light Extraction from a Colloidal Quantum Dot/GaN Hybrid Structure
2006 StandoutNobel
Characteristics of Current-Injected GaN-Based Vertical-Cavity Surface-Emitting Lasers
2011
Toward ultrahigh-efficiency aluminum oxide microcavity light-emitting diodes: guided mode extraction by photonic crystals
2002
Fabrication and performance of efficient blue light emitting III-nitride photonic crystals
2004
Indium nitride (InN): A review on growth, characterization, and properties
2003
Development of GaN-Based Vertical-Cavity Surface-Emitting Lasers
2009
Microfluidics: Fluid physics at the nanoliter scale
2005 Standout
High-Power III-Nitride Emitters for Solid-State Lighting
2002
Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution
2006 StandoutNobel
Spintronics: Fundamentals and applications
2004 Standout
Printed Assemblies of Inorganic Light-Emitting Diodes for Deformable and Semitransparent Displays
2009 Science
Improvement of far-field pattern in nitride laser diodes
1999 StandoutNobel
Luminescence related to high density of Mg-induced stacking faults in homoepitaxially grown GaN
2011 StandoutNobel
Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
2007 Standout
High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm
2011 StandoutNobel
Effect of n-type modulation doping on the photoluminescence of GaN/Al0.07Ga0.93N multiple quantum wells
2002 StandoutNobel
Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes
2008 StandoutNobel
Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (202¯1¯) GaN substrates
2013 StandoutNobel
Visible resonant modes in GaN-based photonic crystal membrane cavities
2006 StandoutNobel
Monodisperse Double Emulsions Generated from a Microcapillary Device
2005 StandoutScience
Improvement in light extraction efficiency in group III nitride-based light-emitting diodes using moth-eye structure
2006 StandoutNobel
Ce3+-Doped garnet phosphors: composition modification, luminescence properties and applications
2016 Standout
High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates
2013 StandoutNobel
GaN light-emitting diodes with Archimedean lattice photonic crystals
2006 StandoutNobel
Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces
2002 StandoutNobel
Vertical injection thin-film AlGaN∕AlGaN multiple-quantum-well deep ultraviolet light-emitting diodes
2006
Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching
2005 StandoutNobel
Chemical, electrical, and structural properties of Ni/Au contacts on chemical vapor cleaned p-type GaN
2002 StandoutNobel
Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction
2001
GaN blue photonic crystal membrane nanocavities
2005 StandoutNobel
Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals
2011 StandoutNobel
Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films
2009 StandoutNobel
Room-temperature continuous-wave lasing in GaN/InGaN microdisks
2006 StandoutNobel
Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction
2005 StandoutNobel
Speed Limit for Triplet-Exciton Transfer in Solid-State PbS Nanocrystal-Sensitized Photon Upconversion
2017 StandoutNobel
High-Al-content crack-free AlGaN/GaN Bragg mirrors grown by molecular-beam epitaxy
2003
Solid-state lighting
2004
Organic Semiconducting Oligomers for Use in Thin Film Transistors
2007 Standout
Group III-nitride based hetero and quantum structures
2000
Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates
2010 StandoutNobel
Hexagonal pyramid shaped light-emitting diodes based on ZnO and GaN direct wafer bonding
2006 StandoutNobel
High reflectivity and broad bandwidth AlN/GaN distributed Bragg reflectors grown by molecular-beam epitaxy
2000
Demonstration of Blue and Green GaN-Based Vertical-Cavity Surface-Emitting Lasers by Current Injection at Room Temperature
2011
Prospects for LED lighting
2009 StandoutNobel
High-power low-droop violet semipolar (303¯1¯) InGaN/GaN light-emitting diodes with thick active layer design
2014 StandoutNobel
Gallium-nitride-based microcavity light-emitting diodes with air-gap distributed Bragg reflectors
2007 StandoutNobel
Morphological evolution of InGaN/GaN light-emitting diodes grown on free-standing m-plane GaN substrates
2013 StandoutNobel
Electroluminescence from a Mixed Red−Green−Blue Colloidal Quantum Dot Monolayer
2007 StandoutNobel
LEDs for Solid-State Lighting: Performance Challenges and Recent Advances
2009
Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels
2004 StandoutNobel
Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy
2011 StandoutNobel
Advanced light emitting diodes structures for optoelectronic applications
2003
Growth of bulk GaN in a vertical hydride vapour phase epitaxy reactor
2006
Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates
2007 StandoutNobel
Room-Temperature Operation of Optically Pumped Blue-Violet GaN-Based Vertical-Cavity Surface-Emitting Lasers Fabricated by Laser Lift-Off
2006
Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
2004 StandoutNobel
III–V Nitrides: A New Age for Optoelectronics
2003
The Promise and Challenge of Solid-State Lighting
2001
High-power AlGaInN flip-chip light-emitting diodes
2001
Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature
2010
High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration
2014 StandoutNobel
Room-Temperature CW Lasing of a GaN-Based Vertical-Cavity Surface-Emitting Laser by Current Injection
2008
Performance of high‐power III‐nitride light emitting diodes
2008
Materials and Mechanics for Stretchable Electronics
2010 StandoutScience
Photoelectrochemical etching of p-type GaN heterostructures
2009 StandoutNobel
Evaluation of vacuum bonded GaAs/Si spin-valve transistors
2000
Synthesis and Growth of Gallium Nitride by the Chemical Vapor Reaction Process (CVRP)
1999
The status and future development of innovative optoelectronic devices based on III-nitrides on SiC and on III-antimonides
2001
Solid-State Light Sources Getting Smart
2005 StandoutScience
Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells
2012 StandoutNobel
Vertical Stand Transparent Light-Emitting Diode Architecture for High-Efficiency and High-Power Light-Emitting Diodes
2010 StandoutNobel
Substrates for gallium nitride epitaxy
2002
25th Anniversary Article: The Evolution of Electronic Skin (E‐Skin): A Brief History, Design Considerations, and Recent Progress
2013 Standout
Works of C. Carter-Coman being referenced
Growth of GaN on lithium gallate substrates for development of a GaN thin compliant substrate
1998
A vertical injection blue light emitting diode in substrate separated InGaN heterostructures
1999
Analysis of GaAs Substrate Removal Etching with Citric Acid : H 2 O 2 and NH 4 OH : H 2 O 2 for Application to Compliant Substrates
1997
Growth of GaN on Lithium Gallate Substrates for Development of a GaN Thin Compliant Substrate
1997
Analysis of In0.07Ga0.93As layers on GaAs compliant substrates by double crystal x-ray diffraction
1997
A vertical cavity light emitting InGaN quantum well heterostructure
1999
Selective Wet Etching of Lithium Gallate
1998
High-flux, high-efficiency transparent-substrateAlGaInP/GaP light-emitting diodes
1998
A quasicontinuous wave, optically pumped violet vertical cavity surface emitting laser
2000
High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency
1999