Citation Impact

Citing Papers

Alternative Plasmonic Materials: Beyond Gold and Silver
2013 Standout
Plasmon-induced hot carrier science and technology
2015 Standout
Evidence for a Quantum Size Effect of the Conduction Electrons during Oxidation of Cs
1986 StandoutNobel
Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors
2000 StandoutScience
Disordered electronic systems
1985 Standout
Electron concentrations and mobilities in AlSb/InAs/AlSb quantum wells
1989 StandoutNobel
Minority carrier diffusion length and recombination lifetime in GaAs:Ge prepared by liquid-phase epitaxy
1973
X-ray photoelectron diffraction from (3×3) and (√3×√3)R 30° (0001)Si 6H–SiC surfaces
1998 StandoutNobel
The interaction of cesium with oxygen
1987 StandoutNobel
7 × 7 Reconstruction on Si(111) Resolved in Real Space
1983 StandoutNobel
Average energy to form electron-hole pairs in GaP diodes with alpha particles
1972
Vapor Growth of GaP on GaAs Substrates
1965
Luminescence properties of defects in GaN
2005 Standout
Photovoltage profiling of hydrogenated amorphous Si solar cells
1984
Determination of the energy diagram of the dithioketopyrrolopyrrole/SnO2:F heterojunction by surface photovoltage spectroscopy
1997
Adsorbed layer and thin film growth modes monitored by Auger electron spectroscopy
1989
Spintronics: Fundamentals and applications
2004 Standout
Primary and secondary orbital effects in dyotropic rearrangements
1973
Ultrafast optical manipulation of magnetic order
2010 Standout
Electrical Properties of Sulfur-Doped Gallium Phosphide
1968 StandoutNobel
A comprehensive review of ZnO materials and devices
2005 Standout
Demonstration of a 4H SiC betavoltaic cell
2006 Standout
Picosecond reflection high-energy electron diffraction
1988 StandoutNobel
Electronic states at the silicon-silicon dioxide interface
1977
Revisiting the 7 × 7 reconstruction of Si(111)
1985 StandoutNobel
Time-Resolved Laser-Induced Phase Transformation in Aluminum
1984 StandoutNobel
Pulsed laser annealing of GaAs and Si: Combined reflectivity and time-of-flight measurements
1983
Photoemission from activated gallium arsenide. I. Very-high-resolution energy distribution curves
1985
Surface photovoltage phenomena: theory, experiment, and applications
1999 Standout
Surface reconstruction on semiconductors
1976
Gold-Catalyzed Cycloisomerizations of Enynes: A Mechanistic Perspective
2008 Standout
Two-dimensional electrical transport in GaAs-AlxGa1xAsmultilayers at high magnetic fields
1980 StandoutNobel
Atomic Layer Deposition: An Overview
2009 Standout
Theory of ferromagnetic (III,Mn)V semiconductors
2006
Evidence for Self-Activated Luminescence in GaAs: The Gallium Vacancy-Donor Center
1968
Scanning tunneling microscopy
1983 StandoutNobel
Growth structure of chemisorbed oxygen on GaAs(110) and InP(110) surfaces
1988 StandoutNobel
Band Bending in Semiconductors: Chemical and Physical Consequences at Surfaces and Interfaces
2012 Standout
Heterostructure devices: A device physicist looks at interfaces
1983 StandoutNobel
Surface Photovoltage Spectroscopy of Dye-Sensitized Solar Cells with TiO2, Nb2O5, and SrTiO3Nanocrystalline Photoanodes:  Indication for Electron Injection from Higher Excited Dye States
2001
Surface photovoltage spectroscopy of an InGaAs/GaAs/AlGaAs single quantum well laser structure
1998
Spatially resolved space-charge density in the hydrogenated amorphous silicon Schottky barrier from surface photovoltage measurements
1990
Electron scattering mechanisms in n-type epitaxial GaP
1966
Semiconducting and other major properties of gallium arsenide
1982 Standout
Secondary-Electron Emission
1968
Secondary electron emission in the scanning electron microscope
1983 Standout
Theory of thePbcenter at the <111> Si/SiO2interface
1987
Core-level photoemission of the Cs-O adlayer of NEA GaAs cathodes
1978
Two-Dimensional Resistivity of Ultrathin Metal Films
1981
Microscopic structure of theSiO2/Si interface
1988 Standout
Enhanced photovoltaic performance with co-sensitization of quantum dots and an organic dye in dye-sensitized solar cells
2014 StandoutNobel
Quantized Anomalous Hall Effect in Magnetic Topological Insulators
2010 StandoutScience
On the (110) orientation as the preferred orientation for the molecular beam epitaxial growth of GaAs on Ge, GaP on Si, and similar zincblende-on-diamond systems
1980 StandoutNobel
Adsorption of potassium and oxygen on GaAs(110): Charge transfer and enhanced oxidation
1989
Scanning tunneling microscopy
1985 StandoutNobel
Activation of C−H Bonds by Metal Complexes
1997 Standout
Dyotropic Rearrangements, a New Class of Orbital‐Symmetry Controlled Reactions. Type I
1972
Electron-Hole-Pair Creation Energies in Semiconductors
1975 Standout
SiO2 ultra thin film growth kinetics as investigated by surface techniques
1982
Anomalous Hall effect
2010 Standout
Soft-x-ray photoemission study of chemisorption and Fermi-level pinning at the Cs/GaAs(110) and K/GaAs(110) interfaces
1988
Molecular beam epitaxial growth of GaP on Si
1984 StandoutNobel
On the practical applications of MBE surface phase diagrams
1987
Photoemission of spin-polarized electrons from GaAs
1976
g-Factor enhancement in the 2D electron gas in GaAs/AlGaAs heterojunctions
1982 StandoutNobel
Bandgap Dependence and Related Features of Radiation Ionization Energies in Semiconductors
1968
Visible-light driven heterojunction photocatalysts for water splitting – a critical review
2015 Standout
C60andC70fullerenes and potassium fullerides
1992 StandoutNobel
Quantitative surface photovoltage spectroscopy of semiconductor interfaces
1995
Optical and electrical properties of Mn-doped GaAs grown by molecular-beam epitaxy
1975
Electron spin resonance in n-type GaAs
1963
Gallium nitride materials - progress, status, and potential roadblocks
2002 StandoutNobel
Nucleus-Independent Chemical Shifts (NICS) as an Aromaticity Criterion
2005 Standout
Photoionization of Individual CdSe/CdS Core/Shell Nanocrystals on Silicon with 2-nm Oxide Depends on Surface Band Bending
2003 StandoutNobel
Characterization of high purity GaAs grown by molecular beam epitaxy
1982 StandoutNobel
Dynamics of laser sputtering at GaN, GaP, and GaAs surfaces
1991 StandoutNobel
Adsorption and co-adsorption of boron and oxygen on ordered α-SiC surfaces
1995
Resistance standard using quantization of the Hall resistance of GaAs-AlxGa1−xAs heterostructures
1981 StandoutNobel
Self-compensation of donors in high-purity GaAs
1975
Formation of anion vacancies by Langmuir evaporation from InP and GaAs (110) surfaces at low temperatures
1995
Surface photovoltage spectroscopy and thermally stimulated contact potential difference studies of real ZnS surfaces
1983
Electron Spin Resonance onGaAsAlxGa1xAsHeterostructures
1983 StandoutNobel
Determination of the first satellite valley energy in the conduction band of wurtzite GaN by near-band-gap photoemission spectroscopy
2014 StandoutNobel
Computer simulation of actual and Kelvin-probe-measured potential profiles: Application to amorphous films
1990
Structure and reactivity of GaAs surfaces
1981
Aerobic photocatalysed oxidation of alkanes in the presence of decatungstates: products and effects of solvent and counter-ion of the catalyst
1996
Theory of the electronic structure of the Si-SiO2interface
1980 StandoutNobel
Surface photovoltage spectroscopy of semiconductor structures: at the crossroads of physics, chemistry and electrical engineering
2001
Electronic structure of the GaAs:MnGascenter
1997
Photoluminescence in Mn-implanted GaAs—An explanation on the ∼1.40-eV emission
1979
Electronic properties of two-dimensional systems
1982 Standout
Negative affinity 3–5 photocathodes: Their physics and technology
1977

Works of Bernard Goldstein being referenced

Electrical characterization of solar cells by surface photovoltage
1981
Langmuir evaporation from the (100), (111A), and (111B) faces of GaAs
1976
LEED-Auger characterization of GaAs during activation to negative electron affinity by the adsorption of Cs and O
1975
Concerning the Mechanism of the Reduction of Hydroperoxides by Trisubstituted Phosphines and Trisubstituted Phosphites1
1960
Surface photovoltage, band-bending and surface states on a-Si : H
1980
Characterization of clean and oxidized (100)LaB6
1978
Different bonding states of Cs and O on highly photoemissive GaAs by flash−desorption experiments
1975
An Oxygen-18 Tracer Study of the Rearrangements of 2-Phenyl-1-propyl p-Bromobenzenesulfonate and 2-p-Methoxyphenyl-1-propyl p-Toluenesulfonate1
1957
OBSERVATION OF PARAMAGNETIC RESONANCE CENTERS IN GaAs IN UNUSUALLY HIGH CONCENTRATIONS
1963
Optical and Electrical Properties of Single-Crystal GaP Vapor-Grown on GaAs Substrate
1964
Growth of thin platinum films on hydrogenated amorphous silicon and its oxide
1980
LEED, Auger and plasmon studies of negative electron affinity on Si produced by the adsorption of Cs and O
1973
Electron paramagnetic resonance investigation of the Si-SiO2 interface
1969
Direct Measurement of Diffusion Length in GaAs by α Particles
1971
Work function and Auger measurements of the initial oxidation of hydrogenated amorphous Si and of single-crystal Si
1978
Electron-Hole Pair Creation in Gallium Phosphide by α Particles
1965
Electron Paramagnetic Resonance of Manganese in Gallium Arsenide
1962
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