Benjamin Leung

Solar-to-hydrogen efficiency of more than 9% in photocatalytic water splitting

Ultra-CEP-stable single-cycle pulses at 2.2  µm

Growth of β-Ga₂O₃and GaN nanowires on GaN for photoelectrochemical hydrogen generation

Synthesis, assembly and applications of semiconductor nanomembranes

Enhanced electroluminescence of a-plane InGaN light emitting diodes grown on oxide-patterned r-plane sapphire substrates

Deep traps and enhanced photoluminescence efficiency in nonpolar a-GaN/InGaN quantum well structures

A review of Ga2O3 materials, processing, and devices

Latest advances in supercapacitors: from new electrode materials to novel device designs

Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells

Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga₂O₃, and diamond

Graphene-Like Two-Dimensional Materials

Semipolar GaN films on patterned r-plane sapphire obtained by wet chemical etching

Study of GaN nanowires converted fromβ-Ga₂O₃and photoconduction in a single nanowire

Nonpolar a-GaN epilayers with reduced defect density using patterned r-plane sapphire substrates

Utilisation of GaN and InGaN/GaN with nanoporous structures for water splitting

Growth of low-defect-density nonpolar a-plane GaN on r-plane sapphire using pulse NH_3 interrupted etching

Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region

Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯2) semipolar versus (0001) polar planes

Nanostructured Materials for Room‐Temperature Gas Sensors

Characteristics of a-plane GaN films grown on optimized silicon-dioxide-patterned r-plane sapphire substrates

Highly stable blue-emission in semipolar (11-22) InGaN/GaN multi-quantum well light-emitting diode

Integrated Gallium Nitride Nonlinear Photonics

Gallium Nitride Crystals: Novel Supercapacitor Electrode Materials

25th Anniversary Article: The Evolution of Electronic Skin (E‐Skin): A Brief History, Design Considerations, and Recent Progress

The fabrication of large-area, free-standing GaN by a novel nanoetching process

Wide Bandgap III-Nitride Nanomembranes for Optoelectronic Applications

Morphological and microstructural evolution in the two-step growth of nonpolar a-plane GaN on r-plane sapphire

Single Crystal Gallium Nitride Nanomembrane Photoconductor and Field Effect Transistor

Improved photoelectrochemical water splitting efficiency of nanoporous GaN photoanode

Nonpolar InGaN/GaN Core–Shell Single Nanowire Lasers

Improving microstructural quality of semipolar (1122) GaN on m-plane sapphire by a two-step growth process

Shape transformation of nanoporous GaN by annealing: From buried cavities to nanomembranes

Broadband nanophotonic waveguides and resonators based on epitaxial GaN thin films