Citation Impact
Citing Papers
Evaluation of advanced oxidation processes for water and wastewater treatment – A critical review
2018 Standout
Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
2011 Standout
Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy
2010 StandoutNobel
Growth and characterization of the AlInGaN quaternary protective layer to suppress the thermal damage of InGaN multiple quantum wells
2008
A review of Ga2O3 materials, processing, and devices
2018 Standout
Control of growth mode in Mg-doped GaN/AlN heterostructure
2014 StandoutNobel
LED revolution: fundamentals and prospects for UV disinfection applications
2017
Epitaxial growth of GaN by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) in the downflow of a very high frequency (VHF) N2/H2 excited plasma – effect of TMG flow rate and VHF power
2014 StandoutNobel
Improvement in output power of a 460 nm InGaN light-emitting diode using staggered quantum well
2010
High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm
2011 StandoutNobel
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
2019 StandoutNobel
Electroreflectance study on the polarization field in InGaN/AlInGaN multiple quantum wells
2004
Electrical properties of Si doped Ga2O3 films grown by pulsed laser deposition
2015
Electrical and optical properties of Si-doped Ga2O3
2017
Dynamics of polarized photoluminescence in m-plane InGaN/GaN quantum wells
2010 StandoutNobel
Anomalous compositional pulling effect in InGaN/GaN multiple quantum wells
2003
Optical properties of extended and localized states in m-plane InGaN quantum wells
2013 StandoutNobel
The red σ2/kT spectral shift in partially disordered semiconductors
2003
Effects of strain-compensated AlGaN/InGaN superlattice barriers on the optical properties of InGaN light-emitting diodes
2010
Growth of AlGaN/GaN/AlGaN double heterojunction field-effect transistors and the observation of a compositional pulling effect
2009 StandoutNobel
Determination of polarization field in a semipolar (112¯2) InGa∕GaN single quantum well using Franz–Keldysh oscillations in electroreflectance
2009 StandoutNobel
Optical polarization characteristics of light emission from sidewalls of primary-color light-emitting diodes
2008 StandoutNobel
Optical polarization characteristics ofm-oriented InGaN/GaN light-emitting diodes with various indium compositions in single-quantum-well structure
2008 StandoutNobel
Thermodynamic study of β-Ga2O3 growth by halide vapor phase epitaxy
2014
Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells
2013 StandoutNobel
Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells
2012 StandoutNobel
Unambiguous evidence of the existence of polarization field crossover in a semipolar InGaN/GaN single quantum well
2009 StandoutNobel
Homoepitaxial growth of β-Ga2O3layers by halide vapor phase epitaxy
2014
Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy
2013 StandoutNobel
Effects of exciton localization on internal quantum efficiency of InGaN nanowires
2013 StandoutNobel
Built-in field control in alloyedc-plane III-N quantum dots and wells
2011
Wide-bandgap semiconductor materials: For their full bloom
2015
Development of underfilling and encapsulation for deep-ultraviolet LEDs
2014 StandoutNobel
When group-III nitrides go infrared: New properties and perspectives
2009
Polarization of edge emission from III-nitride light emitting diodes of emission wavelength from 395to455nm
2007
X-ray diffraction of III-nitrides
2009
m -plane pure blue laser diodes with p-GaN/n-AlGaN-based asymmetric cladding and InGaN-based wave-guiding layers
2009 StandoutNobel
Semipolar (2021) Single-Quantum-Well Red Light-Emitting Diodes with a Low Forward Voltage
2013 StandoutNobel
Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes
2014 Standout
Works of Baxter Moody being referenced
Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures
2007
Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport
2012
226 nm AlGaN/AlN UV LEDs using p-type Si for hole injection and UV reflection
2018
Characterization of dislocation arrays in AlN single crystals grown by PVT
2011
Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures
2002
The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN
2014
Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy
2013
Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy
2012
Strain-induced piezoelectric field effects on light emission energy and intensity from AlInGaN/InGaN quantum wells
2001