Citation Impact
Citing Papers
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Development of selective lateral photoelectrochemical etching of InGaN/GaN for lift-off applications
2001
Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching
2014 StandoutNobel
Thin films and devices of diamond, silicon carbide and gallium nitride
1993 StandoutNobel
Evidence for a New Phase of SolidHe 3
1972 StandoutNobel
Class-F power amplifiers with maximally flat waveforms
1997
X-ray photoelectron diffraction from (3×3) and (√3×√3)R 30° (0001)Si 6H–SiC surfaces
1998 StandoutNobel
Electrical and optical activation studies of Si-implanted GaN
2005
Structural and Electroluminescence Characteristics of Nonpolar Light-Emitting Diodes Fabricated on Lateral Epitaxially Overgrown a-Plane GaN
2006 StandoutNobel
A review of Ga2O3 materials, processing, and devices
2018 Standout
Novel activation process for Mg-implanted GaN
2013 StandoutNobel
Luminescence properties of defects in GaN
2005 Standout
Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
1994 Standout
Removal of thick (>100nm) InGaN layers for optical devices using band-gap-selective photoelectrochemical etching
2004 StandoutNobel
A Review of LED Drivers and Related Technologies
2017 Standout
Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide
1991 StandoutNobel
Damage buildup in GaN under ion bombardment
2000
New behavior for the density dependence of vacancy formation and mobility in bccHe 3
1984 StandoutNobel
Novel organic-on-InP field-effect transistor
1985
Optical characterization of III-nitrides
2002 StandoutNobel
Dry etch damage in n-type GaN and its recovery by treatment with an N2 plasma
2000
Depth and thermal stability of dry etch damage in GaN Schottky diodes
1999
Novel Magnetic Properties of Solid Helium-3
1987 StandoutNobel
Measurements of the nuclear spin-lattice relaxation times in BCC3He for high magnetic fields, high molar volumes, and low temperatures
1985 StandoutNobel
A Review of Dry Etching of GaN and Related Materials
2000
Excitations in Quantum Crystals (A Survey of NMR Experiments in Solid Helium)
1971 StandoutNobel
Observation of Nuclear Magnetic Order in SolidHe 3
1974 StandoutNobel
Photoelectrochemical undercut etching for fabrication of GaN microelectromechanical systems
2001
Highly anisotropic, ultra-smooth patterning of GaN/SiC by low energy electron enhanced etching in DC plasma
1997 StandoutNobel
Spin ordering in solid 3He: A current perspective
1982 StandoutNobel
Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study
2000 StandoutNobel
Nuclear magnetic order in solid 3He
1992 StandoutNobel
Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates
2005 StandoutNobel
Free-standing, optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical etching
2004 StandoutNobel
Photoluminescence study of Si-doped GaN∕Al0.07Ga0.93N multiple quantum wells with different dopant position
2004 StandoutNobel
Etching of Ga-face and N-face GaN by Inductively Coupled Plasma
2006 StandoutNobel
Nuclear relaxation in bcc3He for large molar volumes
1982 StandoutNobel
Chemical, electrical, and structural properties of Ni/Au contacts on chemical vapor cleaned p-type GaN
2002 StandoutNobel
AlGaN/GaN HEMTs-an overview of device operation and applications
2002 Standout
Effects of low energy e‐beam irradiation on cathodoluminescence from GaN
2012 StandoutNobel
RF power amplifiers for wireless communications
2000 Standout
Metal Schottky barrier contacts to alpha 6H-SiC
1992 StandoutNobel
The dry etching of group III-nitride wide-bandgap semiconductors
1996
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Constant-volume pressure measurements on BCC solid3He
1986 StandoutNobel
Ultrathin Organic Films Grown by Organic Molecular Beam Deposition and Related Techniques
1997 Standout
Observation of inductively coupled-plasma-induced damage on n-type GaN using deep-level transient spectroscopy
2003
Individual Roles of Atoms and Ions during Hydrogen Plasma Passivation of Surface Defects on GaN Created by Plasma Etching
2012 StandoutNobel
Properties of melting 3He: Specific heat, entropy, latent heat, and temperature
1978 StandoutNobel
GaN n- and p-type Schottky diodes: Effect of dry etch damage
2000
Backside-illuminated photoelectrochemical etching for the fabrication of deeply undercut GaN structures
2000
GaN: Processing, defects, and devices
1999
The melting pressure and entropy of spin ordered solid 3He
1980 StandoutNobel
Nonpolar m-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation
2006 StandoutNobel
Push-Pull Class-${\rm E}_{\rm M}$ Power Amplifier for Low Harmonic-Contents and High Output-Power Applications
2012
Nuclear Antiferromagnetic Resonance in SolidHe 3
1980 StandoutNobel
Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates
2005 StandoutNobel
Electrical effects of plasma damage in p-GaN
1999
Highly selective photoelectrochemical etching of nitride materials for defect investigation and device fabrication
2001
Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
2004 StandoutNobel
Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain
2000 StandoutNobel
The spectral density function J1(ω) in solid 3He
1972 StandoutNobel
Deposition and characterization of diamond, silicon carbide and gallium nitride thin films
1994 StandoutNobel
Photoluminescence of AlxGa1−xAs alloys
1994
GaN Overgrowth on Thermally Etched Nanoporous GaN Template
2013 StandoutNobel
Yellow luminescence depth profiling on GaN epifilms using reactive ion etching
1998
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
2000 StandoutNobel
Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
2004 StandoutNobel
Works of Bálint Molnár being referenced
Class-E/sub m/ switching-mode tuned power amplifier-high efficiency with slow-switching transistor
2003
Measurement of the g-factor of the 412 keV state in Hg198
1964
Ion implantation doping of OMCVD grown GaN
1997
Close-contact annealing of ion-implanted GaAs and InP
1980
Optically detected magnetic resonance of group-IV and group-VI impurities in AlAs andAl x Ga 1 − x
1991
Basic limitations on waveforms achievable in single-ended switching-mode tuned (Class E) power amplifiers
1984
Plasma etch-induced conduction changes in gallium nitride
1999
The Effect of Hydrogen-Based, High Density Plasma Etching on the Electronic Properties of Gallium Nitride
1995
The influence of CH4/H2/Ar plasma etching on the conductivity of n-type gallium nitride
1995
Some Observations on the Electrical Characterization of the Heteroepitaxially Grown Cubic SiC
1989
Si Implantation and Annealing OF GaN FOR n-Type Layer Formation
1996