Citation Impact
Citing Papers
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Remote hydrogen plasma doping of single crystal ZnO
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Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours
1997 StandoutNobel
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
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Spectroscopic evidence for hydrogen-phosphorus pairing in zinc-doped InP containing hydrogen
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Hydrogen Complexes in III-V Semiconductors
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GaN-Based p–n Junction Blue-Light-Emitting Devices
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Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
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Staggered to straddling band lineups in InAs/Al(As, Sb)
1999 StandoutNobel
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2009
Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy
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1997 StandoutNobel
Realization of high hole concentrations in Mg doped semipolar (101¯1¯) GaN
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Hydrogen passivation of high purity n -type InP
1990
Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes
1994 StandoutNobel
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2002 StandoutNobel
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Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study
2000 StandoutNobel
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Low-temperature photoluminescence of epitaxial InAs
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Self‐Supported Transition‐Metal‐Based Electrocatalysts for Hydrogen and Oxygen Evolution
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Spatially Heterogeneous Electrical and Electrochemical Properties of Hydrogen-Terminated Boron-Doped Nanocrystalline Diamond Thin Film Deposited from an Argon-Rich CH4/H2/Ar/B2H6 Source Gas Mixture
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p-type conduction in Mg-doped GaN and Al0.08Ga0.92N grown by metalorganic vapor phase epitaxy
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Strain-induced polarization in wurtzite III-nitride semipolar layers
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1995
Surface Protection during Plasma Hydrogenation for Acceptor Passivation in InP
1989
Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes
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Polarized Raman spectra in GaN
1995 StandoutNobel
InGaN‐based blue/green LEDs and laser diodes
1996 StandoutNobel
Hydrogen interactions with defects in crystalline solids
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2017
Band parameters for nitrogen-containing semiconductors
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Defect-Related Donors, Acceptors, and Traps in GaN
2001
First-principles calculations for defects and impurities: Applications to III-nitrides
2004 Standout
Works of B. Theys being referenced
Effects of proton implantation on electrical and recombination properties of n-GaN
2000
Experimental study of the hydrogen complexes in indium phosphide
1993
Evidence of hydrogen–boron interactions in diamond from deuterium diffusion and infrared spectroscopy experiments
1999
New insights into the Mo/Cu(In,Ga)Se2 interface in thin film solar cells: Formation and properties of the MoSe2 interfacial layer
2016
Tuning the ferromagnetic properties of hydrogenated GaMnAs
2005
Diffusion and thermal stability of hydrogen in homoepitaxial CVD diamond films
2000
GaNAsSb: how does it compare with other dilute III V-nitride alloys?
2002
Hydrogen-boron interactions inp -type diamond
1998
Plasma-hydrogenated low-threshold wide-band 1.3 μm buried ridge structure laser
1989
Hydrogen-acceptor interactions in diamond
2001
Fermi level dependence of hydrogen diffusivity in GaN
2001
Hydrogen Diffusion and Shallow Acceptor Passivation in p-Type InP
1989
Hydrogenation of InAs on GaAs heterostructures
1991
Hydrogen passivation of shallow acceptors in p-type InP
1989
Misfit dislocations at the GaN/SiC interface and their interaction with point defects
2000
Effects of intentionally introduced hydrogen on the electrical properties of ZnO layers grown by metalorganic chemical vapor deposition
2002