Citation Impact

Citing Papers

Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions
2018 StandoutNature
Recent developments in compact ultrafast lasers
2003 StandoutNature
Structural absorption by barbule microstructures of super black bird of paradise feathers
2017 Standout
Role of Hot-Electron Preheating in the Compression of Direct-Drive Imploding Targets with CryogenicD2Ablators
2008
Plasma Ion Evolution in the Wake of a High-Intensity Ultrashort Laser Pulse
2005
Gigabar Spherical Shock Generation on the OMEGA Laser
2015 StandoutNobel
Raman spectroscopic monitoring of droplet polymerization in a microfluidic device
2006
Reversible changes in doping of InGaAlN alloys induced by ion implantation or hydrogenation
1993
The structure and properties of metal-semiconductor interfaces
1982
Minority carrier diffusion length and recombination lifetime in GaAs:Ge prepared by liquid-phase epitaxy
1973
Mobility of holes of zinc-blende III–V and II–VI compounds
1974
Quantum Confinement in Size-Selected, Surface-Oxidized Silicon Nanocrystals
1993 StandoutScienceNobel
Selective Etching of Silicon from Ti3SiC2 (MAX) To Obtain 2D Titanium Carbide (MXene)
2018
Picosecond GaAs-based photoconductive optoelectronic detectors
1989 StandoutNobel
The anodic oxidation of superimposed metallic layers: theory
1980
Solar Water Splitting Cells
2010 Standout
High-voltage picosecond photoconductor switch based on low-temperature-grown GaAs
1990 StandoutNobel
Enhanced Carrier Lifetimes and Suppression of Midgap States in GaAs at a Magnetic Metal Interface
1997
Optoelectronic transient characterization of ultrafast devices
1992 StandoutNobel
Investigation of optically active E1 transversal optic phonon modes in AlxGa1−xN layers deposited on 6H–SiC substrates using infrared reflectance
1998 StandoutNobel
Spintronics: Fundamentals and applications
2004 Standout
The incorporation and characterisation of acceptors in epitaxial GaAs
1975
Deep donor levels (D X centers) in III-V semiconductors
1990
A comprehensive review of ZnO materials and devices
2005 Standout
Atomic Force Microscope
1986 StandoutNobel
Cleaning of AlN and GaN surfaces
1998 StandoutNobel
The growth and properties of LPE GaAs
1972
Dimensions of luminescent oxidized and porous silicon structures
1994 StandoutNobel
Analysis of band bending at III–V semiconductor interfaces by Raman spectroscopy
1993
Resistivity and mobility of GaP at 300 K
1983
Thermodynamic Calculations for the Chemical Vapor Deposition of Silicon Nitride
1983 StandoutNobel
Ionization Loss of Channeled 1.35-GeV/cProtons and Pions
1976 StandoutNobel
Growth structure of chemisorbed oxygen on GaAs(110) and InP(110) surfaces
1988 StandoutNobel
Band Bending in Semiconductors: Chemical and Physical Consequences at Surfaces and Interfaces
2012 Standout
Black silicon: fabrication methods, properties and solar energy applications
2014
Channeling and related effects in the motion of charged particles through crystals
1974
LPE of buried heterostructure laser devices
1986
Noble-metalCdTe interface formation
1988 StandoutNobel
Selective chemical etching of polycrystalline SiGe alloys with respect to Si and SiO2
1992
Semiconducting and other major properties of gallium arsenide
1982 Standout
Properties of the yellow luminescence in undoped GaN epitaxial layers
1995 StandoutNobel
Raman investigation of anharmonicity and disorder-induced effects inGa1xAlxAsepitaxial layers
1981
Raman analysis of the configurational disorder in AlxGa1−xN films
1997 StandoutNobel
Evidence for localized Si-donor state and its metastable properties in AlGaN
1999 StandoutNobel
Two-dimensional electron gas on etched GaAs sidewalls by liquid phase epitaxial regrowth
1989 StandoutNobel
JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE
1970
Temperature dependence of the mobility of two-dimensional hole systems in modulation-doped GaAs-(AlGa)As
1984 StandoutNobel
Interband transitions of thin-layer GaAs/AlAs superlattices
1987
One‐Dimensional Nanostructures: Synthesis, Characterization, and Applications
2003 Standout
Status of the GaAs metal—oxide—semiconductor technology
1980
Optical anisotropy in InAs/AlSb superlattices
1994 StandoutNobel
Size, shape, and composition of luminescent species in oxidized Si nanocrystals and H-passivated porous Si
1995 StandoutNobel
Quantum Cascade Laser
1994 StandoutScience
A General Synthetic Route to III–V Compound Semiconductor Nanowires
2001
On the electrical properties of compound semiconductor interfaces in metal/insulator/ semiconductor structures and the possible origin of interface states
1983
Molecular beam epitaxial growth of GaP on Si
1984 StandoutNobel
Measurement of gain and absorption spectra in AlGaAs buried heterostructure lasers
1980
Micromachining a Miniaturized Capillary Electrophoresis-Based Chemical Analysis System on a Chip
1993 StandoutScience
The world of two-dimensional carbides and nitrides (MXenes)
2021 StandoutScience
Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV
1983 Standout
Spectroscopic ellipsometry and low-temperature reflectance: complementary analysis of GaN thin films
1998 StandoutNobel
Silicon as a mechanical material
1982 Standout
Characterization of high purity GaAs grown by molecular beam epitaxy
1982 StandoutNobel
Energy Transfer from Quantum Dots to Graphene and MoS2: The Role of Absorption and Screening in Two-Dimensional Materials
2016 StandoutNobel
Substrate chemical etching prior to molecular-beam epitaxy: An x-ray photoelectron spectroscopy study of GaAs {001} surfaces etched by the H2SO4-H2O2-H2O solution
1985
Emerging Droplet Microfluidics
2017 Standout
Optics in the relativistic regime
2006 StandoutNobel
Electronic properties of junctions between silicon and organic conducting polymers
1990 StandoutNatureNobel
Recombination-enhanced annealing of the E1 and E2 defect levels in 1-MeV-electron–irradiated n-GaAs
1976
A practical guide for the fabrication of microfluidic devices using glass and silicon
2012
Structure and reactivity of GaAs surfaces
1981
Subpicosecond electrooptic sampling: Principles and applications
1986 StandoutNobel
Quality of AlAs-like and InSb-like interfaces in InAs/AlSb superlattices: An optical study
1993 StandoutNobel
Subpicosecond carrier lifetime in GaAs grown by molecular beam epitaxy at low temperatures
1991 StandoutNobel
Electronic structure of the Yb/Ge(111) interface
1986 StandoutNobel
Subpicosecond photoresponse of carriers in low-temperature molecular beam epitaxial In0.52Al0.48As/InP
1990 StandoutNobel
Electronic properties of two-dimensional systems
1982 Standout
Quantum-well width dependence of threshold current density in InGaN lasers
1999 StandoutNobel
Porous Anodic Aluminum Oxide: Anodization and Templated Synthesis of Functional Nanostructures
2014 Standout
Physics issues for shock ignition
2014

Works of B. Schwartz being referenced

Determination of the degree of cure of dental resins using Raman and FT-Raman spectroscopy
1993
Anodic Oxide on GaAs : Quantitative Chemical Depth Profiles Obtained Using Auger Spectroscopy and Neutron Activation Analysis
1977
Germanium-Doped Gallium Arsenide
1970
Picosecond photoresponse in 3He+ bombarded InP photoconductors
1984
Optical Properties of GaAs and Its Electrochemically Grown Anodic Oxide from 1.5 to 6.0 eV
1981
An X‐Ray Photoelectron Spectroscopy Study of Native Oxides on GaAs
1979
High resistivity in InP by helium bombardment
1984
Chemical Etching of Silicon: IV . Etching Technology
1976
Electrolytic etching and electron mobility of GaAs for FET's
1974
ChemInform Abstract: CHEMICAL ETCHING OF SILICON. IV. ETCHING TECHNOLOGY
1977
Chemical Etching of Silicon
1960
Silicon Nitride Thin Films from SiCl[sub 4] Plus NH[sub 3]: Preparation and Properties
1968
A Rutherford scattering study of the chemical composition of native oxides on GaP
1973
The Anodic Oxidation of GaAs in Aqueous H[sub 2]O[sub 2] Solution
1973
Interfacial reactions on anodized GaAs
1979
The Anodization of GaAs and GaP in Aqueous Solutions
1976
Chemical preparation of GaAs surfaces and their characterization by Auger electron and x-ray photoemission spectroscopies
1977
Raman scattering from anodic oxide-GaAs interfaces
1979
Influence of a thin oxide layer between metal and semiconductor on Schottky diode behavior
1976
Optical properties of anodically grown native oxides on some Ga-V compounds from 1.5 to 6.0 eV
1977
Interfacial Arsenic Growth in Anodic Oxide / GaAs Structures
1981
Integrated multijunction GaAs photodetector with high output voltage
1978
Chemical Etching of Germanium in Solutions of HF, HNO[sub 3], H[sub 2]O, and HC[sub 2]H[sub 3]O[sub 2]
1964
DEGRADATION AND PASSIVATION OF GaP LIGHT-EMITTING DIODES
1971
Spectrometry of charged particles from inertial-confinement-fusion plasmas
2003
GaAs Oxidation and the Ga‐As‐O Equilibrium Phase Diagram
1980
Preparation and Stabilization of Anodic Oxides on GaAs
1975
Interfacial Reactions in Plasma‐Grown Native Oxide ‐ GaAs Structures
1980
ChemInform Abstract: THE ANODIC OXIDATION OF GAAS IN AQUEOUS H2O2 SOLUTION
1973
Chemical Etching of Silicon
1961
Channeled substrate buried heterostructure InGaAsP/InP laser employing a buried Fe ion implant for current confinement
1984
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2026