Citation Impact
Citing Papers
High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
1995 StandoutNobel
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Integrated lithium niobate electro-optic modulators operating at CMOS-compatible voltages
2018 StandoutNatureNobel
P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes
1993 StandoutNobel
Group III-nitride lasers: a materials perspective
2011 StandoutNobel
High-brightness InGaN/AlGaN double-heterostructure blue-green-light-emitting diodes
1994 StandoutNobel
First-principles calculations for point defects in solids
2014 Standout
Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours
1997 StandoutNobel
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
1996 StandoutNobel
Luminescence properties of defects in GaN
2005 Standout
Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
1994 Standout
Low extended defect density nonpolar m-plane GaN by sidewall lateral epitaxial overgrowth
2008 StandoutNobel
Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device
1995 StandoutNobel
Progress and prospect of group-III nitride semiconductors
1997 StandoutNobel
Direct Patterning of the Current Confinement Structure for p-Type Column-III Nitrides by Low-Energy Electron Beam Irradiation Treatment
1995 StandoutNobel
Hole Compensation Mechanism of P-Type GaN Films
1992 StandoutNobel
Crystal growth of column III nitrides and their applications to short wavelength light emitters
1995 StandoutNobel
Complex Nature of Acceptor Levels in Aluminum Gallium Nitrides Doped with Magnesium
2001 StandoutNobel
Surface instability and associated roughness during conventional and pendeo-epitaxial growth of GaN(0001) films via MOVPE
2002 StandoutNobel
GaN-Based p–n Junction Blue-Light-Emitting Devices
2013 StandoutNobel
Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
1995 StandoutNobel
III–V nitride based light-emitting devices
1997 StandoutNobel
Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
1997 StandoutNobel
High-power UV InGaN/AlGaN double-heterostructure LEDs
1998 StandoutNobel
Realization of high hole concentrations in Mg doped semipolar (101¯1¯) GaN
2006 StandoutNobel
Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes
1994 StandoutNobel
Si- and Ge-Doped GaN Films Grown with GaN Buffer Layers
1992 StandoutNobel
Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces
2002 StandoutNobel
Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study
2000 StandoutNobel
The use of synchrotron radiation techniques in the characterization of strained semiconductor heterostructures and thin films
2004
Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode
2006 StandoutNobel
InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective area MOCVD
1993
Zn-doped InGaN growth and InGaN/AlGaN double-heterostructure blue-light-emitting diodes
1994 StandoutNobel
Investigations regarding the maskless pendeo-epitaxial growth of GaN films prior to coalescence
2002 StandoutNobel
Hydrogen-enhanced localized plasticity—a mechanism for hydrogen-related fracture
1994 Standout
Structural and optical investigation of InAsxP1−x/InP strained superlattices
1998
InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets
1996 StandoutNobel
GaN/GaInN/GaN Double Heterostructure Light Emitting Diode Fabricated Using Plasma-Assisted Molecular Beam Epitaxy
1995 StandoutNobel
Local atomic structure in strained interfaces ofIn x Ga 1 − x A s / I n P
1998
Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges
2009 StandoutNobel
Misorientation effect on the monolayer terrace topography of (100) InP substrates annealed under a PH3/H2 ambient and homoepitaxial layers grown by metalorganic chemical vapor deposition
1995
High-power InGaN/GaN double-heterostructure violet light emitting diodes
1993 StandoutNobel
The homoepitaxy of GaN by metalorganic vapor phase epitaxy using GaN substrates
1994 StandoutNobel
Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions
2013 StandoutNobel
Present and future aspects of blue light emitting devices
1997 StandoutNobel
History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination
2013 StandoutNobel
First III–V-nitride-based violet laser diodes
1997 StandoutNobel
p-type conduction in Mg-doped GaN and Al0.08Ga0.92N grown by metalorganic vapor phase epitaxy
1994 StandoutNobel
Hydrogen-related defects in crystalline semiconductors: a theorist's perspective
1995
Polarized Raman spectra in GaN
1995 StandoutNobel
Key inventions in the history of nitride-based blue LED and LD
2007 StandoutNobel
InGaN‐based blue/green LEDs and laser diodes
1996 StandoutNobel
Hydrogen interactions with defects in crystalline solids
1992 Standout
First-principles calculations for defects and impurities: Applications to III-nitrides
2004 Standout
Investigations of Polarization-Induced Hole Accumulations and Vertical Hole Conductions in GaN/AlGaN Heterostructures
2013 StandoutNobel
Disclosing the Complex Structure of UiO-66 Metal Organic Framework: A Synergic Combination of Experiment and Theory
2011 Standout
Works of B. Rose being referenced
High-speed, InGaAsP/InP multiple quantum well, 1.55 μm singlemode modulator
1991
Experimental study of the hydrogen complexes in indium phosphide
1993
Spectroscopic evidence for hydrogen-phosphorus pairing in zinc-doped InP containing hydrogen
1989
Instrumental aspects of atmospheric pressure MOVPE growth of InP and InP: GaInAsP heterostructures
1986
Hydrogen Diffusion and Shallow Acceptor Passivation in p-Type InP
1989
Hydrogen passivation of shallow acceptors in p-type InP
1989