Citation Impact
Citing Papers
Group III-nitride lasers: a materials perspective
2011 StandoutNobel
Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes
2010 StandoutNobel
Effect of GaN Buffer Layer Growth Pressure on the Device Characteristics of AlGaN/GaN High-Electron-Mobility Transistors on Si
2009
A review of Ga2O3 materials, processing, and devices
2018 Standout
Review—Ionizing Radiation Damage Effects on GaN Devices
2015
Hybrid functional calculations ofD X
2014
Growth and design of deep-UV (240–290nm) light emitting diodes using AlGaN alloys
2004
Effects of AlGaN/GaN HEMT structure on RF reliability
2005
GaN-Based RF Power Devices and Amplifiers
2008 Standout
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
2019 StandoutNobel
Growth of AlGaN/GaN/AlGaN double heterojunction field-effect transistors and the observation of a compositional pulling effect
2009 StandoutNobel
Ohmic contacts to Gallium Nitride materials
2016
247 nm solar-blind ultraviolet p-i-n photodetector
2006
AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low $R_{\scriptscriptstyle{\rm ON}} \times A$
2010
AlGaN/GaN Heterostructure Field-Effect Transistors on Fe-Doped GaN Substrates with High Breakdown Voltage
2011 StandoutNobel
A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode
2008
Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission
2012 StandoutNobel
384 nm laser diode grown on a (202¯1) semipolar relaxed AlGaN buffer layer
2012 StandoutNobel
Radiation Effects in GaN-Based High Electron Mobility Transistors
2015
AlGaN/GaN Heterostructure Field-Effect Transistors on Fe-Doped GaN Substrates with High Breakdown Voltage
2011 StandoutNobel
A Survey of Wide Bandgap Power Semiconductor Devices
2013 Standout
AlGaN-based laser diodes for the short-wavelength ultraviolet region
2009
Punchthrough-Voltage Enhancement of AlGaN/GaN HEMTs Using AlGaN Double-Heterojunction Confinement
2008
Vertically conducting deep-ultraviolet light-emitting diodes with interband tunneling junction grown on 6H-SiC substrate
2016
Works of B. Peres being referenced
Time-dependent degradation of AlGaN/GaN heterostructures grown on silicon carbide
2004
High-conductivity n-AlGaN with high Al mole fraction grown by metalorganic vapor phase deposition
2003
Fabrication and characterization of high breakdown voltage AlGaN∕GaN heterojunction field effect transistors on sapphire substrates
2006
Improved morphology for ohmic contacts to AlGaN/GaN high electron mobility transistors using WSix- or W-based metallization
2003
AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation
2003
Solar-blind AlGaN 256×256 p-i-n detectors and focal plane arrays
2006
High breakdown voltage C-doped GaN-on-sapphire HFETs with a low specific on-resistance
2007