Citation Impact

Citing Papers

Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography
2011
Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
2011 Standout
First-principles calculations for point defects in solids
2014 Standout
Carrier localization degree of In0.2Ga0.8N/GaN multiple quantum wells grown on vicinal sapphire substrates
2009
Growth study and impurity characterization of Al In1−N grown by metal organic chemical vapor deposition
2011 StandoutNobel
Growth of InN films and nanostructures by MOVPE
2009
Epitaxial growth of GaN by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) in the downflow of a very high frequency (VHF) N2/H2 excited plasma – effect of TMG flow rate and VHF power
2014 StandoutNobel
Low-temperature growth of InN by MOCVD and its characterization
2004
High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm
2011 StandoutNobel
Renewable energy resources: Current status, future prospects and their enabling technology
2014 Standout
10B/11B 1D/2D solid-state high-resolution NMR studies on boron-doped diamond
2009 StandoutNobel
Influence of growth temperature and V/III ratio on the optical characteristics of narrow band gap (0.77eV) InN grown on GaN/sapphire using pulsed MOVPE
2008
Selective area metal-organic vapor-phase epitaxy of InN, GaN and InGaN covering whole composition range
2009
Band-structure-corrected local density approximation study of semiconductor quantum dots and wires
2005
Discussion on electrical characteristics of i-In0.13Ga0.87N p-i-n photovoltaics by using a single/multi-antireflection layer
2010
InGaN Solar Cells: Present State of the Art and Important Challenges
2012
The effect of temperature and ammonia flux on the surface morphology and composition of InxAl1−xN epitaxial layers
2009
Optical polarization characteristics ofm-oriented InGaN/GaN light-emitting diodes with various indium compositions in single-quantum-well structure
2008 StandoutNobel
Polarization fields in wurtzite strained layers grown on () planes
2008
Trench-Shaped Defects on AlGaInN Quantum Wells Grown under Different Growth Pressures
2013 StandoutNobel
Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells
2013 StandoutNobel
Soft X-ray angle-resolved photoemission spectroscopy of heavily boron-doped superconducting diamond films
2006
Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells
2012 StandoutNobel
Characterization of boron-doped diamonds using 11B high-resolution NMR at high magnetic fields
2008 StandoutNobel
Effects of exciton localization on internal quantum efficiency of InGaN nanowires
2013 StandoutNobel
Effect of lateral vapor phase diffusion during the selective growth of InGaN/GaN MQW on semipolar and nonpolar GaN stripes
2011 StandoutNobel
Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission
2012 StandoutNobel
Alternative precursors for MOVPE growth of InN and GaN at low temperature
2009
Influence of Mg-doped barriers on semipolar (202¯1) multiple-quantum-well green light-emitting diodes
2011 StandoutNobel
When group-III nitrides go infrared: New properties and perspectives
2009
High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration
2014 StandoutNobel
X-ray diffraction of III-nitrides
2009
Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN
2008
Growth of GaInN by Raised-Pressure Metalorganic Vapor Phase Epitaxy
2010 StandoutNobel

Works of B. Maleyre being referenced

Indium nitride quantum dots grown by metalorganic vapor phase epitaxy
2003
Lattice parameters of relaxed wurtzite indium nitride powder obtained by MOCVD
2004
MOVPE growth of InN films and quantum dots
2004
Radiative and nonradiative recombination processes in InN films grown by metal organic chemical vapor deposition
2005
Raman scattering study of wurtzite and rocksalt InN under high pressure
2006
Growth of InN quantum dots by MOVPE
2005
Growth of InN layers by MOVPE using different substrates
2004
Rankless by CCL
2026