Standout Papers
- Dynamical study of the yellow luminescence band in GaN (1997)
- Properties of the yellow luminescence in undoped GaN epitaxial layers (1995)
- Magneto-optical investigation of the neutral donor bound exciton in GaN (1995)
- Shallow donors in GaN—The binding energy and the electron effective mass (1995)
- Selective Dynamical Study of Luminescences Near the Surface and the Interface of Epitaxial GaN (1995)
- Free exciton emission in GaN (1996)
- Exciton fine structure in undoped GaN epitaxial films (1996)
- Cooling dynamics of excitons in GaN (1999)
Citation Impact
Citing Papers
Effects of Si ion implantation and post-annealing on yellow luminescence from GaN
2002
Solar-to-hydrogen efficiency of more than 9% in photocatalytic water splitting
2023 StandoutNature
Optical signature of Mg-doped GaN: Transfer processes
2012
Luminescence and reflectivity studies of undoped, n- and p-doped GaN on (0001) sapphire
1997
Exciton and donor - acceptor recombination in undoped GaN on Si(111)
1997
Electrical control of spin coherence in semiconductor nanostructures
2001 Nature
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Sub-phonon-period compression of electron pulses for atomic diffraction
2015 StandoutNobel
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
2006 StandoutNobel
Spin Relaxation and Decoherence of Holes in Quantum Dots
2005
The interplay of structural and optical properties in individual ZnO nanostructures
2012
Room temperature high-fidelity holonomic single-qubit gate on a solid-state spin
2014 StandoutNobel
Quantum computers
2010 StandoutNature
Electrical Detection of Spin Accumulation in ap
2003 StandoutNobel
Diffraction Unlimited All-Optical Recording of Electron Spin Resonances
2011 StandoutNobel
Dependence of Resonance Energy Transfer on Exciton Dimensionality
2011 StandoutNobel
Room-Temperature Spin Injection from Fe into GaAs
2001
Optical Properties of ZnO Nanostructures
2006 Standout
Optical properties of Si‐, Ge‐ and Sn‐doped GaN
2002
Nanocrystal Quantum Dots: From Discovery to Modern Development
2021 StandoutNobel
Prospects of Colloidal Nanocrystals for Electronic and Optoelectronic Applications
2009 Standout
Growth and applications of Group III-nitrides
1998
Properties of low-pressure chemical vapor epitaxial GaN films grown using hydrazoic acid (HN3)
1997
Optical properties of gallium nitride bulk crystals grown by chloride vapor phase epitaxy
1999
Dielectric functions (1 to 5 eV) of wurtzite MgxZn1−xO (x⩽0.29) thin films
2003
InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
1998 StandoutNobel
Carrier localization of as-grownn-type gallium nitride under large hydrostatic pressure
1996
The influence of Si-doping to the growth rate and yellow luminescence of GaN grown by MOCVD
2001
Analysis of Time-Resolved Donor-Acceptor-Pair Recombination in MBE and MOVPE Grown GaN : Mg
2001
Photoluminescence of rapid-thermal annealed Mg-doped GaN films
2001
Surface superstructures and optical properties of wurtzite GaN grown on 6H-SiC
2001
Hole scattering and optical transitions in wide-band-gap nitrides: Wurtzite and zinc-blende structures
1997
Photoluminescence and cathodoluminescence of GaN doped with Pr
2000
Zeeman spectroscopy of shallow donors in GaN
1997
Temperature quenching of photoluminescence intensities in undoped and doped GaN
1999
Optical pumping in ferromagnet-semiconductor heterostructures: Magneto-optics and spin transport
2001
Photoluminescence of GaN grown by molecular-beam epitaxy on a freestanding GaN template
2001
Quantum ground state and single-phonon control of a mechanical resonator
2010 StandoutNatureNobel
High-excitation photoluminescence in GaN: Hot-carrier effects and the Mott transition
1999
Exciton binding energies and band gaps in GaN bulk crystals
1998
Processing quantum information in diamond
2006
Photoluminescence and photoluminescence excitation studies of as-grown and P-implanted GaN: On the nature of yellow luminescence
2002
Doping properties of C, Si, and Ge impurities in GaN and AlN
1997
Acceptors in undoped GaN studied by transient photoluminescence
2002
Graphene Cathode-Based ZnO Nanowire Hybrid Solar Cells
2012 StandoutNobel
Transient photoluminescence of shallow donor bound excitons in GaN
2010
Luminescence properties of defects in GaN
2005 Standout
Nanoalloys: From Theory to Applications of Alloy Clusters and Nanoparticles
2008 Standout
Luminescence studies of GaN grown on GaN and GaN/AlN buffer layers by metalorganic chemical vapor deposition
1996
The doping process and dopant characteristics of GaN
2002
Spintronics: Fundamentals and applications
2004 Standout
Determination of the Conduction Band Electron Effective Mass in Hexagonal GaN
1995 StandoutNobel
Substitutional carbon in group-III nitrides:Ab initiodescription of shallow and deep levels
2002
Electronic Doping and Redox-Potential Tuning in Colloidal Semiconductor Nanocrystals
2015
A comprehensive review of ZnO materials and devices
2005 Standout
Evidence of compensating centers as origin of yellow luminescence in GaN
1997
Photoluminescence studies of excitonic transitions in GaN epitaxial layers
1998
Dynamics of trapping on donors and relaxation of the B‐exciton in GaN
2002
Source of the yellow luminescence band in GaN grown by gas-source molecular beam epitaxy and the green luminescence band in single crystal ZnO
1998
Optically detected magnetic-resonance mapping on the yellow luminescence in GaN
2000
Optical properties of tensile-strained wurtzite GaN epitaxial layers
1997 StandoutNobel
Optical investigations of AlGaN on GaN epitaxial films
1999 StandoutNobel
Thermal treatment effect of the GaN buffer layer on the photoluminescence characteristics of the GaN epilayer
1999
Selective excitation and thermal quenching of the yellow luminescence of GaN
1999
Electrically Controlled Catalytic Nanowire Growth from Solution
2009 StandoutNobel
Magnesium acceptor levels in GaN studied by photoluminescence
1998
Characterization of Red Emission in Nominally Undoped Hydride Vapor Phase Epitaxy GaN
2001
A point defect complex related to the yellow luminescence in electron irradiated GaN
2001
Substitutional and interstitial carbon in wurtzite GaN
2002
Selective excitation of the yellow luminescence of GaN
1999
Unusual luminescence lines in GaN
2003
Exceptionally Stable, Hollow Tubular Metal−Organic Architectures: Synthesis, Characterization, and Solid-State Transformation Study
2004
Competition between band gap and yellow luminescence in GaN and its relevance for optoelectronic devices
1996
Dust Emission Features in NGC 7023 between 0.35 and 2.5 Microns: Extended Red Emission (0.7 Microns) and Two New Emission Features (1.15 and 1.5 Microns)
2000
Gas source molecular beam epitaxy of wurtzite GaN on sapphire substrates using GaN buffer layers
1997
Cathodoluminescence studies of the deep level emission bands of AlxGa1−xN films deposited on 6H–SiC(0001)
1998 StandoutNobel
III-V nitrides—important future electronic materials
1999
Photoluminescence of GaN: Effect of electron irradiation
1998 StandoutNobel
Zeeman splittings of excitonic transitions at the Γ point in wurtzite GaN: A magnetoreflectance investigation
1997
Free and bound excitons in thin wurtzite GaN layers on sapphire
1996 StandoutNobel
Dimensionality of excitons in laser-diode structures composed ofIn x Ga 1 − x N
1999 StandoutNobel
Metal Azolate Frameworks: From Crystal Engineering to Functional Materials
2011 Standout
Chemical origin of the yellow luminescence in GaN
2002
Electric-field strength, polarization dipole, and multi-interface band offset in piezoelectricGa 1 − x In x N / G a N
2000 StandoutNobel
Theoretical analysis of d electron effects on the electronic properties of wurtzite and zincblende GaN
2003
Spin-exchange splitting of excitons in GaN
2001
Yellow Band and Deep levels in Undoped MOVPE GaN.
1996
MBE growth and characterization of magnesium-doped gallium nitride
1998
Pressure and Time‐Resolved Photoluminescence Studies of Mg‐Doped and Undoped GaN
1996
Electrical spin injection from ferromagnetic MnAs metal layers into GaAs
2002
Defect-related luminescence of Mg-doped n-GaN grown by hydride vapour-phase epitaxy
1998
Cathodoluminescence study of GaN epitaxial layers
1996
Optical properties of wurtzite GaN epilayers grown onA
1998 StandoutNobel
Basic studies of gallium nitride growth on sapphire by metalorganic chemical vapor deposition and optical properties of deposited layers
1995
Optical properties of GaN epilayers on sapphire
1996
Photoluminescence spectroscopy on annealed molecular beam epitaxy grown GaN
2001
Determination of the Band Offset of GalnP- GaAs and AllnP- GaAs Quantum Wells by Optical Spectroscopy
1997
Optical characteristics of Mn+-ion-implanted GaN epilayers
2002
Piezoelectric Polarization in GaInN/GaN Heterostructures and Some Consequences for Device Design
2000 StandoutNobel
Determination of the spin-exchange interaction constant in wurtzite GaN
1998 StandoutNobel
Photoluminescence of MBE grown wurtzite Be-doped GaN
1998
Temperature-varied photoluminescence and magnetospectroscopy study of near-band-edge emissions in GaN
2001
The Photophysics of the Carrier of Extended Red Emission
2002
Free excitons with n=2 in bulk GaN
1997
Evolution of stress relaxation and yellow luminescence in GaN/sapphire by Si incorporation
1997
Optical characterization of wide bandgap semiconductors
2000 StandoutNobel
Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
1997
Band-gap narrowing and potential fluctuation in Si-doped GaN
1999
Properties of the main Mg-related acceptors in GaN from optical and structural studies
2014 StandoutNobel
Photoluminescence studies of GaN layers grown by hydride vapor phase epitaxy
2001
Internal structure and oscillator strengths of excitons in strained α-GaN
1997
Time-resolved cathodoluminescence assessment of deep-level transitions in hydride-vapor-phase-epitaxy GaN
2003
Gate-controlled electron spin resonance inG a A s / A l x Ga 1 − x As
2001
Piezoelectric Stark-like Ladder in GaN/GaInN/GaN Heterostructures
1999 StandoutNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Optical activation of Be implanted into GaN
1998 StandoutNobel
Electronic Structure of 1 to 2 nm Diameter Silicon Core/Shell Nanocrystals: Surface Chemistry, Optical Spectra, Charge Transfer, and Doping
2003 StandoutNobel
Carbon - an alternative acceptor for cubic GaN
2001
Hall-effect characterization of III–V nitride semiconductors for high efficiency light emitting diodes
1999
Origin of the Q=11 meV bound exciton in GaN
1997
Ultrafast core-loss spectroscopy in four-dimensional electron microscopy
2015 Nobel
Lattice and electronic structure properties of semiconducting alloy
1996
Size-dependent surface luminescence in ZnO nanowires
2004
Reduction of oscillator strength due to piezoelectric fields inG a N / A l x Ga 1 − x N
1998
Intrinsic exciton transitions in GaN
1998 StandoutNobel
Transient photoluminescence of defects in undoped GaN prepared by metal organic vapor phase epitaxy
1999
Semiconductor interfacial carrier dynamics via photoinduced electric fields
2015 Science
Excitation density dependence of photoluminescence in GaN:Mg
1998
Atomic origin of deep levels in p-type GaN: Theory
1997
Calculations of acceptor ionization energies in GaN
2001
Electron-Hole-Pair Creation Energies in Semiconductors
1975 Standout
Anti-Stokes photoluminescence of yellow band in GaN: evidence of two-photon excitation process
1999
Chemistry and Properties of Nanocrystals of Different Shapes
2005 Standout
Yellow Luminescence and Associated Odmr in Movpe Gan: A Comparison of Defect Models
1996
Defect Donor and Acceptor in GaN
1997
Al x Ga 1−x N/GaN band offsets determined by deep-level emission
2001
Silicon quantum dot superlattices: Modeling of energy bands, densities of states, and mobilities for silicon tandem solar cell applications
2006
Photoluminescence and Electron Paramagnetic Resonance of ZnO Tetrapod Structures
2004
Electronic Structure and Luminescence of 1.1- and 1.4-nm Silicon Nanocrystals: Oxide Shell versus Hydrogen Passivation
2003 StandoutNobel
Spintronics: A Spin-Based Electronics Vision for the Future
2001 StandoutScience
Contributions from gallium vacancies and carbon-related defects to the “yellow luminescence” in GaN
2003
Identification of an ionized-donor-bound-exciton transition in GaN
1997
Mobility enhancement and yellow luminescence in Si-doped GaN grown by metalorganic chemical vapor deposition technique
1997
Growth of GaN without Yellow Luminescence
1995
Strain-related phenomena in GaN thin films
1996 StandoutNobel
Photoluminescence study of the 1.047 eV emission in GaN
1996
Impact of nucleation conditions on the structural and optical properties of M-plane GaN(1100) grown on γ-LiAlO2
2002
Exciton-phonon interactions, exciton binding energy, and their importance in the realization of room-temperature semiconductor lasers based on GaN
1998
Cocatalysts for Selective Photoreduction of CO2into Solar Fuels
2019 Standout
Low-temperature luminescence of exciton and defect states in heteroepitaxial GaN grown by hydride vapor phase epitaxy
1999
Role of carbon in GaN
2002
Doping of group III nitrides
1998
Free and Bound Excitons in GaN Epitaxial Films
1996
OPTICALLY DETECTED MAGNETIC RESONANCE STUDIES OF COLLOIDAL SEMICONDUCTOR NANOCRYSTALS
2004
Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy
2000
Free excitons in wurtzite GaN
2001
Luminescence Intensity Reduction in Mg-Doped GaN Grown by Metalorganic Chemical Vapor Phase Epitaxy
2001
Pressure and temperature effects on optical transitions in cubic GaN
1999
Temperature dependence of the radiative lifetime in GaN
1998
Biaxial strain in AlxGa1−xN/GaN layers deposited on 6H-SiC
1998 StandoutNobel
Effective masses of electrons and heavy holes in GaAs, InAs, A1As and their ternary compounds
1995
Luminescence Properties of As, P, and Bi as Isoelectronic Traps in GaN
1997
Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part I. Binary compounds GaN, AlN, and InN
2000
Temperature behaviour of the yellow emission in GaN
1997
Electrically detected magnetic resonance of two-dimensional electron gases in Si/SiGe heterostructures
1999
Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition
2004
Magneto-optical studies of GaN and GaN/AlxGa1−xN: Donor Zeeman spectroscopy and two dimensional electron gas cyclotron resonance
1996 StandoutNobel
Trends in residual stress for GaN/AlN/6H–SiC heterostructures
1998 StandoutNobel
Photoluminescence of localized excitons in pulsed-laser-deposited GaN
1998
Calculation of shallow donor levels in GaN
2000
Reactive-ion-etched gallium nitride: Metastable defects and yellow luminescence
1999
Time-resolved photoluminescence studies of an ionized donor-bound exciton in GaN
1999
Recombination of free and bound excitons in GaN
2008
Predicted maximum mobility in bulk GaN
2001
Effects of defect scattering on the photoluminescence of exciton-polaritons in n-GaN
1998 StandoutNobel
Equilibrium state of hydrogen in gallium nitride: Theory and experiment
2000
Correlation of biaxial strains, bound exciton energies, and defect microstructures in gan films grown on AlN/6H-SiC(0001) substrates
1997 StandoutNobel
Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells
1999
Band parameters for nitrogen-containing semiconductors
2003 Standout
Acceptor binding energies in GaN and AlN
1998
First-principles calculations for defects and impurities: Applications to III-nitrides
2004 Standout
Electron effective mass in hexagonal GaN
1999
Optical characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition
2000
Dominant shallow acceptor enhanced by oxygen doping in GaN
2006 StandoutNobel
Radiative carrier lifetime, momentum matrix element, and hole effective mass in GaN
1997
Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements
1997
The Scaling of the Effective Band Gaps in Indium−Arsenide Quantum Dots and Wires
2008
On the origin of the 2.8 eV blue emission in p-type GaN:Mg : A time-resolved photoluminescence investigation
2001
Nano-Brass: Bimetallic Copper/Zinc Colloids by a Nonaqueous Organometallic Route Using [Cu(OCH(Me)CH2NMe2)2] and Et2Zn as Precursors
2003
Defect-related optical transitions in GaN
1996
Broad emission band in GaN epitaxial layers grown on 6H-SiC and sapphire
1997
Dissociation of H-related defect complexes in Mg-doped GaN
2004
Photoluminescence excitation spectroscopy of GaN thin layers as a function of temperature
1997
Ionized donor bound excitons in GaN
1997
Time-resolved study of yellow and blue luminescence in Si- and Mg-doped GaN
2000
Works of B. K. Meyer being referenced
Free exciton emission in GaN
1996 StandoutNobel
GaN On 6H-SiC – Structural And Optical Properties
1994
On p-type doping in GaN—acceptor binding energies
1995
Dynamical study of the yellow luminescence band in GaN
1997 StandoutNobel
Selective Dynamical Study of Luminescences Near the Surface and the Interface of Epitaxial GaN
1995 StandoutNobel
Conduction-band spin splitting of type-IGa x In 1 − x
1994
Shallow donors in epitaxial GaN
1997
GaN epitaxial layers grown on 6H-SiC by the sublimation sandwich technique
1994
Properties of the yellow luminescence in undoped GaN epitaxial layers
1995 StandoutNobel
Zeeman spectroscopy of the Fe3+ center in GaN
1995
Temperature dependence of optical transitions between electronic energy levels in semiconductors
1994
Electron effective masses in 4H SiC
1995
Anion and cation vacancies in CdTe
1995
Exciton fine structure in undoped GaN epitaxial films
1996 StandoutNobel
Electron effective mass in direct-band-gapGaAs 1 − x P x
1993
Identification of the cadmium vacancy in CdTe by electron paramagnetic resonance
1993
Magneto-optical investigation of the neutral donor bound exciton in GaN
1995 StandoutNobel
Dependence on quantum confinement of the in-plane effective mass inGa 0.47 In 0.53
1992
Defects in porous silicon investigated by optically detected and by electron paramagnetic resonance techniques
1993
Excitonic line broadening in bulk grown Cd1−xZnxTe
1992
Identification of the 1.19-eV luminescence in hexagonal GaN
1995
Slow emission of the 2.56 eV centre in synthetic diamond
1994
Time Resolved Photoluminescence Spectroscopy on GaN Epitaxial Layers
1995
Magnetic resonance studies on ZnO nanocrystals
2003
Anion and cation vacancies in CdTe
1995
Shallow donors in GaN—The binding energy and the electron effective mass
1995 StandoutNobel
Photoluminescence Excitation Studies of the Optical Transitions in GaN
1996 Nobel
Behind the weak excitonic emission of ZnO quantum dots: ZnO/Zn(OH)2 core-shell structure
2002
Zeeman splitting of the excitonic recombination inIn x Ga 1 − x
1994
Cyclotron resonance studies of GaInP and AlGaInP
1994
Structural and optical analysis of epitaxial GaN on sapphire
1997
Magnetic-circular-dichroism study of heavy- and light-hole g factorsinIn x Ga 1 − x
1997
Properties of Vapour Phase Grown Mercuric Iodide Single Crystal Detectors
1975
Determination of the electron effective-mass tensor in 4HSiC
1996