Citation Impact
Citing Papers
Terahertz spectroscopy and imaging – Modern techniques and applications
2010 Standout
Low-threshold amplified spontaneous emission and lasing from colloidal nanocrystals of caesium lead halide perovskites
2015 Standout
Core/Shell Semiconductor Nanocrystals
2009 Standout
Structure investigation of low-temperature-grown GaAsSb, a material for photoconductive terahertz antennas
2005
Time-resolved exciton transfer in GaAs/Al x Ga 1 − x As double-quantum-well structures
1992
Long-range resonance transfer of electronic excitations in close-packed CdSe quantum-dot solids
1996 StandoutNobel
Strained layer heterostructures, and their applications to MODFETs, HBTs, and lasers
1993
Electronic Energy Transfer in CdSe Quantum Dot Solids
1996 StandoutNobel
Physics of thin-film ferroelectric oxides
2005 Standout
Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm
1997 StandoutNobel
Cathodoluminescence from intermixed quantum‐well structures: Evidence of remote luminescence
1993
Synthesis of Light-Emitting Conjugated Polymers for Applications in Electroluminescent Devices
2009 Standout
Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces
1993 Standout
Picosecond time-resolved spectroscopy of the excited state in a soluble derivative of poly(phenylene vinylene): Origin of the bimolecular decay
1998 StandoutNobel
Spatially Resolved Visible Luminescence of Self-Assembled Semiconductor Quantum Dots
1995 Science
Interdiffusion in core-shell and quantum-dot-quantum-well nanocrystals
2002
Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
1994 Standout
Biexciton creation and recombination in a GaAs quantum well
1992
Stress relaxation and critical thickness for misfit dislocation formation in (101¯) and (3031¯) InGaN/GaN heteroepitaxy
2012 StandoutNobel
Synthesis of Soluble and Processable Rod-, Arrow-, Teardrop-, and Tetrapod-Shaped CdSe Nanocrystals
2000 Standout
Spatially indirect excitons as primary photoexcitations in conjugated polymers
1994
Plastic relaxation and relaxed buffer layers for semiconductor epitaxy
1996
Blue and aquamarine stress-relaxed semipolar (112¯2) laser diodes
2013 StandoutNobel
High-speed photodetector applications of GaAs and InxGa1−xAs/GaAs grown by low-temperature molecular beam epitaxy
1993 StandoutNobel
Semiconducting Polymers: A New Class of Solid-State Laser Materials
1996 StandoutScienceNobel
Observation of the "Dark Exciton" in CdSe Quantum Dots
1995 StandoutNobel
Misfit dislocation formation via pre-existing threading dislocation glide in (112¯2) semipolar heteroepitaxy
2011 StandoutNobel
Ultrafast gain and excited-state absorption in luminescent polymers: pump-wavelength invariance
1998 StandoutNobel
Numerical analysis of the absorption and the refractive index change in arbitrary semiconductor quantum-well structures
1992 StandoutNobel
Electric-field strength, polarization dipole, and multi-interface band offset in piezoelectricGa 1 − x In x N / G a N quantum-well structures
2000 StandoutNobel
Low nonlinear gain in InGaAs/InGaAlAs separate confinement multiquantum well lasers
1991
Organic solid-state lasers
2000
444.9 nm semipolar (112¯2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer
2012 StandoutNobel
Limits to Quantum Efficiency in Electroluminescent Devices Based on Conjugated Polymers
1994
Spatially and temporally resolved emission from aggregates in conjugated polymers
1996 StandoutNobel
Atom probe analysis of interfacial abruptness and clustering within a single InxGa1−xN quantum well device on semipolar (101¯1¯) GaN substrate
2011 StandoutNobel
Organic Semiconductor Lasers
2007 Standout
Exciton Dynamics in Poly(p-Pyridyl Vinylene)
1996 StandoutNobel
High-Speed Dynamics in InP Based Multiple Quantum Well Lasers
1993
Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers
2012 StandoutNobel
Bifurcation in 20-GHz gain-switched 1.55-μm MQW lasers and its control by CW injection seeding
1998
Photophysics of poly(2, 3-diphenyl-5-hexyl-p-phenylene vinylene)
2000 StandoutNobel
Plastic lasers: Semiconducting polymers as a new class of solid-state laser materials
1997 StandoutNobel
Quantum-Confined Stark Effect in Single CdSe Nanocrystallite Quantum Dots
1997 StandoutScienceNobel
Determination of polarization field in a semipolar (112¯2) InGa∕GaN single quantum well using Franz–Keldysh oscillations in electroreflectance
2009 StandoutNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Piezoelectric Franz–Keldysh effect in strained GaInN/GaN heterostructures
1999 StandoutNobel
Control of differential gain, nonlinear gain and damping factor for high-speed application of GaAs-based MQW lasers
1993
Enhanced modulation bandwidth for strain-compensated InGaAlAs-InGaAsP MQW lasers
1998 StandoutNobel
Ultrafast long-wavelength photodetectors fabricated on low-temperature InGaAs on GaAs
1993
Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges
2009 StandoutNobel
Comparison of Polished and Dry Etched Semipolar $(11\bar{2}2)$ III-Nitride Laser Facets
2013 StandoutNobel
Damping of the relaxation resonance in multiple-quantum-well lasers by slow interwell transport
1993
Growth mode and strain relaxation during the initial stage of InxGa1−xAs growth on GaAs(001)
1992
Unambiguous evidence of the existence of polarization field crossover in a semipolar InGaN/GaN single quantum well
2009 StandoutNobel
Stimulated emission and lasing in solid films of conjugated polymers: ultrafast photophysics and photon confinement via scattering
1997 StandoutNobel
Transient carrier dynamics and photon-assisted transport in multiple-quantum-well lasers
1993
High-performance 1.5 mu m wavelength InGaAs-InGaAsP strained quantum well lasers and amplifiers
1991
Improved performance of $(20\bar{2}1)$ long-wavelength light-emitting diodes grown with wide quantum wells on stress-relaxed InxGa1−xN buffer layers
2014 StandoutNobel
Strain in cracked AlGaN layers
2002 StandoutNobel
Onset of plastic relaxation in semipolar (11 2 ¯ 2 ) In Ga1−N/GaN heterostructures
2013 StandoutNobel
Recombination dynamics of localized excitons in a CdSe/ZnSe/ZnS x Se 1 − x single-quantum-well structure
1996
Ultrafast studies of stimulated emission and gain in solid films of conjugated polymers
1997 StandoutNobel
Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission
2012 StandoutNobel
Modulation spectroscopy of semiconductors: bulk/thin film, microstructures, surfaces/interfaces and devices
1993
Novel design scheme for high-speed MQW lasers with enhanced differential gain and reduced carrier transport effect
1998 StandoutNobel
Microwave photonics combines two worlds
2007 Standout
Photoluminescence from highly excited AlN epitaxial layers
2008 StandoutNobel
Resonance frequency, damping, and differential gain in 1.5 mu m multiple quantum-well lasers
1992
Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
1990 Standout
Exchange splitting of the heavy hole exciton ground state in GaAs-GaAlAs quantum wells
1990
Barrier strain influence on the high-speed properties of compressively strained InGaAsP multiquantum-well laser structures
1997
Dependence of high-speed properties on the number of quantum wells in 1.55 mu m InGaAs-InGaAsP MQW lambda /4-shifted DFB lasers
1993
Photoluminescence Spectroscopy of Single CdSe Nanocrystallite Quantum Dots
1996 StandoutNobel
Works of B. Elman being referenced
GaAs/AlGaAs quantum-well intermixing using shallow ion implantation and rapid thermal annealing
1989
Excitonic spectra of asymmetric, coupled double quantum wells in electric fields
1989
Well-barrier hole burning in quantum well lasers
1991
Thermally stable, superlattice-enhanced 1.3- mu m InGaAs IMSM photodetectors on GaAs substrates
1991
Optical investigation of biexcitons and bound excitons in GaAs quantum wells
1988
I n s i t u measurements of critical layer thickness and optical studies of InGaAs quantum wells grown on GaAs substrates
1989
Low substrate temperature molecular beam epitaxial growth and the critical layer thickness of InGaAs grown on GaAs
1991
Spatially selective modification of GaAs/AlGaAs quantum wells by SiO2 capping and rapid thermal annealing
1989
Transformation of spatially direct to spatially indirect excitons in coupled double quantum wells
1988
Anomalously high damping in strained InGaAs-GaAs single quantum well lasers
1991
Electroreflectance study of a symmetrically coupled GaAs/Ga0.77Al0.23As double quantum well system
1991
High power 980 nm ridge waveguide lasers with etch-stop layer
1991